KR101481974B1 - Ｓｏｉ 기판의 제조 방법 및 반도체 장치의 제조 방법 - Google Patents

Ｓｏｉ 기판의 제조 방법 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR101481974B1
KR101481974B1 KR20080064209A KR20080064209A KR101481974B1 KR 101481974 B1 KR101481974 B1 KR 101481974B1 KR 20080064209 A KR20080064209 A KR 20080064209A KR 20080064209 A KR20080064209 A KR 20080064209A KR 101481974 B1 KR101481974 B1 KR 101481974B1
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South Korea
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layer
semiconductor layer
light
substrate
semiconductor
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KR20090004704A (ko
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시모무라 아키히사
오누마 히데토
카케하타 테츠야
마키노 케니치로
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR20080064209A 2007-07-04 2008-07-03 Ｓｏｉ 기판의 제조 방법 및 반도체 장치의 제조 방법 Expired - Fee Related KR101481974B1 (ko)

Applications Claiming Priority (2)

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JPJP-P-2007-00175757 2007-07-04
JP2007175757 2007-07-04

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KR20090004704A KR20090004704A (ko) 2009-01-12
KR101481974B1 true KR101481974B1 (ko) 2015-01-14

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KR20080064209A Expired - Fee Related KR101481974B1 (ko) 2007-07-04 2008-07-03 Ｓｏｉ 기판의 제조 방법 및 반도체 장치의 제조 방법

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US (1) US7678668B2 (https=)
JP (1) JP2009033151A (https=)
KR (1) KR101481974B1 (https=)
CN (1) CN101339899B (https=)
TW (1) TWI438864B (https=)

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JP5420968B2 (ja) 2009-05-07 2014-02-19 信越化学工業株式会社 貼り合わせウェーハの製造方法
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KR101922849B1 (ko) 2009-11-20 2018-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101055473B1 (ko) * 2009-12-15 2011-08-08 삼성전기주식회사 기판 제조용 캐리어 부재 및 이를 이용한 기판의 제조방법
US8895457B2 (en) * 2010-03-08 2014-11-25 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device and substrate processing apparatus
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CN105931967B (zh) 2011-04-27 2019-05-03 株式会社半导体能源研究所 半导体装置的制造方法
JP6005401B2 (ja) * 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5878330B2 (ja) * 2011-10-18 2016-03-08 株式会社ディスコ レーザー光線の出力設定方法およびレーザー加工装置
KR20140091203A (ko) * 2013-01-10 2014-07-21 삼성전자주식회사 반도체의 잔류 응력 제거장치 및 잔류 응력 제거방법
KR101583007B1 (ko) * 2013-12-18 2016-01-07 주식회사 디에이케이코리아 합성수지의 금속 패턴 형성 방법
JP6294670B2 (ja) * 2014-01-07 2018-03-14 株式会社ジャパンディスプレイ 表示装置及び表示装置の製造方法
WO2016067159A1 (en) * 2014-10-28 2016-05-06 Semiconductor Energy Laboratory Co., Ltd. Functional panel, method for manufacturing the same, module, data processing device
JP6454606B2 (ja) * 2015-06-02 2019-01-16 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
JP6396852B2 (ja) * 2015-06-02 2018-09-26 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
JP6396854B2 (ja) * 2015-06-02 2018-09-26 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
CN105261586B (zh) * 2015-08-25 2018-05-25 上海新傲科技股份有限公司 带有电荷陷阱和绝缘埋层衬底的制备方法
CN107132616A (zh) * 2017-05-22 2017-09-05 浙江大学 一种基于复合波导的横向电场通过的偏振器
WO2019014753A1 (en) * 2017-07-20 2019-01-24 Quantum Silicon Inc. PROCESSING A SILICON WAFER ON INSULATION IN PREPARATION FOR MANUFACTURING AN ATOMISTIC ELECTRONIC DEVICE INTERFACED WITH A CMOS ELECTRONIC DEVICE
CN110166913A (zh) * 2018-02-14 2019-08-23 复旦大学附属眼耳鼻喉科医院 生物相容性传声器及其制备方法
KR102049806B1 (ko) * 2018-04-25 2020-01-22 한국과학기술연구원 특정 파장의 광원 및 반응성 가스를 이용하여 대상물의 표면을 평탄화하는 방법 및 장치
CN109001179B (zh) * 2018-08-07 2020-10-27 东南大学 尖端间距可调节的金属V型光栅Fano共振结构
US11426818B2 (en) 2018-08-10 2022-08-30 The Research Foundation for the State University Additive manufacturing processes and additively manufactured products
US12471367B2 (en) 2019-03-04 2025-11-11 Board Of Regents, The University Of Texas System Systems and techniques for forming silicon-on-oxide-on-silicon structures
US20220246809A1 (en) * 2019-05-23 2022-08-04 Vuereal Inc. Method of integrating functional tuning materials with micro devices and structures thereof
CN110854117A (zh) * 2019-11-26 2020-02-28 中国科学院微电子研究所 一种三维静态随机存取存储器及其制备方法
CN111181518A (zh) * 2019-12-28 2020-05-19 珠海市东恒电子有限公司 一种平衡非平衡射频转换元器件制程方法
CN113540339B (zh) * 2020-04-21 2024-07-12 济南晶正电子科技有限公司 一种制备压电复合薄膜的方法及压电复合薄膜
CN111508891B (zh) * 2020-04-28 2024-03-12 上海华力集成电路制造有限公司 Soi晶圆片的制作方法
CN113745391B (zh) * 2021-08-26 2022-10-14 厦门天马微电子有限公司 一种显示面板和显示装置
CN117066978B (zh) * 2023-10-16 2024-01-05 天通控股股份有限公司 一种钽酸锂键合晶片的减薄方法
KR20250083279A (ko) 2023-11-30 2025-06-10 삼성디스플레이 주식회사 표시 장치의 제조 장치

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Publication number Publication date
TW200908214A (en) 2009-02-16
JP2009033151A (ja) 2009-02-12
US20090011575A1 (en) 2009-01-08
CN101339899B (zh) 2012-02-08
CN101339899A (zh) 2009-01-07
KR20090004704A (ko) 2009-01-12
TWI438864B (zh) 2014-05-21
US7678668B2 (en) 2010-03-16

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