KR101481737B1 - 발광장치 - Google Patents
발광장치 Download PDFInfo
- Publication number
- KR101481737B1 KR101481737B1 KR20080045008A KR20080045008A KR101481737B1 KR 101481737 B1 KR101481737 B1 KR 101481737B1 KR 20080045008 A KR20080045008 A KR 20080045008A KR 20080045008 A KR20080045008 A KR 20080045008A KR 101481737 B1 KR101481737 B1 KR 101481737B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- light emitting
- substrate
- transistor
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
- H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007132803 | 2007-05-18 | ||
| JPJP-P-2007-00132803 | 2007-05-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20080101732A KR20080101732A (ko) | 2008-11-21 |
| KR101481737B1 true KR101481737B1 (ko) | 2015-01-12 |
Family
ID=40287880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR20080045008A Expired - Fee Related KR101481737B1 (ko) | 2007-05-18 | 2008-05-15 | 발광장치 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US8513678B2 (https=) |
| JP (3) | JP5154299B2 (https=) |
| KR (1) | KR101481737B1 (https=) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7877895B2 (en) | 2006-06-26 | 2011-02-01 | Tokyo Electron Limited | Substrate processing apparatus |
| US8232598B2 (en) * | 2007-09-20 | 2012-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| JP2009151293A (ja) * | 2007-11-30 | 2009-07-09 | Semiconductor Energy Lab Co Ltd | 表示装置及び表示装置の作製方法、並びに電子機器 |
| US8736587B2 (en) * | 2008-07-10 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| EP2178133B1 (en) * | 2008-10-16 | 2019-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device |
| US20100224880A1 (en) * | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101613865B1 (ko) * | 2009-03-26 | 2016-04-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 그 제작 방법 |
| JP5581106B2 (ja) * | 2009-04-27 | 2014-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR102005736B1 (ko) * | 2009-10-16 | 2019-07-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| JP5740132B2 (ja) | 2009-10-26 | 2015-06-24 | 株式会社半導体エネルギー研究所 | 表示装置及び半導体装置 |
| KR102220606B1 (ko) | 2009-11-06 | 2021-03-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US9142804B2 (en) * | 2010-02-09 | 2015-09-22 | Samsung Display Co., Ltd. | Organic light-emitting device including barrier layer and method of manufacturing the same |
| JP5969216B2 (ja) * | 2011-02-11 | 2016-08-17 | 株式会社半導体エネルギー研究所 | 発光素子、表示装置、照明装置、及びこれらの作製方法 |
| US8928010B2 (en) | 2011-02-25 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| CN105702873B (zh) * | 2011-03-30 | 2017-11-24 | 株式会社半导体能源研究所 | 发光元件 |
| KR101960759B1 (ko) * | 2011-04-08 | 2019-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치, 전자 기기, 및 조명 장치 |
| JP2013178500A (ja) * | 2012-02-02 | 2013-09-09 | Semiconductor Energy Lab Co Ltd | シリアルパラレル変換回路、表示装置、シリアルパラレル変換回路の駆動方法 |
| US8946731B2 (en) * | 2012-09-24 | 2015-02-03 | International Business Machines Corporation | OLED display with spalled semiconductor driving circuitry and other integrated functions |
| KR102034071B1 (ko) * | 2013-03-26 | 2019-10-18 | 엘지디스플레이 주식회사 | 폴리 실리콘 박막트랜지스터를 포함하는 유기발광 디스플레이 장치 및 이의 제조방법 |
| US9443872B2 (en) | 2014-03-07 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2021035405A1 (zh) | 2019-08-23 | 2021-03-04 | 京东方科技集团股份有限公司 | 显示装置及其制造方法和驱动基板 |
| CN105185816A (zh) * | 2015-10-15 | 2015-12-23 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
| US11600234B2 (en) | 2015-10-15 | 2023-03-07 | Ordos Yuansheng Optoelectronics Co., Ltd. | Display substrate and driving method thereof |
| WO2021035415A1 (zh) | 2019-08-23 | 2021-03-04 | 京东方科技集团股份有限公司 | 显示装置及其制备方法 |
| JP6917700B2 (ja) | 2015-12-02 | 2021-08-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US20180090720A1 (en) * | 2016-09-27 | 2018-03-29 | Universal Display Corporation | Flexible OLED Display Module |
| US10319880B2 (en) * | 2016-12-02 | 2019-06-11 | Innolux Corporation | Display device |
| KR102312349B1 (ko) * | 2017-06-30 | 2021-10-13 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 |
| CN109817672B (zh) * | 2019-01-29 | 2020-12-29 | 京东方科技集团股份有限公司 | 有机电致发光显示基板及其制造方法、显示面板、装置 |
| US12266303B2 (en) | 2019-08-23 | 2025-04-01 | Boe Technology Group Co., Ltd. | Display device and manufacturing method thereof |
| EP4020596B1 (en) | 2019-08-23 | 2025-04-16 | BOE Technology Group Co., Ltd. | Display device and manufacturing method therefor |
| EP4020447B1 (en) | 2019-08-23 | 2024-03-27 | BOE Technology Group Co., Ltd. | Pixel circuit and driving method therefor, and display substrate and driving method therefor, and display device |
| CN112840461B (zh) | 2019-08-23 | 2025-02-25 | 京东方科技集团股份有限公司 | 显示面板及其制造方法、显示装置 |
| US12120914B2 (en) | 2019-08-23 | 2024-10-15 | Boe Technology Group Co., Ltd. | Display device and manufacturing method thereof |
| CN112771674B (zh) | 2019-08-27 | 2022-02-22 | 京东方科技集团股份有限公司 | 电子装置基板及其制作方法、电子装置 |
Citations (4)
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- 2008-05-15 KR KR20080045008A patent/KR101481737B1/ko not_active Expired - Fee Related
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2012
- 2012-12-05 JP JP2012265980A patent/JP5444445B2/ja not_active Expired - Fee Related
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2013
- 2013-08-19 US US13/969,911 patent/US9431574B2/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| US20140034982A1 (en) | 2014-02-06 |
| US9431574B2 (en) | 2016-08-30 |
| JP2013101353A (ja) | 2013-05-23 |
| JP2014123129A (ja) | 2014-07-03 |
| US20090114926A1 (en) | 2009-05-07 |
| US8513678B2 (en) | 2013-08-20 |
| JP5154299B2 (ja) | 2013-02-27 |
| KR20080101732A (ko) | 2008-11-21 |
| JP5444445B2 (ja) | 2014-03-19 |
| JP2009003435A (ja) | 2009-01-08 |
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