KR101447176B1 - 선택적으로 증착된 가역 저항-스위칭 소자를 사용하는 메모리 셀과 상기 메모리 셀을 형성하는 방법 - Google Patents

선택적으로 증착된 가역 저항-스위칭 소자를 사용하는 메모리 셀과 상기 메모리 셀을 형성하는 방법 Download PDF

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Publication number
KR101447176B1
KR101447176B1 KR1020097027303A KR20097027303A KR101447176B1 KR 101447176 B1 KR101447176 B1 KR 101447176B1 KR 1020097027303 A KR1020097027303 A KR 1020097027303A KR 20097027303 A KR20097027303 A KR 20097027303A KR 101447176 B1 KR101447176 B1 KR 101447176B1
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forming
delete delete
memory cell
switching element
diode
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KR20100038317A (ko
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에이프럴 슈릭커
에스. 브래드 허너
마이클 코네베키
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쌘디스크 3디 엘엘씨
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Priority claimed from US11/772,084 external-priority patent/US8233308B2/en
Priority claimed from US11/772,090 external-priority patent/US7846785B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

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  • Semiconductor Memories (AREA)
KR1020097027303A 2007-06-29 2008-06-27 선택적으로 증착된 가역 저항-스위칭 소자를 사용하는 메모리 셀과 상기 메모리 셀을 형성하는 방법 Expired - Fee Related KR101447176B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/772,090 2007-06-29
US11/772,084 US8233308B2 (en) 2007-06-29 2007-06-29 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US11/772,090 US7846785B2 (en) 2007-06-29 2007-06-29 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US11/772,084 2007-06-29
PCT/US2008/007986 WO2009005700A2 (en) 2007-06-29 2008-06-27 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same

Related Child Applications (2)

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KR1020147008191A Division KR20140061468A (ko) 2007-06-29 2008-06-27 선택적으로 증착된 가역 저항-스위칭 소자를 사용하는 메모리 셀과 상기 메모리 셀을 형성하는 방법
KR1020147008185A Division KR101494335B1 (ko) 2007-06-29 2008-06-27 선택적으로 증착된 가역 저항-스위칭 소자를 사용하는 메모리 셀과 상기 메모리 셀을 형성하는 방법

Publications (2)

Publication Number Publication Date
KR20100038317A KR20100038317A (ko) 2010-04-14
KR101447176B1 true KR101447176B1 (ko) 2014-10-08

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Application Number Title Priority Date Filing Date
KR1020097027303A Expired - Fee Related KR101447176B1 (ko) 2007-06-29 2008-06-27 선택적으로 증착된 가역 저항-스위칭 소자를 사용하는 메모리 셀과 상기 메모리 셀을 형성하는 방법
KR1020147008191A Ceased KR20140061468A (ko) 2007-06-29 2008-06-27 선택적으로 증착된 가역 저항-스위칭 소자를 사용하는 메모리 셀과 상기 메모리 셀을 형성하는 방법
KR1020147008185A Expired - Fee Related KR101494335B1 (ko) 2007-06-29 2008-06-27 선택적으로 증착된 가역 저항-스위칭 소자를 사용하는 메모리 셀과 상기 메모리 셀을 형성하는 방법

Family Applications After (2)

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KR1020147008191A Ceased KR20140061468A (ko) 2007-06-29 2008-06-27 선택적으로 증착된 가역 저항-스위칭 소자를 사용하는 메모리 셀과 상기 메모리 셀을 형성하는 방법
KR1020147008185A Expired - Fee Related KR101494335B1 (ko) 2007-06-29 2008-06-27 선택적으로 증착된 가역 저항-스위칭 소자를 사용하는 메모리 셀과 상기 메모리 셀을 형성하는 방법

Country Status (6)

Country Link
EP (2) EP2485258B1 (enExample)
JP (1) JP5624463B2 (enExample)
KR (3) KR101447176B1 (enExample)
CN (1) CN101720506B (enExample)
TW (1) TWI433276B (enExample)
WO (1) WO2009005700A2 (enExample)

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JP4829320B2 (ja) * 2009-03-17 2011-12-07 株式会社東芝 不揮発性半導体記憶装置の製造方法
JP2010225741A (ja) 2009-03-23 2010-10-07 Toshiba Corp 不揮発性半導体記憶装置
JP4875118B2 (ja) * 2009-03-24 2012-02-15 株式会社東芝 不揮発性記憶装置の製造方法
US7927977B2 (en) * 2009-07-15 2011-04-19 Sandisk 3D Llc Method of making damascene diodes using sacrificial material
JP5161911B2 (ja) * 2010-03-25 2013-03-13 株式会社東芝 抵抗変化メモリ
CN102314940B (zh) * 2010-07-07 2014-04-23 旺宏电子股份有限公司 具有晶体管与电阻值切换装置并联的非挥发性存储器装置
JP5279879B2 (ja) * 2011-08-09 2013-09-04 株式会社東芝 不揮発性半導体記憶装置
JP5611903B2 (ja) * 2011-08-09 2014-10-22 株式会社東芝 抵抗変化メモリ
JP2013069922A (ja) 2011-09-22 2013-04-18 Toshiba Corp 不揮発性半導体記憶装置の製造方法及び不揮発性半導体記憶装置
JP5818679B2 (ja) 2011-12-27 2015-11-18 株式会社東芝 半導体装置の製造方法
JP5606478B2 (ja) * 2012-03-22 2014-10-15 株式会社東芝 半導体記憶装置
US9905757B2 (en) 2013-11-12 2018-02-27 Hewlett Packard Enterprise Development Lp Nonlinear memristor devices with three-layer selectors
CN111106238B (zh) * 2019-11-19 2023-08-29 中山大学 一种基于金属掺杂的双向阈值选通器及其制备方法

Citations (3)

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KR20040104967A (ko) * 2003-06-03 2004-12-14 삼성전자주식회사 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법
KR100717286B1 (ko) 2006-04-21 2007-05-15 삼성전자주식회사 상변화 물질층의 형성 방법과, 그 방법을 이용한 상변화기억 소자의 형성 방법 및 상변화 기억 소자
KR20070062435A (ko) * 2005-12-12 2007-06-15 히다치 글로벌 스토리지 테크놀로지스 네덜란드 비.브이. 단극 저항 램 장치 및 수직 스택 구조

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KR20040104967A (ko) * 2003-06-03 2004-12-14 삼성전자주식회사 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법
KR20070062435A (ko) * 2005-12-12 2007-06-15 히다치 글로벌 스토리지 테크놀로지스 네덜란드 비.브이. 단극 저항 램 장치 및 수직 스택 구조
KR100717286B1 (ko) 2006-04-21 2007-05-15 삼성전자주식회사 상변화 물질층의 형성 방법과, 그 방법을 이용한 상변화기억 소자의 형성 방법 및 상변화 기억 소자

Also Published As

Publication number Publication date
EP2485258A2 (en) 2012-08-08
KR101494335B1 (ko) 2015-02-23
WO2009005700A2 (en) 2009-01-08
TWI433276B (zh) 2014-04-01
EP2162916B1 (en) 2013-03-20
KR20100038317A (ko) 2010-04-14
CN101720506A (zh) 2010-06-02
CN101720506B (zh) 2012-05-16
EP2485258A3 (en) 2012-08-22
KR20140061467A (ko) 2014-05-21
JP2010532569A (ja) 2010-10-07
JP5624463B2 (ja) 2014-11-12
EP2162916A2 (en) 2010-03-17
TW200913171A (en) 2009-03-16
WO2009005700A3 (en) 2009-02-26
EP2485258B1 (en) 2014-03-26
KR20140061468A (ko) 2014-05-21

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