JP2014082354A - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP2014082354A
JP2014082354A JP2012229710A JP2012229710A JP2014082354A JP 2014082354 A JP2014082354 A JP 2014082354A JP 2012229710 A JP2012229710 A JP 2012229710A JP 2012229710 A JP2012229710 A JP 2012229710A JP 2014082354 A JP2014082354 A JP 2014082354A
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JP
Japan
Prior art keywords
gas
gas supply
processing apparatus
plasma processing
hole
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Pending
Application number
JP2012229710A
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English (en)
Japanese (ja)
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JP2014082354A5 (enExample
Inventor
Katanobu Yokogawa
賢悦 横川
Masashi Mori
政士 森
Takao Arase
高男 荒瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2012229710A priority Critical patent/JP2014082354A/ja
Priority to US13/953,924 priority patent/US10665448B2/en
Priority to KR20130093351A priority patent/KR101495230B1/ko
Publication of JP2014082354A publication Critical patent/JP2014082354A/ja
Publication of JP2014082354A5 publication Critical patent/JP2014082354A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2012229710A 2012-10-17 2012-10-17 プラズマ処理装置 Pending JP2014082354A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012229710A JP2014082354A (ja) 2012-10-17 2012-10-17 プラズマ処理装置
US13/953,924 US10665448B2 (en) 2012-10-17 2013-07-30 Plasma processing apparatus
KR20130093351A KR101495230B1 (ko) 2012-10-17 2013-08-06 플라즈마 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012229710A JP2014082354A (ja) 2012-10-17 2012-10-17 プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017015281A Division JP6368808B2 (ja) 2017-01-31 2017-01-31 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2014082354A true JP2014082354A (ja) 2014-05-08
JP2014082354A5 JP2014082354A5 (enExample) 2015-09-17

Family

ID=50474310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012229710A Pending JP2014082354A (ja) 2012-10-17 2012-10-17 プラズマ処理装置

Country Status (3)

Country Link
US (1) US10665448B2 (enExample)
JP (1) JP2014082354A (enExample)
KR (1) KR101495230B1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016091821A (ja) * 2014-11-05 2016-05-23 東京エレクトロン株式会社 プラズマ処理装置
JP2017168526A (ja) * 2016-03-14 2017-09-21 株式会社Ｓｃｒｅｅｎホールディングス エッチング装置及びエッチング方法
JP2018125271A (ja) * 2017-01-31 2018-08-09 プランゼージャパン株式会社 ブラインド通気性電極
CN109196959A (zh) * 2016-05-27 2019-01-11 东芝三菱电机产业系统株式会社 活性气体生成装置
JP2022512675A (ja) * 2018-10-10 2022-02-07 ラム リサーチ コーポレーション ホローカソード放電抑制用に構成されたフローアパーチャを有するシャワーヘッドフェースプレート
JP2023087245A (ja) * 2021-12-13 2023-06-23 東京エレクトロン株式会社 上部電極及びプラズマ処理装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9100205B1 (en) * 2011-07-20 2015-08-04 Google Inc. System for validating site configuration based on real-time analytics data
JP6078419B2 (ja) * 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
JP6772117B2 (ja) 2017-08-23 2020-10-21 株式会社日立ハイテク エッチング方法およびエッチング装置
JP2019109980A (ja) * 2017-12-15 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2020217266A1 (ja) 2019-04-22 2020-10-29 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
WO2021255812A1 (ja) 2020-06-16 2021-12-23 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US12444618B2 (en) 2021-10-21 2025-10-14 Hitachi High-Tech Corporation Etching method and etching apparatus
JP7498369B2 (ja) 2022-04-26 2024-06-11 株式会社日立ハイテク プラズマ処理方法
US20240006157A1 (en) * 2022-07-01 2024-01-04 Taiwan Semiconductor Manufacturing Company Methods and systems for dry etching

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JP2007005491A (ja) * 2005-06-22 2007-01-11 Tokyo Electron Ltd 電極アッセンブリ及びプラズマ処理装置
WO2007026889A1 (ja) * 2005-09-01 2007-03-08 Matsushita Electric Industrial Co., Ltd. プラズマ処理装置、プラズマ処理方法、これに用いられる誘電体窓及びその製造方法
JP2008108796A (ja) * 2006-10-23 2008-05-08 Hokuriku Seikei Kogyo Kk ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法
JP2010263049A (ja) * 2009-05-01 2010-11-18 Ulvac Japan Ltd ドライエッチング装置
JP2011009249A (ja) * 2009-06-23 2011-01-13 Hitachi High-Technologies Corp プラズマ処理装置
JP2012028273A (ja) * 2010-07-27 2012-02-09 Nhk Spring Co Ltd アース電極の接点及びその製造方法

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US5950925A (en) * 1996-10-11 1999-09-14 Ebara Corporation Reactant gas ejector head
US6110556A (en) * 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
US6173673B1 (en) * 1999-03-31 2001-01-16 Tokyo Electron Limited Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber
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KR20010062209A (ko) * 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
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JP5179389B2 (ja) * 2008-03-19 2013-04-10 東京エレクトロン株式会社 シャワーヘッド及び基板処理装置
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JP5268626B2 (ja) * 2008-12-26 2013-08-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5567392B2 (ja) * 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
JP5850236B2 (ja) * 2012-01-20 2016-02-03 アイシン精機株式会社 カーボンナノチューブの製造装置及びカーボンナノチューブの製造方法
US9982343B2 (en) * 2012-12-14 2018-05-29 Applied Materials, Inc. Apparatus for providing plasma to a process chamber

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JP2007005491A (ja) * 2005-06-22 2007-01-11 Tokyo Electron Ltd 電極アッセンブリ及びプラズマ処理装置
WO2007026889A1 (ja) * 2005-09-01 2007-03-08 Matsushita Electric Industrial Co., Ltd. プラズマ処理装置、プラズマ処理方法、これに用いられる誘電体窓及びその製造方法
JP2008108796A (ja) * 2006-10-23 2008-05-08 Hokuriku Seikei Kogyo Kk ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法
JP2010263049A (ja) * 2009-05-01 2010-11-18 Ulvac Japan Ltd ドライエッチング装置
JP2011009249A (ja) * 2009-06-23 2011-01-13 Hitachi High-Technologies Corp プラズマ処理装置
JP2012028273A (ja) * 2010-07-27 2012-02-09 Nhk Spring Co Ltd アース電極の接点及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016091821A (ja) * 2014-11-05 2016-05-23 東京エレクトロン株式会社 プラズマ処理装置
JP2017168526A (ja) * 2016-03-14 2017-09-21 株式会社Ｓｃｒｅｅｎホールディングス エッチング装置及びエッチング方法
CN109196959A (zh) * 2016-05-27 2019-01-11 东芝三菱电机产业系统株式会社 活性气体生成装置
JP2018125271A (ja) * 2017-01-31 2018-08-09 プランゼージャパン株式会社 ブラインド通気性電極
US10256003B2 (en) 2017-01-31 2019-04-09 Plansee Japan Ltd. Blind-vented electrode
JP2022512675A (ja) * 2018-10-10 2022-02-07 ラム リサーチ コーポレーション ホローカソード放電抑制用に構成されたフローアパーチャを有するシャワーヘッドフェースプレート
JP2023087245A (ja) * 2021-12-13 2023-06-23 東京エレクトロン株式会社 上部電極及びプラズマ処理装置

Also Published As

Publication number Publication date
KR20140049456A (ko) 2014-04-25
US10665448B2 (en) 2020-05-26
US20140102640A1 (en) 2014-04-17
KR101495230B1 (ko) 2015-02-24

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