KR101501036B1 - 사파이어 단결정 및 그의 제조 방법 - Google Patents

사파이어 단결정 및 그의 제조 방법 Download PDF

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Publication number
KR101501036B1
KR101501036B1 KR1020130003851A KR20130003851A KR101501036B1 KR 101501036 B1 KR101501036 B1 KR 101501036B1 KR 1020130003851 A KR1020130003851 A KR 1020130003851A KR 20130003851 A KR20130003851 A KR 20130003851A KR 101501036 B1 KR101501036 B1 KR 101501036B1
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KR
South Korea
Prior art keywords
crystal
single crystal
sapphire
sapphire single
crucible
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KR1020130003851A
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English (en)
Korean (ko)
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KR20130111253A (ko
Inventor
와타루 스기무라
코지 마츠모토
토시유키 후지와라
Original Assignee
가부시키가이샤 사무코
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Publication of KR20130111253A publication Critical patent/KR20130111253A/ko
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Publication of KR101501036B1 publication Critical patent/KR101501036B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020130003851A 2012-03-30 2013-01-14 사파이어 단결정 및 그의 제조 방법 KR101501036B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012081574A JP5953884B2 (ja) 2012-03-30 2012-03-30 サファイア単結晶の製造方法
JPJP-P-2012-081574 2012-03-30

Publications (2)

Publication Number Publication Date
KR20130111253A KR20130111253A (ko) 2013-10-10
KR101501036B1 true KR101501036B1 (ko) 2015-03-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130003851A KR101501036B1 (ko) 2012-03-30 2013-01-14 사파이어 단결정 및 그의 제조 방법

Country Status (3)

Country Link
JP (1) JP5953884B2 (ja)
KR (1) KR101501036B1 (ja)
CN (1) CN103361727A (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5650869B1 (ja) * 2013-03-21 2015-01-07 株式会社アライドマテリアル サファイア単結晶育成用坩堝およびサファイア単結晶育成方法
KR101532265B1 (ko) 2013-12-03 2015-06-29 주식회사 엘지실트론 단결정 성장 장치
CN104651935B (zh) * 2014-10-17 2017-06-13 洛阳西格马炉业股份有限公司 一种坩埚上升法制备高品质蓝宝石晶体的方法
CN109112631B (zh) * 2018-10-29 2021-01-01 浙江昀丰新材料科技股份有限公司 一种蓝宝石c向长晶方法
CN111394786A (zh) * 2020-03-25 2020-07-10 哈尔滨奥瑞德光电技术有限公司 一种用于泡生法生长蓝宝石单晶的异形籽晶结构及其生长方法
CN115233299A (zh) * 2022-07-14 2022-10-25 露笑新能源技术有限公司 一种泡生法生长蓝宝石的引晶方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008031019A (ja) * 2006-07-31 2008-02-14 Shinkosha:Kk サファイア単結晶の製造方法
JP2008207993A (ja) * 2007-02-26 2008-09-11 Hitachi Chem Co Ltd サファイア単結晶の製造方法
JP2008266078A (ja) * 2007-04-23 2008-11-06 Shin Etsu Chem Co Ltd サファイア単結晶の製造方法
JP2009120453A (ja) * 2007-11-16 2009-06-04 Sumitomo Metal Mining Co Ltd 酸化アルミニウム単結晶の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09278592A (ja) * 1996-04-18 1997-10-28 Mitsubishi Heavy Ind Ltd チタンを含む酸化アルミニウム単結晶の製造方法
JP2006151745A (ja) * 2004-11-29 2006-06-15 Kyocera Corp 単結晶の製造方法及びそれらを用いた酸化物単結晶
JP4940610B2 (ja) * 2005-09-29 2012-05-30 住友金属鉱山株式会社 サファイア単結晶の育成方法
JP2008007353A (ja) * 2006-06-28 2008-01-17 Sumitomo Metal Mining Co Ltd サファイア単結晶育成装置およびそれを用いた育成方法
JP4905171B2 (ja) * 2007-02-14 2012-03-28 住友金属鉱山株式会社 酸化アルミニウム単結晶の製造方法及びこの方法を用いて得られる酸化アルミニウム単結晶
JP5004881B2 (ja) * 2008-06-27 2012-08-22 京セラ株式会社 単結晶育成装置用坩堝、単結晶育成方法、および単結晶育成装置
JP2010143781A (ja) * 2008-12-17 2010-07-01 Showa Denko Kk サファイア単結晶の製造方法
JP2010150056A (ja) * 2008-12-24 2010-07-08 Showa Denko Kk サファイア単結晶の製造方法
JP2010189242A (ja) * 2009-02-20 2010-09-02 Showa Denko Kk サファイア単結晶の製造方法およびサファイア単結晶引き上げ装置
JP2011032104A (ja) * 2009-07-29 2011-02-17 Showa Denko Kk サファイア単結晶およびサファイア単結晶の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008031019A (ja) * 2006-07-31 2008-02-14 Shinkosha:Kk サファイア単結晶の製造方法
JP2008207993A (ja) * 2007-02-26 2008-09-11 Hitachi Chem Co Ltd サファイア単結晶の製造方法
JP2008266078A (ja) * 2007-04-23 2008-11-06 Shin Etsu Chem Co Ltd サファイア単結晶の製造方法
JP2009120453A (ja) * 2007-11-16 2009-06-04 Sumitomo Metal Mining Co Ltd 酸化アルミニウム単結晶の製造方法

Also Published As

Publication number Publication date
JP5953884B2 (ja) 2016-07-20
JP2013209257A (ja) 2013-10-10
CN103361727A (zh) 2013-10-23
KR20130111253A (ko) 2013-10-10

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