KR101481377B1 - 프로세스 키트 링으로의 ｒｆ 전력의 할당이 제어되는 플라즈마 반응기를 위한 워크피스 지지체 - Google Patents

프로세스 키트 링으로의 ｒｆ 전력의 할당이 제어되는 플라즈마 반응기를 위한 워크피스 지지체 Download PDF

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KR101481377B1
KR101481377B1 KR1020117004089A KR20117004089A KR101481377B1 KR 101481377 B1 KR101481377 B1 KR 101481377B1 KR 1020117004089 A KR1020117004089 A KR 1020117004089A KR 20117004089 A KR20117004089 A KR 20117004089A KR 101481377 B1 KR101481377 B1 KR 101481377B1
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South Korea
Prior art keywords
process kit
workpiece
electrode
puck
collar
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KR1020117004089A
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Korean (ko)
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KR20110041541A (ko
Inventor
케네쓰 에스. 콜린스
더글라스 에이. 주니어 부흐베르거
카르틱 라마스와미
샤히드 라우프
히로지 하나와
제니퍼 와이. 선
앤드류 엔구옌
토르스텐 비. 릴리
메이후아 셴
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020117004089A 2008-07-23 2009-07-13 프로세스 키트 링으로의 ｒｆ 전력의 할당이 제어되는 플라즈마 반응기를 위한 워크피스 지지체 Expired - Fee Related KR101481377B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/178,032 2008-07-23
US12/178,032 US20100018648A1 (en) 2008-07-23 2008-07-23 Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
PCT/US2009/050403 WO2010011521A2 (en) 2008-07-23 2009-07-13 Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring

Publications (2)

Publication Number Publication Date
KR20110041541A KR20110041541A (ko) 2011-04-21
KR101481377B1 true KR101481377B1 (ko) 2015-01-12

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KR1020117004089A Expired - Fee Related KR101481377B1 (ko) 2008-07-23 2009-07-13 프로세스 키트 링으로의 ｒｆ 전력의 할당이 제어되는 플라즈마 반응기를 위한 워크피스 지지체

Country Status (7)

Country Link
US (1) US20100018648A1 (https=)
JP (1) JP5898955B2 (https=)
KR (1) KR101481377B1 (https=)
CN (1) CN102106191B (https=)
SG (1) SG192540A1 (https=)
TW (1) TWI494028B (https=)
WO (1) WO2010011521A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190009715A (ko) * 2017-07-19 2019-01-29 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치

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