KR101553735B1 - 광 조사 장치 - Google Patents
광 조사 장치 Download PDFInfo
- Publication number
- KR101553735B1 KR101553735B1 KR1020120012764A KR20120012764A KR101553735B1 KR 101553735 B1 KR101553735 B1 KR 101553735B1 KR 1020120012764 A KR1020120012764 A KR 1020120012764A KR 20120012764 A KR20120012764 A KR 20120012764A KR 101553735 B1 KR101553735 B1 KR 101553735B1
- Authority
- KR
- South Korea
- Prior art keywords
- lamp
- gas
- light
- excimer lamp
- lamp house
- Prior art date
Links
- 230000007246 mechanism Effects 0.000 claims abstract description 14
- 238000007599 discharging Methods 0.000 claims abstract description 7
- 230000005855 radiation Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000000356 contaminant Substances 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 6
- 239000007795 chemical reaction product Substances 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 44
- 239000000758 substrate Substances 0.000 description 35
- 239000011521 glass Substances 0.000 description 31
- 238000004140 cleaning Methods 0.000 description 27
- 239000010408 film Substances 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005108 dry cleaning Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Cleaning In General (AREA)
- Liquid Crystal (AREA)
- Vessels And Coating Films For Discharge Lamps (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2011-056096 | 2011-03-15 | ||
JP2011056096A JP5729034B2 (ja) | 2011-03-15 | 2011-03-15 | 光照射装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20120105356A KR20120105356A (ko) | 2012-09-25 |
KR101553735B1 true KR101553735B1 (ko) | 2015-09-16 |
Family
ID=46804818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020120012764A KR101553735B1 (ko) | 2011-03-15 | 2012-02-08 | 광 조사 장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5729034B2 (zh) |
KR (1) | KR101553735B1 (zh) |
CN (1) | CN102671891B (zh) |
TW (1) | TWI575559B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5928527B2 (ja) * | 2014-06-05 | 2016-06-01 | ウシオ電機株式会社 | エキシマ光照射装置 |
JP7003431B2 (ja) * | 2017-04-06 | 2022-01-20 | ウシオ電機株式会社 | 光照射装置 |
JP6984206B2 (ja) * | 2017-07-19 | 2021-12-17 | ウシオ電機株式会社 | 光照射装置 |
JP7115036B2 (ja) | 2018-05-25 | 2022-08-09 | ウシオ電機株式会社 | エキシマランプ |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004290935A (ja) * | 2003-03-28 | 2004-10-21 | Optrex Corp | 基板処理装置 |
JP2007335350A (ja) | 2006-06-19 | 2007-12-27 | Ushio Inc | 放電ランプ |
JP2010055986A (ja) * | 2008-08-29 | 2010-03-11 | Ushio Inc | エキシマランプ |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3653980B2 (ja) * | 1998-04-09 | 2005-06-02 | ウシオ電機株式会社 | 紫外線照射装置 |
JP3704677B2 (ja) * | 2000-06-28 | 2005-10-12 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP2002219429A (ja) * | 2001-01-23 | 2002-08-06 | Hitachi Electronics Eng Co Ltd | 基板処理装置及び処理方法 |
JP4126892B2 (ja) * | 2001-09-14 | 2008-07-30 | ウシオ電機株式会社 | 光照射装置 |
JP2003144913A (ja) * | 2001-11-13 | 2003-05-20 | Ushio Inc | 誘電体バリア放電ランプによる処理装置、および処理方法 |
JP4407252B2 (ja) * | 2003-11-20 | 2010-02-03 | ウシオ電機株式会社 | 処理装置 |
JP2007088116A (ja) * | 2005-09-21 | 2007-04-05 | Harison Toshiba Lighting Corp | 紫外光照射装置および光洗浄装置 |
JP5019156B2 (ja) * | 2006-08-21 | 2012-09-05 | ウシオ電機株式会社 | エキシマランプ装置 |
JP5092808B2 (ja) * | 2008-03-06 | 2012-12-05 | ウシオ電機株式会社 | 紫外線照射ユニットおよび紫外線照射処理装置 |
JP2010055956A (ja) * | 2008-08-28 | 2010-03-11 | Tokai Rika Co Ltd | コネクタ接続治具 |
-
2011
- 2011-03-15 JP JP2011056096A patent/JP5729034B2/ja active Active
- 2011-12-28 TW TW100149232A patent/TWI575559B/zh active
-
2012
- 2012-02-08 KR KR1020120012764A patent/KR101553735B1/ko active IP Right Grant
- 2012-03-14 CN CN201210067052.1A patent/CN102671891B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004290935A (ja) * | 2003-03-28 | 2004-10-21 | Optrex Corp | 基板処理装置 |
JP2007335350A (ja) | 2006-06-19 | 2007-12-27 | Ushio Inc | 放電ランプ |
JP2010055986A (ja) * | 2008-08-29 | 2010-03-11 | Ushio Inc | エキシマランプ |
Also Published As
Publication number | Publication date |
---|---|
JP5729034B2 (ja) | 2015-06-03 |
CN102671891A (zh) | 2012-09-19 |
TW201237927A (en) | 2012-09-16 |
KR20120105356A (ko) | 2012-09-25 |
JP2012195058A (ja) | 2012-10-11 |
TWI575559B (zh) | 2017-03-21 |
CN102671891B (zh) | 2016-01-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
X701 | Decision to grant (after re-examination) | ||
GRNT | Written decision to grant |