CN102106191B - 具有可控制分配rf功率至制程套组环的等离子体反应器的工件支撑件 - Google Patents

具有可控制分配rf功率至制程套组环的等离子体反应器的工件支撑件 Download PDF

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Publication number
CN102106191B
CN102106191B CN200980128986.8A CN200980128986A CN102106191B CN 102106191 B CN102106191 B CN 102106191B CN 200980128986 A CN200980128986 A CN 200980128986A CN 102106191 B CN102106191 B CN 102106191B
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China
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ring
cover group
voltage source
processing procedure
clamp voltage
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Expired - Fee Related
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CN200980128986.8A
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English (en)
Chinese (zh)
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CN102106191A (zh
Inventor
肯尼思·S·柯林斯
道格拉斯·A·小布什伯格
卡尔蒂克·拉马斯瓦米
沙希德·劳夫
塙广二
詹尼弗·Y·孙
安德鲁·源
托尔斯特恩·B·莱尔
梅华·沈
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CN200980128986.8A 2008-07-23 2009-07-13 具有可控制分配rf功率至制程套组环的等离子体反应器的工件支撑件 Expired - Fee Related CN102106191B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/178,032 2008-07-23
US12/178,032 US20100018648A1 (en) 2008-07-23 2008-07-23 Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
PCT/US2009/050403 WO2010011521A2 (en) 2008-07-23 2009-07-13 Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring

Publications (2)

Publication Number Publication Date
CN102106191A CN102106191A (zh) 2011-06-22
CN102106191B true CN102106191B (zh) 2014-01-22

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CN200980128986.8A Expired - Fee Related CN102106191B (zh) 2008-07-23 2009-07-13 具有可控制分配rf功率至制程套组环的等离子体反应器的工件支撑件

Country Status (7)

Country Link
US (1) US20100018648A1 (https=)
JP (1) JP5898955B2 (https=)
KR (1) KR101481377B1 (https=)
CN (1) CN102106191B (https=)
SG (1) SG192540A1 (https=)
TW (1) TWI494028B (https=)
WO (1) WO2010011521A2 (https=)

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* Cited by examiner, † Cited by third party
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US12205843B2 (en) 2018-12-07 2025-01-21 Applied Materials, Inc. Ground electrode formed in an electrostatic chuck for a plasma processing chamber

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