KR101541701B1 - 레이저 조사 장치, 레이저 조사 방법 및 반도체 장치의 제작 방법 - Google Patents

레이저 조사 장치, 레이저 조사 방법 및 반도체 장치의 제작 방법 Download PDF

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KR101541701B1
KR101541701B1 KR1020080079696A KR20080079696A KR101541701B1 KR 101541701 B1 KR101541701 B1 KR 101541701B1 KR 1020080079696 A KR1020080079696 A KR 1020080079696A KR 20080079696 A KR20080079696 A KR 20080079696A KR 101541701 B1 KR101541701 B1 KR 101541701B1
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South Korea
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laser
laser light
phase shift
shift mask
delete delete
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Korean (ko)
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KR20090017989A (ko
Inventor
미야이리 히데카즈
모모 준페이
이사카 후미토
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
KR1020080079696A 2007-08-16 2008-08-14 레이저 조사 장치, 레이저 조사 방법 및 반도체 장치의 제작 방법 Expired - Fee Related KR101541701B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00212046 2007-08-16
JP2007212046 2007-08-16

Publications (2)

Publication Number Publication Date
KR20090017989A KR20090017989A (ko) 2009-02-19
KR101541701B1 true KR101541701B1 (ko) 2015-08-04

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Country Status (3)

Country Link
US (1) US20090046757A1 (enExample)
JP (1) JP5383113B2 (enExample)
KR (1) KR101541701B1 (enExample)

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TWI479660B (zh) * 2006-08-31 2015-04-01 Semiconductor Energy Lab 薄膜電晶體，其製造方法，及半導體裝置
FR2922325B1 (fr) * 2007-10-12 2010-06-11 Ecole Polytech Homogeneiseur a lame de phase
KR20100107253A (ko) * 2009-03-25 2010-10-05 삼성모바일디스플레이주식회사 기판 절단 장치 및 이를 이용한 기판 절단 방법
KR101041137B1 (ko) * 2009-03-25 2011-06-13 삼성모바일디스플레이주식회사 기판 절단 장치 및 이를 이용한 기판 절단 방법
ES2398787B1 (es) * 2010-12-16 2014-02-18 BSH Electrodomésticos España S.A. Procedimiento para fabricar una placa de campo de cocción para un campo de cocción
FR2974183B1 (fr) * 2011-04-13 2013-12-13 Proton World Int Nv Dispositif de perturbation du fonctionnement d'un circuit integre.
JPWO2012164626A1 (ja) * 2011-06-02 2014-07-31 パナソニック株式会社 薄膜半導体装置の製造方法、薄膜半導体アレイ基板の製造方法、結晶性シリコン薄膜の形成方法、及び結晶性シリコン薄膜の形成装置
CN103189990A (zh) * 2011-10-28 2013-07-03 松下电器产业株式会社 薄膜半导体器件及其制造方法
KR102388723B1 (ko) * 2015-08-07 2022-04-21 삼성디스플레이 주식회사 레이저 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법
DE102015216342B3 (de) * 2015-08-26 2016-12-22 Laser-Laboratorium Göttingen e.V. Technik zur Herstellung periodischer Strukturen
KR102467462B1 (ko) * 2017-12-05 2022-11-16 삼성디스플레이 주식회사 레이저 결정화 장치

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JP2006339630A (ja) * 2005-05-02 2006-12-14 Semiconductor Energy Lab Co Ltd レーザ照射装置、およびレーザ照射方法
JP2007157894A (ja) 2005-12-02 2007-06-21 Hitachi Displays Ltd 表示装置の製造方法

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JP2005116558A (ja) * 2003-10-02 2005-04-28 Advanced Lcd Technologies Development Center Co Ltd 半導体薄膜の結晶化方法並びに結晶化装置、及び、半導体装置並びに製造方法、及び表示装置
JP2006339630A (ja) * 2005-05-02 2006-12-14 Semiconductor Energy Lab Co Ltd レーザ照射装置、およびレーザ照射方法
JP2007157894A (ja) 2005-12-02 2007-06-21 Hitachi Displays Ltd 表示装置の製造方法

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US20090046757A1 (en) 2009-02-19
JP5383113B2 (ja) 2014-01-08
JP2009065138A (ja) 2009-03-26
KR20090017989A (ko) 2009-02-19

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