KR101495230B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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KR101495230B1
KR101495230B1 KR20130093351A KR20130093351A KR101495230B1 KR 101495230 B1 KR101495230 B1 KR 101495230B1 KR 20130093351 A KR20130093351 A KR 20130093351A KR 20130093351 A KR20130093351 A KR 20130093351A KR 101495230 B1 KR101495230 B1 KR 101495230B1
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gas
gas supply
supply plate
flow path
hole
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Korean (ko)
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KR20140049456A (ko
Inventor
겐에츠 요코가와
마사히토 모리
다카오 아라세
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR20130093351A 2012-10-17 2013-08-06 플라즈마 처리 장치 Active KR101495230B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-229710 2012-10-17
JP2012229710A JP2014082354A (ja) 2012-10-17 2012-10-17 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20140049456A KR20140049456A (ko) 2014-04-25
KR101495230B1 true KR101495230B1 (ko) 2015-02-24

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KR20130093351A Active KR101495230B1 (ko) 2012-10-17 2013-08-06 플라즈마 처리 장치

Country Status (3)

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US (1) US10665448B2 (enExample)
JP (1) JP2014082354A (enExample)
KR (1) KR101495230B1 (enExample)

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* Cited by examiner, † Cited by third party
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US9100205B1 (en) * 2011-07-20 2015-08-04 Google Inc. System for validating site configuration based on real-time analytics data
JP6078419B2 (ja) * 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
JP6501493B2 (ja) * 2014-11-05 2019-04-17 東京エレクトロン株式会社 プラズマ処理装置
JP6681228B2 (ja) * 2016-03-14 2020-04-15 株式会社Ｓｃｒｅｅｎホールディングス エッチング装置及びエッチング方法
KR102119995B1 (ko) * 2016-05-27 2020-06-05 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 활성 가스 생성 장치
US10256003B2 (en) * 2017-01-31 2019-04-09 Plansee Japan Ltd. Blind-vented electrode
JP6772117B2 (ja) 2017-08-23 2020-10-21 株式会社日立ハイテク エッチング方法およびエッチング装置
JP2019109980A (ja) * 2017-12-15 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10984987B2 (en) * 2018-10-10 2021-04-20 Lam Research Corporation Showerhead faceplate having flow apertures configured for hollow cathode discharge suppression
WO2020217266A1 (ja) 2019-04-22 2020-10-29 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
WO2021255812A1 (ja) 2020-06-16 2021-12-23 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US12444618B2 (en) 2021-10-21 2025-10-14 Hitachi High-Tech Corporation Etching method and etching apparatus
JP7611127B2 (ja) * 2021-12-13 2025-01-09 東京エレクトロン株式会社 上部電極及びプラズマ処理装置
JP7498369B2 (ja) 2022-04-26 2024-06-11 株式会社日立ハイテク プラズマ処理方法
US20240006157A1 (en) * 2022-07-01 2024-01-04 Taiwan Semiconductor Manufacturing Company Methods and systems for dry etching

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KR100224461B1 (ko) * 1995-04-20 1999-10-15 히가시 데쓰로 샤워헤드 및 이를 이용한 성막장치
KR20090011978A (ko) * 2007-07-27 2009-02-02 주식회사 아이피에스 샤워헤드 및 그를 가지는 반도체처리장치
KR20100055370A (ko) * 1999-12-10 2010-05-26 도쿄엘렉트론가부시키가이샤 용사막이 형성된 부재 및 에칭 장치
KR101109069B1 (ko) * 2009-06-23 2012-01-31 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치

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US6173673B1 (en) * 1999-03-31 2001-01-16 Tokyo Electron Limited Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber
US6206972B1 (en) * 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
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US7371436B2 (en) * 2003-08-21 2008-05-13 Tokyo Electron Limited Method and apparatus for depositing materials with tunable optical properties and etching characteristics
JP2006287162A (ja) 2005-04-05 2006-10-19 Nisshinbo Ind Inc 複合型電極板、それの使用方法及びそれを装着したプラズマエッチング装置
JP4557814B2 (ja) 2005-06-09 2010-10-06 パナソニック株式会社 プラズマ処理装置
JP4819411B2 (ja) * 2005-06-22 2011-11-24 東京エレクトロン株式会社 プラズマ処理装置
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JP5520455B2 (ja) * 2008-06-11 2014-06-11 東京エレクトロン株式会社 プラズマ処理装置
JP5268626B2 (ja) * 2008-12-26 2013-08-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2010263049A (ja) * 2009-05-01 2010-11-18 Ulvac Japan Ltd ドライエッチング装置
JP5567392B2 (ja) * 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
JP5702964B2 (ja) * 2010-07-27 2015-04-15 日本発條株式会社 アース電極の接点及びその製造方法
JP5850236B2 (ja) * 2012-01-20 2016-02-03 アイシン精機株式会社 カーボンナノチューブの製造装置及びカーボンナノチューブの製造方法
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Publication number Priority date Publication date Assignee Title
KR100224461B1 (ko) * 1995-04-20 1999-10-15 히가시 데쓰로 샤워헤드 및 이를 이용한 성막장치
KR20100055370A (ko) * 1999-12-10 2010-05-26 도쿄엘렉트론가부시키가이샤 용사막이 형성된 부재 및 에칭 장치
KR20090011978A (ko) * 2007-07-27 2009-02-02 주식회사 아이피에스 샤워헤드 및 그를 가지는 반도체처리장치
KR101109069B1 (ko) * 2009-06-23 2012-01-31 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치

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KR20140049456A (ko) 2014-04-25
JP2014082354A (ja) 2014-05-08
US10665448B2 (en) 2020-05-26
US20140102640A1 (en) 2014-04-17

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