KR101430395B1 - 마스크 블랭크, 전사용 마스크 및 이들의 제조 방법 - Google Patents

마스크 블랭크, 전사용 마스크 및 이들의 제조 방법 Download PDF

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Publication number
KR101430395B1
KR101430395B1 KR1020147012378A KR20147012378A KR101430395B1 KR 101430395 B1 KR101430395 B1 KR 101430395B1 KR 1020147012378 A KR1020147012378 A KR 1020147012378A KR 20147012378 A KR20147012378 A KR 20147012378A KR 101430395 B1 KR101430395 B1 KR 101430395B1
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South Korea
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thin film
film
thickness
mask blank
mask
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KR1020147012378A
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Korean (ko)
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KR20140070660A (ko
Inventor
도시유끼 스즈끼
시게노리 이시하라
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
KR1020147012378A 2012-03-23 2013-02-08 마스크 블랭크, 전사용 마스크 및 이들의 제조 방법 Active KR101430395B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2012-066742 2012-03-23
JP2012066742 2012-03-23
PCT/JP2013/053053 WO2013140887A1 (ja) 2012-03-23 2013-02-08 マスクブランク、転写用マスクおよびこれらの製造方法

Related Child Applications (1)

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KR1020147012501A Division KR101588150B1 (ko) 2012-03-23 2013-02-08 마스크 블랭크, 전사용 마스크 및 이들의 제조 방법

Publications (2)

Publication Number Publication Date
KR20140070660A KR20140070660A (ko) 2014-06-10
KR101430395B1 true KR101430395B1 (ko) 2014-08-13

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KR1020147012501A Active KR101588150B1 (ko) 2012-03-23 2013-02-08 마스크 블랭크, 전사용 마스크 및 이들의 제조 방법
KR1020167001064A Active KR101922309B1 (ko) 2012-03-23 2013-02-08 마스크 블랭크, 전사용 마스크 및 이들의 제조 방법
KR1020147012378A Active KR101430395B1 (ko) 2012-03-23 2013-02-08 마스크 블랭크, 전사용 마스크 및 이들의 제조 방법

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KR1020147012501A Active KR101588150B1 (ko) 2012-03-23 2013-02-08 마스크 블랭크, 전사용 마스크 및 이들의 제조 방법
KR1020167001064A Active KR101922309B1 (ko) 2012-03-23 2013-02-08 마스크 블랭크, 전사용 마스크 및 이들의 제조 방법

Country Status (6)

Country Link
US (2) US9470970B2 (enExample)
JP (3) JP5286455B1 (enExample)
KR (3) KR101588150B1 (enExample)
SG (3) SG11201405526UA (enExample)
TW (2) TWI610125B (enExample)
WO (1) WO2013140887A1 (enExample)

Families Citing this family (20)

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JP6266322B2 (ja) * 2013-11-22 2018-01-24 Hoya株式会社 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク及びその製造方法、並びに表示装置の製造方法
JP6138676B2 (ja) * 2013-12-27 2017-05-31 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法
JP6292581B2 (ja) * 2014-03-30 2018-03-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
JP6313678B2 (ja) * 2014-07-14 2018-04-18 Hoya株式会社 マスクブランクの製造方法、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6104852B2 (ja) * 2014-07-14 2017-03-29 Hoya株式会社 マスクブランクの製造方法、位相シフトマスクの製造方法および半導体デバイスの製造方法
US10018905B2 (en) * 2015-04-06 2018-07-10 S & S Tech Co., Ltd Phase shift blankmask and photomask
KR101617727B1 (ko) 2015-07-24 2016-05-03 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토마스크
JP6621626B2 (ja) * 2015-09-18 2019-12-18 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6742184B2 (ja) * 2016-07-26 2020-08-19 アルバック成膜株式会社 位相シフタ膜の製造方法、位相シフトマスクブランクの製造方法、及び、位相シフトマスクの製造方法
JP6677139B2 (ja) * 2016-09-28 2020-04-08 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランクの製造方法
JP6772037B2 (ja) * 2016-11-11 2020-10-21 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
JP6532919B2 (ja) * 2017-09-07 2019-06-19 Hoya株式会社 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク、及び表示装置の製造方法
KR102688948B1 (ko) * 2017-09-21 2024-07-29 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조 방법
WO2019130802A1 (ja) * 2017-12-26 2019-07-04 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
CN110184655B (zh) * 2019-04-25 2022-01-11 上海新傲科技股份有限公司 晶圆的表面氧化方法
KR102444967B1 (ko) 2021-04-29 2022-09-16 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102465982B1 (ko) 2021-07-13 2022-11-09 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102503790B1 (ko) * 2021-10-07 2023-02-23 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
JP7346527B2 (ja) * 2021-11-25 2023-09-19 Hoya株式会社 マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、及び表示装置の製造方法
TWI796907B (zh) * 2021-12-28 2023-03-21 宏碁股份有限公司 光固化設備以及顯示裝置的製造方法

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KR20070077028A (ko) * 2006-01-20 2007-07-25 주식회사 에스앤에스텍 하프톤형 위상반전 블랭크 마스크용 스퍼터링 타겟, 이를이용한 하프톤형 위상반전 블랭크 마스크 및 포토마스크,그리고 그 제조방법
KR20070096922A (ko) * 2006-03-24 2007-10-02 주식회사 에스앤에스텍 하프톤형 위상반전 블랭크 마스크 및 이를 이용한 포토마스크

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Also Published As

Publication number Publication date
TWI585515B (zh) 2017-06-01
SG10201509797RA (en) 2015-12-30
KR101588150B1 (ko) 2016-01-25
JP2014194547A (ja) 2014-10-09
US20150072273A1 (en) 2015-03-12
KR101922309B1 (ko) 2018-11-26
SG11201405526UA (en) 2014-11-27
US9470970B2 (en) 2016-10-18
TW201642021A (zh) 2016-12-01
JP2013225139A (ja) 2013-10-31
JP5530550B2 (ja) 2014-06-25
KR20140127203A (ko) 2014-11-03
SG10201605431QA (en) 2016-08-30
TWI610125B (zh) 2018-01-01
US20170010526A1 (en) 2017-01-12
WO2013140887A1 (ja) 2013-09-26
KR20140070660A (ko) 2014-06-10
JP5976715B2 (ja) 2016-08-24
JP2013225109A (ja) 2013-10-31
JP5286455B1 (ja) 2013-09-11
TW201346434A (zh) 2013-11-16
US9952498B2 (en) 2018-04-24
KR20160009711A (ko) 2016-01-26

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