KR101506465B1 - 액정 표시장치 및 상기 액정 표시장치를 구비하는 전자기기 - Google Patents

액정 표시장치 및 상기 액정 표시장치를 구비하는 전자기기 Download PDF

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Publication number
KR101506465B1
KR101506465B1 KR1020080072170A KR20080072170A KR101506465B1 KR 101506465 B1 KR101506465 B1 KR 101506465B1 KR 1020080072170 A KR1020080072170 A KR 1020080072170A KR 20080072170 A KR20080072170 A KR 20080072170A KR 101506465 B1 KR101506465 B1 KR 101506465B1
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semiconductor
film
conductive
island
layer
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Korean (ko)
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KR20090012120A (ko
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아츠시 미야구치
사토히로 오카모토
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020080072170A 2007-07-26 2008-07-24 액정 표시장치 및 상기 액정 표시장치를 구비하는 전자기기 Expired - Fee Related KR101506465B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007194844 2007-07-26
JPJP-P-2007-00194844 2007-07-26

Publications (2)

Publication Number Publication Date
KR20090012120A KR20090012120A (ko) 2009-02-02
KR101506465B1 true KR101506465B1 (ko) 2015-03-27

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KR1020080072170A Expired - Fee Related KR101506465B1 (ko) 2007-07-26 2008-07-24 액정 표시장치 및 상기 액정 표시장치를 구비하는 전자기기

Country Status (5)

Country Link
US (2) US7633089B2 (https=)
JP (2) JP5443711B2 (https=)
KR (1) KR101506465B1 (https=)
CN (1) CN101354514B (https=)
TW (1) TWI437339B (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7633089B2 (en) * 2007-07-26 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device provided with the same
JP2009071289A (ja) * 2007-08-17 2009-04-02 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US8101444B2 (en) 2007-08-17 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20090090915A1 (en) 2007-10-05 2009-04-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor, and method for manufacturing the same
JP2009267399A (ja) * 2008-04-04 2009-11-12 Fujifilm Corp 半導体装置，半導体装置の製造方法，表示装置及び表示装置の製造方法
WO2010058581A1 (ja) * 2008-11-20 2010-05-27 シャープ株式会社 シフトレジスタ
BR112012000960A2 (pt) * 2009-07-15 2016-03-15 Sharp Kk circuito acionador da linha do sinal de digitalização e dispositivo de exibição tendo o mesmo
JP5399163B2 (ja) * 2009-08-07 2014-01-29 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー 表示装置
CN105185837B (zh) * 2009-10-08 2018-08-03 株式会社半导体能源研究所 半导体器件、显示装置和电子电器
CN102549638B (zh) 2009-10-09 2015-04-01 株式会社半导体能源研究所 发光显示器件以及包括该发光显示器件的电子设备
US9093539B2 (en) * 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN103278990B (zh) * 2013-05-28 2017-08-25 京东方科技集团股份有限公司 像素结构及液晶面板
KR102144432B1 (ko) * 2013-11-06 2020-08-13 엘지디스플레이 주식회사 플렉서블 표시 장치 및 커브드 표시 장치
TWI595296B (zh) * 2014-09-23 2017-08-11 元太科技工業股份有限公司 顯示器
CN104317089B (zh) * 2014-10-27 2017-02-01 合肥鑫晟光电科技有限公司 一种阵列基板及其制备方法、显示面板、显示装置
KR102526110B1 (ko) 2016-04-12 2023-04-27 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
CN107728352B (zh) * 2017-11-22 2020-05-05 深圳市华星光电半导体显示技术有限公司 一种像素驱动电路及液晶显示面板
KR102746042B1 (ko) * 2018-01-05 2024-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 모듈, 및 전자 기기
CN110642829A (zh) * 2019-10-14 2020-01-03 中材江苏太阳能新材料有限公司 一种含噻吩环的光电材料及其制备方法
CN110727151A (zh) 2019-10-25 2020-01-24 京东方科技集团股份有限公司 阵列基板、显示面板、显示装置及驱动方法
JP7508336B2 (ja) * 2020-10-26 2024-07-01 株式会社ジャパンディスプレイ 半導体基板及び表示装置
GB2610946A (en) * 2021-02-26 2023-03-22 Boe Technology Group Co Ltd Thin film transistor, display panel and display device
WO2026075387A1 (ko) * 2024-10-04 2026-04-09 삼성전자 주식회사 도전성 연결 부재를 포함하는 전자 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187731A (ja) * 1997-09-03 1999-03-30 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091334A (en) 1980-03-03 1992-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS56122123A (en) 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
JPS62247569A (ja) * 1986-04-18 1987-10-28 Matsushita Electric Ind Co Ltd 半導体装置
JPH0451570A (ja) * 1990-06-20 1992-02-20 Casio Comput Co Ltd 薄膜トランジスタ
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP2791422B2 (ja) 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 電気光学装置およびその作製方法
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
JPH07326767A (ja) * 1994-05-31 1995-12-12 Sony Corp 薄膜トランジスタおよびそれを用いた液晶表示装置
JP2762968B2 (ja) * 1995-09-28 1998-06-11 日本電気株式会社 電界効果型薄膜トランジスタの製造方法
KR100257158B1 (ko) 1997-06-30 2000-05-15 김영환 박막 트랜지스터 및 그의 제조 방법
JP4236716B2 (ja) * 1997-09-29 2009-03-11 株式会社半導体エネルギー研究所 半導体装置
JP4215905B2 (ja) * 1999-02-15 2009-01-28 シャープ株式会社 液晶表示装置
JP2003015119A (ja) * 2001-04-23 2003-01-15 Toray Ind Inc カラーフィルタおよび液晶表示装置
JP3938680B2 (ja) * 2001-11-19 2007-06-27 シャープ株式会社 液晶表示装置用基板及びその製造方法及びそれを備えた液晶表示装置
JP2003287773A (ja) * 2002-01-23 2003-10-10 Seiko Epson Corp 反射型電気光学装置、および電子機器
KR100915231B1 (ko) * 2002-05-17 2009-09-02 삼성전자주식회사 저유전율 절연막의 증착방법, 이를 이용한 박막트랜지스터및 그 제조방법
TW577176B (en) * 2003-03-31 2004-02-21 Ind Tech Res Inst Structure of thin-film transistor, and the manufacturing method thereof
KR100938887B1 (ko) * 2003-06-30 2010-01-27 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 그 제조방법
TWI399580B (zh) * 2003-07-14 2013-06-21 半導體能源研究所股份有限公司 半導體裝置及顯示裝置
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
JP2005167051A (ja) 2003-12-04 2005-06-23 Sony Corp 薄膜トランジスタおよび薄膜トランジスタの製造方法
JP4578826B2 (ja) * 2004-02-26 2010-11-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4134106B2 (ja) * 2004-06-11 2008-08-13 シャープ株式会社 カラーフィルタ基板およびその製造方法ならびにそれを備えた表示装置
US7648861B2 (en) * 2004-08-03 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device including separately forming a second semiconductor film containing an impurity element over the first semiconductor region
JP2004356646A (ja) * 2004-08-06 2004-12-16 Casio Comput Co Ltd 薄膜トランジスタ
JP2007025005A (ja) * 2005-07-12 2007-02-01 Fujifilm Holdings Corp セル内構造の製造方法及びセル内構造並びに表示装置
EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
KR20090115222A (ko) * 2005-11-15 2009-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
US7633089B2 (en) * 2007-07-26 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device provided with the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187731A (ja) * 1997-09-03 1999-03-30 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

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JP2009049393A (ja) 2009-03-05
CN101354514B (zh) 2012-04-25
US20090026452A1 (en) 2009-01-29
KR20090012120A (ko) 2009-02-02
TW200916931A (en) 2009-04-16
US8044407B2 (en) 2011-10-25
JP5443711B2 (ja) 2014-03-19
TWI437339B (zh) 2014-05-11
US7633089B2 (en) 2009-12-15
CN101354514A (zh) 2009-01-28
US20100044713A1 (en) 2010-02-25
JP2014102509A (ja) 2014-06-05

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