KR101424305B1 - 복사 방출 장치 - Google Patents

복사 방출 장치 Download PDF

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Publication number
KR101424305B1
KR101424305B1 KR1020097008354A KR20097008354A KR101424305B1 KR 101424305 B1 KR101424305 B1 KR 101424305B1 KR 1020097008354 A KR1020097008354 A KR 1020097008354A KR 20097008354 A KR20097008354 A KR 20097008354A KR 101424305 B1 KR101424305 B1 KR 101424305B1
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KR
South Korea
Prior art keywords
contact portion
radiation
conductive paths
radiation emitting
electrode surface
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Expired - Fee Related
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KR1020097008354A
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English (en)
Korean (ko)
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KR20090057460A (ko
Inventor
마커스 클레인
플로리안 쉰들러
이안 스테픈 밀라드
속 ? 베
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20090057460A publication Critical patent/KR20090057460A/ko
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Assigned to 오스람 오엘이디 게엠베하 reassignment 오스람 오엘이디 게엠베하 권리의 전부이전등록 Assignors: 오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/254—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising a metal, e.g. transparent gold
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020097008354A 2006-09-29 2007-09-11 복사 방출 장치 Expired - Fee Related KR101424305B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006046234.3 2006-09-29
DE102006046234 2006-09-29
DE102006055884.7 2006-11-27
DE102006055884.7A DE102006055884B4 (de) 2006-09-29 2006-11-27 Strahlungsemittierende Vorrichtung und Verfahren zu ihrer Herstellung
PCT/DE2007/001637 WO2008040288A2 (de) 2006-09-29 2007-09-11 Strahlungsemittierende vorrichtung

Publications (2)

Publication Number Publication Date
KR20090057460A KR20090057460A (ko) 2009-06-05
KR101424305B1 true KR101424305B1 (ko) 2014-08-01

Family

ID=38962611

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097008354A Expired - Fee Related KR101424305B1 (ko) 2006-09-29 2007-09-11 복사 방출 장치

Country Status (8)

Country Link
US (2) US8159129B2 (https=)
EP (1) EP2067190A2 (https=)
JP (1) JP5424882B2 (https=)
KR (1) KR101424305B1 (https=)
CN (1) CN101553941B (https=)
DE (1) DE102006055884B4 (https=)
TW (1) TWI354389B (https=)
WO (1) WO2008040288A2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8643034B2 (en) 2008-02-29 2014-02-04 Osram Opto Semiconductors Gmbh Monolithic, optoelectronic semiconductor body and method for the production thereof
DE102008011848A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102008054218A1 (de) * 2008-10-31 2010-05-06 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip
EP2244316A1 (en) * 2009-04-22 2010-10-27 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO An electronic device and a method of manufacturing the same
DE102010003121A1 (de) * 2010-03-22 2011-09-22 Osram Opto Semiconductors Gmbh Organische Lichtemittierende Vorrichtung mit homogener Leuchtdichteverteilung
DE102014102255B4 (de) 2014-02-21 2021-10-28 Pictiva Displays International Limited Organisches lichtemittierendes Bauelement und Verfahren zum Herstellen eines organischen lichtemittierenden Bauelements
DE102014110969A1 (de) 2014-08-01 2016-02-04 Osram Oled Gmbh Organisches Bauteil sowie Verfahren zur Herstellung eines organischen Bauteils

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030017360A1 (en) * 2001-07-20 2003-01-23 Elizabeth Tai Structure-defining material for OLEDs
KR20060064987A (ko) * 2004-12-09 2006-06-14 한국전자통신연구원 전도성 잉크와 이를 이용한 유기 반도체 트랜지스터 및 그제작 방법
KR20060073514A (ko) * 2004-12-24 2006-06-28 가부시키가이샤 도요다 지도숏키 전계발광 소자

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JPS612296A (ja) * 1984-06-15 1986-01-08 アルプス電気株式会社 透明電極
US5309001A (en) 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
JP2828187B2 (ja) * 1993-04-08 1998-11-25 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JPH07111339A (ja) * 1993-10-12 1995-04-25 Sumitomo Electric Ind Ltd 面発光型半導体発光装置
JPH1140362A (ja) 1997-07-15 1999-02-12 Casio Comput Co Ltd 電界発光素子及びその製造方法
GB9718393D0 (en) * 1997-08-29 1997-11-05 Cambridge Display Tech Ltd Electroluminescent Device
JP2000231985A (ja) * 1999-02-12 2000-08-22 Denso Corp 有機ｅｌ素子
TW425726B (en) * 1999-10-08 2001-03-11 Epistar Corp A high-luminance light emitting diode with distributed contact layer
US6512248B1 (en) 1999-10-19 2003-01-28 Showa Denko K.K. Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp
DE10147887C2 (de) 2001-09-28 2003-10-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit einem Kontakt, der eine Mehrzahl von voneinander beabstandeten Kontaktstellen umfaßt
JP2003308968A (ja) * 2002-04-12 2003-10-31 Rohm Co Ltd エレクトロルミネッセンス発光素子及びその製法
GB0218202D0 (en) 2002-08-06 2002-09-11 Avecia Ltd Organic light emitting diodes
JP4114551B2 (ja) * 2003-06-06 2008-07-09 株式会社豊田自動織機 補助電極を用いた面状発光装置
EP1684550A4 (en) 2003-10-02 2011-08-24 Toyota Jidoshokki Kk LIGHT EMISSION ELEMENT WITH ELECTRICAL FIELD
US20070075636A1 (en) * 2005-09-30 2007-04-05 Fuji Photo Film Co., Ltd. Organic electroluminescent element
US7498735B2 (en) * 2005-10-18 2009-03-03 Eastman Kodak Company OLED device having improved power distribution
DE102006013408A1 (de) * 2006-03-17 2007-09-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Leuchtdiodenelement
US7928537B2 (en) * 2006-03-31 2011-04-19 Fujifilm Corporation Organic electroluminescent device
TWI331483B (en) * 2006-08-07 2010-10-01 Ritdisplay Corp Organic light emitting device with heat dissipation structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030017360A1 (en) * 2001-07-20 2003-01-23 Elizabeth Tai Structure-defining material for OLEDs
KR20060064987A (ko) * 2004-12-09 2006-06-14 한국전자통신연구원 전도성 잉크와 이를 이용한 유기 반도체 트랜지스터 및 그제작 방법
KR20060073514A (ko) * 2004-12-24 2006-06-28 가부시키가이샤 도요다 지도숏키 전계발광 소자

Also Published As

Publication number Publication date
JP5424882B2 (ja) 2014-02-26
DE102006055884A1 (de) 2008-04-03
US8749134B2 (en) 2014-06-10
TW200816539A (en) 2008-04-01
US8159129B2 (en) 2012-04-17
EP2067190A2 (de) 2009-06-10
WO2008040288A3 (de) 2008-07-24
KR20090057460A (ko) 2009-06-05
WO2008040288A2 (de) 2008-04-10
JP2010505248A (ja) 2010-02-18
TWI354389B (en) 2011-12-11
US20120176027A1 (en) 2012-07-12
CN101553941B (zh) 2012-06-20
CN101553941A (zh) 2009-10-07
DE102006055884B4 (de) 2023-03-16
US20100007269A1 (en) 2010-01-14

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