Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/20—Electrodes
  • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
  • H10F77/254—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising a metal, e.g. transparent gold
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
  • H10K50/14—Carrier transporting layers
  • H10K50/16—Electron transporting layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/805—Electrodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/805—Electrodes
  • H10K50/82—Cathodes
  • H10K50/826—Multilayers, e.g. opaque multilayers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/85—Arrangements for extracting light from the devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/10—Deposition of organic active material
  • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
  • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
  • H10K2102/301—Details of OLEDs
  • H10K2102/351—Thickness

Definitions

• Radiation-emitting devices are suitable as large-area, thin light-emitting elements. However, due to their construction, they have a voltage drop along the lateral direction, which affects the luminance and thus the brightness. The emitted light is thus not homogeneous, but has differences in the local luminance.
• the object of the invention is to provide a radiation-emitting device, which is characterized by an improved, homogenized luminance and thus reduces the above-mentioned disadvantages.
• the first contact is present on the side of the first electrode surface.
• the first electrode surface can be supplied with voltage.
• a third contact is provided laterally of the second electrode surface, whereby the second electrode surface can be supplied with voltage.
• TCOs do not necessarily correspond to a stoichiometric composition and may also be p- or n-doped.
• the distribution density of the insulating and / or non-transparent elements decreases with increasing distance from the first and / or third contacting. Furthermore, the insulating and / or non-transparent elements present between the first and second electrode surfaces can prevent emission of radiation from the device in these subregions.
• This has the advantage that the regions of the layer sequence that would have a high luminance without the elements and that are close to the first and / or third contact, a high distribution density of insulating and / or non-transparent elements and the regions which, without the elements, would have a reduced luminance compared to the regions closer to the contacting and which are located farther away from the contacting, have a low distribution density of insulating and / or non-transparent elements.
• the radiation emission is thus reduced more by the elements in the areas of normally high luminance than in areas of normally low luminance.
• the luminance difference across the area is reduced or compensated with a suitable variation of the distribution density.
• the distribution density of the insulating and / or non-transparent elements is chosen so that the difference in the luminance of the radiation emitted by the device between different areas of the device with different distribution densities of the elements is not more than 20%.
• Brightness difference is barely perceptible by an external observer and conveys an improved, more homogeneous luminance.
• the insulating and / or non-transparent elements can furthermore be formed in a line shape and arranged in a periodic structure in the functional layer.
• a periodic structure may include, for example, a grid.
• the grid may have a grid spacing between adjacent line-shaped elements, which increases with increasing distance from the first and / or third contact.
• Such a grid with varying periodicity can be easily and inexpensively in the Install radiation-emitting device without significantly changing the layer sequence of the device. Also, the manufacturing process does not have to be changed over to install such a grid in the device.
• the intensity of the emitted radiation can decrease with increasing layer thickness. This means that with increasing distance from the contacting, the lattice spacing between adjacent line-shaped elements becomes larger, and thus the layer thickness of the functional layer present between the linear elements becomes smaller. In the areas near the contact, in which without the linear elements a stronger intensity of
• the material of the electrically insulating elements may be transparent to the emitted radiation and the size of the insulating elements may advantageously comprise a few micrometers, preferably less than 200 microns, preferably less than 100 microns, more preferably less than 20 microns.
• the advantage here is that the insulating elements, and thus the non-luminous regions of the radiation-emitting device, are generally not resolvable with the naked eye and thus do not disturb the overall image of the luminous area. Due to the varying distribution density, only as many insulating elements are present as necessary, so that only a small area coverage of the first and / or second electrode surface is present through the electrically insulating elements.
• Electrode area Their distribution density decreases favorably with increasing distance from the first and / or third contact.
• adjacent conductor tracks have different lengths and the length distribution of the conductor tracks, starting from the first and / or third contacting, has at least one maximum and one minimum.
• This embodiment has the advantage that due to the varying distribution density as a function of the distance from the first and / or third contact, the emitted radiation is modified in such a way that the
• the distribution density of the conductor tracks, which extend from the second and / or fourth contact via the electrode surface decreases with increasing distance and if the outgoing from the first and second and / or third and fourth contact tracks are not overlap and so do not exceed the brightness minimum. Furthermore, it is advantageous if adjacent conductor tracks have different lengths and the
• FIG. 5 shows the luminance in cross section over a conventional OLED.
• FIG. 13 shows a schematic cross section to FIG. 12, with the layer thickness between the line-shaped elements.

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• Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Electroluminescent Light Sources (AREA)

Priority Applications (6)

Applications Claiming Priority (4)

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Publications (2)

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Family Applications (1)

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• 2006
  • 2006-11-27 DE DE102006055884.7A patent/DE102006055884B4/de not_active Expired - Fee Related
• 2007
  • 2007-09-11 CN CN200780043888.5A patent/CN101553941B/zh not_active Expired - Fee Related
  • 2007-09-11 US US12/443,324 patent/US8159129B2/en active Active
  • 2007-09-11 WO PCT/DE2007/001637 patent/WO2008040288A2/de not_active Ceased
  • 2007-09-11 JP JP2009529519A patent/JP5424882B2/ja not_active Expired - Fee Related
  • 2007-09-11 KR KR1020097008354A patent/KR101424305B1/ko not_active Expired - Fee Related
  • 2007-09-11 EP EP07817510A patent/EP2067190A2/de not_active Withdrawn
  • 2007-09-19 TW TW096134771A patent/TWI354389B/zh not_active IP Right Cessation
• 2012
  • 2012-03-20 US US13/425,164 patent/US8749134B2/en active Active

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