KR101434867B1 - 잠재적 활성화된 층을 갖는 유기 발광 디바이스 - Google Patents

잠재적 활성화된 층을 갖는 유기 발광 디바이스 Download PDF

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Publication number
KR101434867B1
KR101434867B1 KR1020097006238A KR20097006238A KR101434867B1 KR 101434867 B1 KR101434867 B1 KR 101434867B1 KR 1020097006238 A KR1020097006238 A KR 1020097006238A KR 20097006238 A KR20097006238 A KR 20097006238A KR 101434867 B1 KR101434867 B1 KR 101434867B1
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South Korea
Prior art keywords
layer
light emitting
metal
barium
cathode
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KR1020097006238A
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English (en)
Korean (ko)
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KR20090071573A (ko
Inventor
래리 네일 루이스
킹란 후앙
도날드 프랭클린 파우스트
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제너럴 일렉트릭 캄파니
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/145—Radiation by charged particles, e.g. electron beams or ion irradiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
KR1020097006238A 2006-09-28 2007-07-05 잠재적 활성화된 층을 갖는 유기 발광 디바이스 Expired - Fee Related KR101434867B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/536,228 US20070075628A1 (en) 2005-10-04 2006-09-28 Organic light emitting devices having latent activated layers
US11/536,228 2006-09-28
PCT/US2007/072847 WO2008094294A2 (en) 2006-09-28 2007-07-05 Organic light emitting devices having latent activated layers

Publications (2)

Publication Number Publication Date
KR20090071573A KR20090071573A (ko) 2009-07-01
KR101434867B1 true KR101434867B1 (ko) 2014-09-02

Family

ID=39683706

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097006238A Expired - Fee Related KR101434867B1 (ko) 2006-09-28 2007-07-05 잠재적 활성화된 층을 갖는 유기 발광 디바이스

Country Status (7)

Country Link
US (1) US20070075628A1 (https=)
EP (1) EP2067192A2 (https=)
JP (1) JP5663165B2 (https=)
KR (1) KR101434867B1 (https=)
CN (1) CN101517772B (https=)
TW (1) TWI457042B (https=)
WO (1) WO2008094294A2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040031167A1 (en) * 2002-06-13 2004-02-19 Stein Nathan D. Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife
US8709705B2 (en) 2004-12-13 2014-04-29 Pryog, Llc Metal-containing compositions and method of making same
US7534635B1 (en) 2008-03-24 2009-05-19 General Electric Company Getter precursors for hermetically sealed packaging
US8350144B2 (en) 2008-05-23 2013-01-08 Swaminathan Ramesh Hybrid photovoltaic cell module
KR101420327B1 (ko) * 2008-07-24 2014-08-14 삼성디스플레이 주식회사 유기 발광 소자의 제조 방법 및 유기 발광 소자
EP2326744B1 (en) * 2008-08-07 2022-06-01 Pryog, LLC Metal compositions and methods of making same
US20110008525A1 (en) * 2009-07-10 2011-01-13 General Electric Company Condensation and curing of materials within a coating system
TWI508618B (zh) * 2009-12-28 2015-11-11 Univ Nat Chiao Tung 製備有機發光二極體之方法及其裝置
JP6035706B2 (ja) * 2010-04-09 2016-11-30 三菱化学株式会社 有機電界素子用組成物の製造方法、有機電界素子用組成物、有機電界発光素子の製造方法、有機電界発光素子、有機ｅｌ表示装置および有機ｅｌ照明
US10941163B2 (en) 2015-09-29 2021-03-09 Pryog, Llc Metal compositions and methods of making same
JP7561139B2 (ja) 2019-03-25 2024-10-03 シノヴィア テクノロジーズ 非平衡熱硬化プロセス

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849869B1 (en) * 1999-07-19 2005-02-01 Dupont Displays, Inc. Long lifetime polymer light-emitting devices with improved luminous efficiency and improved radiance

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US5023A (en) * 1847-03-20 Stocking-loom
US6010A (en) * 1849-01-09 Improvement in the manufacture of hats
JPS5451776A (en) * 1977-10-03 1979-04-23 Nippon Hoso Kyokai <Nhk> Gas discharge display panel
JPS5787042A (en) * 1980-11-19 1982-05-31 Hitachi Ltd Manufacture of gas discharge panel
JPS58216353A (ja) * 1982-06-10 1983-12-16 Toshiba Corp 点灯管
JPH02272087A (ja) * 1989-04-13 1990-11-06 Ricoh Co Ltd 薄膜エレクトロルミネッセンス素子の製造方法
JPH0636688A (ja) * 1992-07-14 1994-02-10 Hitachi Ltd ガラス封止デバイス製造方法およびガス放電表示パネルの製造装置
US5534312A (en) * 1994-11-14 1996-07-09 Simon Fraser University Method for directly depositing metal containing patterned films
JPH1079297A (ja) * 1996-07-09 1998-03-24 Sony Corp 電界発光素子
US6452218B1 (en) * 1997-06-10 2002-09-17 Uniax Corporation Ultra-thin alkaline earth metals as stable electron-injecting electrodes for polymer light emitting diodes
GB9808806D0 (en) * 1998-04-24 1998-06-24 Cambridge Display Tech Ltd Selective deposition of polymer films
JP4622022B2 (ja) * 1999-02-09 2011-02-02 住友化学株式会社 高分子発光素子ならびにそれを用いた表示装置および面状光源
JP2001185019A (ja) * 1999-12-27 2001-07-06 Hitachi Powdered Metals Co Ltd 電界放出型カソード、電子放出装置、及び電子放出装置の製造方法
KR20030007904A (ko) * 2000-06-06 2003-01-23 이케이씨 테크놀로지, 인코포레이티드 전자 재료 제조 방법
US8932730B2 (en) * 2002-04-08 2015-01-13 The University of Northern California Doped organic carrier transport materials
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JP2005063834A (ja) * 2003-08-13 2005-03-10 Seiko Epson Corp 有機ｅｌ装置、有機ｅｌ装置の製造方法および電子機器
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Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US6849869B1 (en) * 1999-07-19 2005-02-01 Dupont Displays, Inc. Long lifetime polymer light-emitting devices with improved luminous efficiency and improved radiance

Also Published As

Publication number Publication date
TW200822798A (en) 2008-05-16
WO2008094294A2 (en) 2008-08-07
JP5663165B2 (ja) 2015-02-04
CN101517772A (zh) 2009-08-26
TWI457042B (zh) 2014-10-11
KR20090071573A (ko) 2009-07-01
US20070075628A1 (en) 2007-04-05
JP2010505236A (ja) 2010-02-18
CN101517772B (zh) 2012-07-18
EP2067192A2 (en) 2009-06-10
WO2008094294A3 (en) 2009-02-19

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