KR101525801B1 - 어레이 기판 및 그 제조 방법 - Google Patents

어레이 기판 및 그 제조 방법 Download PDF

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Publication number
KR101525801B1
KR101525801B1 KR1020080113252A KR20080113252A KR101525801B1 KR 101525801 B1 KR101525801 B1 KR 101525801B1 KR 1020080113252 A KR1020080113252 A KR 1020080113252A KR 20080113252 A KR20080113252 A KR 20080113252A KR 101525801 B1 KR101525801 B1 KR 101525801B1
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South Korea
Prior art keywords
color filter
light shielding
shielding member
thin film
film transistor
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KR1020080113252A
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English (en)
Korean (ko)
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KR20100054350A (ko
Inventor
양병덕
이은국
유세환
한경태
강수형
전경숙
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삼성디스플레이 주식회사
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Priority to KR1020080113252A priority Critical patent/KR101525801B1/ko
Priority to US12/415,002 priority patent/US8841668B2/en
Priority to JP2009105489A priority patent/JP5511216B2/ja
Publication of KR20100054350A publication Critical patent/KR20100054350A/ko
Priority to US14/456,675 priority patent/US9268170B2/en
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Publication of KR101525801B1 publication Critical patent/KR101525801B1/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Liquid Crystal (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020080113252A 2008-11-14 2008-11-14 어레이 기판 및 그 제조 방법 Active KR101525801B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020080113252A KR101525801B1 (ko) 2008-11-14 2008-11-14 어레이 기판 및 그 제조 방법
US12/415,002 US8841668B2 (en) 2008-11-14 2009-03-31 Array substrate and method of manufacturing the same
JP2009105489A JP5511216B2 (ja) 2008-11-14 2009-04-23 アレイ基板およびその製造方法
US14/456,675 US9268170B2 (en) 2008-11-14 2014-08-11 Array substrate and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080113252A KR101525801B1 (ko) 2008-11-14 2008-11-14 어레이 기판 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20100054350A KR20100054350A (ko) 2010-05-25
KR101525801B1 true KR101525801B1 (ko) 2015-06-08

Family

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KR1020080113252A Active KR101525801B1 (ko) 2008-11-14 2008-11-14 어레이 기판 및 그 제조 방법

Country Status (3)

Country Link
US (2) US8841668B2 (https=)
JP (1) JP5511216B2 (https=)
KR (1) KR101525801B1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101830274B1 (ko) * 2011-01-28 2018-02-21 삼성디스플레이 주식회사 액정 표시 장치
KR101792797B1 (ko) * 2011-04-04 2017-11-02 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR101853033B1 (ko) * 2011-07-11 2018-04-30 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN102629664B (zh) * 2012-01-04 2015-01-07 京东方科技集团股份有限公司 一种阵列基板及其制作方法和显示装置
KR101971594B1 (ko) 2012-02-16 2019-04-24 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN103645590B (zh) * 2013-12-12 2016-10-05 京东方科技集团股份有限公司 一种阵列基板及其制备方法、液晶显示装置
KR20160079975A (ko) * 2014-12-26 2016-07-07 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
CN105185787B (zh) * 2015-08-26 2018-08-14 深圳市华星光电技术有限公司 制作阵列基板的方法、阵列基板以及液晶显示面板
CN107579165B (zh) * 2017-08-30 2024-04-05 京东方科技集团股份有限公司 一种封装基板及其制作方法、显示面板及显示装置
JP7377806B2 (ja) 2018-04-04 2023-11-10 エスアールアイ インターナショナル 意味処理および動的シーンモデリングに基づく向上された画像形成のための方法
WO2023285936A1 (en) 2021-07-13 2023-01-19 Zinite Corporation Thin film semiconductor switching device
WO2026022653A1 (en) * 2024-07-23 2026-01-29 Zinite Corporation Stackable and self-aligned tft structures

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JP2004219827A (ja) * 2003-01-16 2004-08-05 Toshiba Matsushita Display Technology Co Ltd 液晶表示装置
US20070292998A1 (en) * 2006-06-20 2007-12-20 Au Optronics Corporation Thin film transistor array substrate and method for manufacturing the same
JP2008107812A (ja) * 2006-09-29 2008-05-08 Semiconductor Energy Lab Co Ltd 半導体装置

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US5948577A (en) * 1997-06-02 1999-09-07 Canon Kabushiki Kaisha Color filter substrate, liquid crystal display device using the same and method of manufacturing color filter substrate
JPH11212075A (ja) 1998-01-23 1999-08-06 Toshiba Electronic Engineering Corp 液晶表示装置の製造方法
JP2002258267A (ja) 2000-12-26 2002-09-11 Toray Ind Inc カラーフィルター及びこれを用いた液晶表示装置
WO2003044595A1 (en) * 2001-11-22 2003-05-30 Samsung Electronics Co., Ltd. Liquid crystal display and thin film transistor array panel
KR100772940B1 (ko) 2001-12-05 2007-11-02 엘지.필립스 엘시디 주식회사 액정표시장치용 컬러필터 기판과 그 제조방법
JP2004219529A (ja) 2003-01-10 2004-08-05 Toshiba Matsushita Display Technology Co Ltd 液晶表示装置及びその製造方法
KR100935670B1 (ko) * 2003-04-04 2010-01-07 삼성전자주식회사 액정표시장치, 박막 트랜지스터 표시판 및 그의 제조 방법
KR20040104799A (ko) 2003-06-04 2004-12-13 엘지.필립스 엘시디 주식회사 컬러필터 기판의 제조공정이 개선된 액정표시장치 및 그제조방법
KR20050049985A (ko) 2003-11-24 2005-05-27 엘지.필립스 엘시디 주식회사 배면노광에 의해 형성된 컬러필터 기판을 이용한액정표시소자 제조방법
KR101064189B1 (ko) * 2004-08-03 2011-09-14 삼성전자주식회사 컬러필터 기판, 표시패널 및 이의 제조방법
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KR101274022B1 (ko) * 2005-11-29 2013-06-12 삼성디스플레이 주식회사 표시기판, 이를 갖는 표시패널, 표시기판의 제조방법 및이를 이용한 표시패널의 제조방법
KR101230307B1 (ko) * 2006-02-17 2013-02-06 삼성디스플레이 주식회사 액정 표시 장치
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Publication number Priority date Publication date Assignee Title
JP2004219827A (ja) * 2003-01-16 2004-08-05 Toshiba Matsushita Display Technology Co Ltd 液晶表示装置
US20070292998A1 (en) * 2006-06-20 2007-12-20 Au Optronics Corporation Thin film transistor array substrate and method for manufacturing the same
JP2008107812A (ja) * 2006-09-29 2008-05-08 Semiconductor Energy Lab Co Ltd 半導体装置

Also Published As

Publication number Publication date
US9268170B2 (en) 2016-02-23
KR20100054350A (ko) 2010-05-25
US20140349426A1 (en) 2014-11-27
US8841668B2 (en) 2014-09-23
US20100123137A1 (en) 2010-05-20
JP2010117698A (ja) 2010-05-27
JP5511216B2 (ja) 2014-06-04

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