KR101553735B1 - 광 조사 장치 - Google Patents

광 조사 장치 Download PDF

Info

Publication number
KR101553735B1
KR101553735B1 KR1020120012764A KR20120012764A KR101553735B1 KR 101553735 B1 KR101553735 B1 KR 101553735B1 KR 1020120012764 A KR1020120012764 A KR 1020120012764A KR 20120012764 A KR20120012764 A KR 20120012764A KR 101553735 B1 KR101553735 B1 KR 101553735B1
Authority
KR
South Korea
Prior art keywords
lamp
gas
light
excimer lamp
lamp house
Prior art date
Application number
KR1020120012764A
Other languages
English (en)
Korean (ko)
Other versions
KR20120105356A (ko
Inventor
신이치 엔도
겐지 야마모리
하지메 이시하라
마사타카 가와구치
Original Assignee
우시오덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 우시오덴키 가부시키가이샤 filed Critical 우시오덴키 가부시키가이샤
Publication of KR20120105356A publication Critical patent/KR20120105356A/ko
Application granted granted Critical
Publication of KR101553735B1 publication Critical patent/KR101553735B1/ko

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning In General (AREA)
  • Liquid Crystal (AREA)
  • Vessels And Coating Films For Discharge Lamps (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020120012764A 2011-03-15 2012-02-08 광 조사 장치 KR101553735B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-056096 2011-03-15
JP2011056096A JP5729034B2 (ja) 2011-03-15 2011-03-15 光照射装置

Publications (2)

Publication Number Publication Date
KR20120105356A KR20120105356A (ko) 2012-09-25
KR101553735B1 true KR101553735B1 (ko) 2015-09-16

Family

ID=46804818

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120012764A KR101553735B1 (ko) 2011-03-15 2012-02-08 광 조사 장치

Country Status (4)

Country Link
JP (1) JP5729034B2 (zh)
KR (1) KR101553735B1 (zh)
CN (1) CN102671891B (zh)
TW (1) TWI575559B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5928527B2 (ja) * 2014-06-05 2016-06-01 ウシオ電機株式会社 エキシマ光照射装置
JP7003431B2 (ja) * 2017-04-06 2022-01-20 ウシオ電機株式会社 光照射装置
JP6984206B2 (ja) * 2017-07-19 2021-12-17 ウシオ電機株式会社 光照射装置
JP7115036B2 (ja) 2018-05-25 2022-08-09 ウシオ電機株式会社 エキシマランプ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004290935A (ja) * 2003-03-28 2004-10-21 Optrex Corp 基板処理装置
JP2007335350A (ja) 2006-06-19 2007-12-27 Ushio Inc 放電ランプ
JP2010055986A (ja) * 2008-08-29 2010-03-11 Ushio Inc エキシマランプ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3653980B2 (ja) * 1998-04-09 2005-06-02 ウシオ電機株式会社 紫外線照射装置
JP3704677B2 (ja) * 2000-06-28 2005-10-12 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2002219429A (ja) * 2001-01-23 2002-08-06 Hitachi Electronics Eng Co Ltd 基板処理装置及び処理方法
JP4126892B2 (ja) * 2001-09-14 2008-07-30 ウシオ電機株式会社 光照射装置
JP2003144913A (ja) * 2001-11-13 2003-05-20 Ushio Inc 誘電体バリア放電ランプによる処理装置、および処理方法
JP4407252B2 (ja) * 2003-11-20 2010-02-03 ウシオ電機株式会社 処理装置
JP2007088116A (ja) * 2005-09-21 2007-04-05 Harison Toshiba Lighting Corp 紫外光照射装置および光洗浄装置
JP5019156B2 (ja) * 2006-08-21 2012-09-05 ウシオ電機株式会社 エキシマランプ装置
JP5092808B2 (ja) * 2008-03-06 2012-12-05 ウシオ電機株式会社 紫外線照射ユニットおよび紫外線照射処理装置
JP2010055956A (ja) * 2008-08-28 2010-03-11 Tokai Rika Co Ltd コネクタ接続治具

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004290935A (ja) * 2003-03-28 2004-10-21 Optrex Corp 基板処理装置
JP2007335350A (ja) 2006-06-19 2007-12-27 Ushio Inc 放電ランプ
JP2010055986A (ja) * 2008-08-29 2010-03-11 Ushio Inc エキシマランプ

Also Published As

Publication number Publication date
JP5729034B2 (ja) 2015-06-03
CN102671891A (zh) 2012-09-19
TW201237927A (en) 2012-09-16
KR20120105356A (ko) 2012-09-25
JP2012195058A (ja) 2012-10-11
TWI575559B (zh) 2017-03-21
CN102671891B (zh) 2016-01-20

Similar Documents

Publication Publication Date Title
TWI390552B (zh) Excimer lamp device
JP4337547B2 (ja) 紫外光洗浄装置および紫外光洗浄装置用紫外線ランプ
US6631726B1 (en) Apparatus and method for processing a substrate
KR101553735B1 (ko) 광 조사 장치
TWI532966B (zh) 具有多個紫外線-燈之紫外線光源及使用紫外光對產品進行技術處理的裝置
TWI466735B (zh) 紫外線照射裝置
KR20130058602A (ko) 광 조사 장치
TW200814185A (en) Excimer light irradiation apparatus
JP2008251913A (ja) 耐紫外線材料、ならびにこれを用いたシール部材、緩衝部材、遮光部材、光源装置、及び処理装置
JP4640421B2 (ja) 紫外線照射装置
JP2000260396A (ja) エキシマランプ、エキシマ照射装置および有機化合物の分解方法
JP2001300451A (ja) 紫外光照射装置
JP2013033948A (ja) 紫外線照射装置
JP2009183949A (ja) 紫外光洗浄装置および紫外光洗浄装置用紫外線ランプ
JP4479466B2 (ja) エキシマ光照射装置
TW574722B (en) Optical irradiation device
JP6790779B2 (ja) 紫外線処理装置
JP2004119942A (ja) 紫外線照射装置
JP2004152842A (ja) 紫外光照射による処理方法および紫外光照射装置
JPH10156177A (ja) 紫外線照射装置
WO2015076030A1 (ja) アッシング装置および被処理物保持構造体
KR20120005576A (ko) 포토마스크 블랭크용 투명 기판의 자외선 세정장치 및 세정 방법
JP2007149938A (ja) 基板処理装置及び基板処理方法並びにディスプレイ装置
JP5093176B2 (ja) エキシマランプ装置
JP2001217216A (ja) 紫外線照射方法及び装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
X701 Decision to grant (after re-examination)
GRNT Written decision to grant