KR101504530B1 - 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 - Google Patents

하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 Download PDF

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KR101504530B1
KR101504530B1 KR1020130028576A KR20130028576A KR101504530B1 KR 101504530 B1 KR101504530 B1 KR 101504530B1 KR 1020130028576 A KR1020130028576 A KR 1020130028576A KR 20130028576 A KR20130028576 A KR 20130028576A KR 101504530 B1 KR101504530 B1 KR 101504530B1
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South Korea
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proximity effect
area
effect correction
irradiation
coefficient
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Korean (ko)
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KR20130110034A (ko
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야스오 카토
준 야시마
아키히토 안포
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가부시키가이샤 뉴플레어 테크놀로지
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H01J37/3026—Patterning strategy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020130028576A 2012-03-27 2013-03-18 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 Active KR101504530B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-072473 2012-03-27
JP2012072473A JP5985852B2 (ja) 2012-03-27 2012-03-27 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Publications (2)

Publication Number Publication Date
KR20130110034A KR20130110034A (ko) 2013-10-08
KR101504530B1 true KR101504530B1 (ko) 2015-03-20

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KR1020130028576A Active KR101504530B1 (ko) 2012-03-27 2013-03-18 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법

Country Status (4)

Country Link
US (2) US8872141B2 (https=)
JP (1) JP5985852B2 (https=)
KR (1) KR101504530B1 (https=)
TW (1) TWI512409B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015185800A (ja) * 2014-03-26 2015-10-22 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、情報処理装置、パターン検査装置及び荷電粒子ビーム描画方法
KR102150972B1 (ko) 2014-06-05 2020-09-03 삼성전자주식회사 전자 빔 노광 시스템
JP2016082131A (ja) * 2014-10-20 2016-05-16 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、荷電粒子ビームを用いた描画方法、および荷電粒子ビーム描画でのショット補正方法
JP6438280B2 (ja) * 2014-11-28 2018-12-12 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6523767B2 (ja) * 2015-04-21 2019-06-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP7129676B1 (ja) * 2021-06-25 2022-09-02 日本コントロールシステム株式会社 電子ビーム描画装置、生産装置、電子ビーム描画方法、生産方法、プログラム

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JP3469422B2 (ja) 1996-02-23 2003-11-25 株式会社東芝 荷電ビーム描画方法及び描画装置
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Also Published As

Publication number Publication date
JP2013206996A (ja) 2013-10-07
US20130256519A1 (en) 2013-10-03
JP5985852B2 (ja) 2016-09-06
USRE47707E1 (en) 2019-11-05
KR20130110034A (ko) 2013-10-08
TW201351055A (zh) 2013-12-16
US8872141B2 (en) 2014-10-28
TWI512409B (zh) 2015-12-11

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