KR101423055B1 - 반도체 장치를 갖는 광전 변환 소자 및 이것을 사용한반도체 장치 - Google Patents

반도체 장치를 갖는 광전 변환 소자 및 이것을 사용한반도체 장치 Download PDF

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Publication number
KR101423055B1
KR101423055B1 KR1020080026486A KR20080026486A KR101423055B1 KR 101423055 B1 KR101423055 B1 KR 101423055B1 KR 1020080026486 A KR1020080026486 A KR 1020080026486A KR 20080026486 A KR20080026486 A KR 20080026486A KR 101423055 B1 KR101423055 B1 KR 101423055B1
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South Korea
Prior art keywords
electrode
layer
photoelectric conversion
insulating film
interlayer insulating
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Expired - Fee Related
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KR1020080026486A
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English (en)
Korean (ko)
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KR20080093867A (ko
Inventor
쿠수모토 나오토
니시 카즈오
스가와라 유스케
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07234—Using a reflow oven
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07235—Applying EM radiation, e.g. induction heating or using a laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Wire Bonding (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020080026486A 2007-04-18 2008-03-21 반도체 장치를 갖는 광전 변환 소자 및 이것을 사용한반도체 장치 Expired - Fee Related KR101423055B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007108795 2007-04-18
JPJP-P-2007-00108795 2007-04-18

Publications (2)

Publication Number Publication Date
KR20080093867A KR20080093867A (ko) 2008-10-22
KR101423055B1 true KR101423055B1 (ko) 2014-07-25

Family

ID=40035104

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080026486A Expired - Fee Related KR101423055B1 (ko) 2007-04-18 2008-03-21 반도체 장치를 갖는 광전 변환 소자 및 이것을 사용한반도체 장치

Country Status (4)

Country Link
US (1) US7679091B2 (enExample)
JP (1) JP5355915B2 (enExample)
KR (1) KR101423055B1 (enExample)
CN (1) CN101290940B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9095066B2 (en) * 2008-06-18 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Printed board
US9048788B2 (en) * 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
US10861816B2 (en) 2018-10-18 2020-12-08 Toyota Motor Engineering & Manufacturing North America, Inc. Electronic assemblies having a mesh bond material and methods of forming thereof
CN112649711B (zh) * 2019-10-12 2022-04-15 成都辰显光电有限公司 微发光二极管的检测装置及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6731003B2 (en) * 2002-03-12 2004-05-04 Fairchild Semiconductor Corporation Wafer-level coated copper stud bumps
KR20050033487A (ko) * 2003-10-06 2005-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR20060120492A (ko) * 2005-05-20 2006-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 디바이스, 그 제조 방법 및 반도체 디바이스

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JP3347804B2 (ja) * 1993-03-22 2002-11-20 株式会社半導体エネルギー研究所 半導体回路の作製方法
JPH0767152B2 (ja) * 1993-03-25 1995-07-19 日本電気株式会社 イメージセンサとその駆動方法
JPH1051033A (ja) 1996-07-30 1998-02-20 Showa Denko Kk 半導体受発光素子
JPH11191640A (ja) 1997-12-26 1999-07-13 Showa Denko Kk 半導体受発光素子用の電極
JPH11307756A (ja) * 1998-02-20 1999-11-05 Canon Inc 光電変換装置および放射線読取装置
US6401183B1 (en) * 1999-04-01 2002-06-04 Flash Vos, Inc. System and method for operating system independent storage management
US6995753B2 (en) * 2000-06-06 2006-02-07 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
JP5110748B2 (ja) 2000-06-06 2012-12-26 株式会社半導体エネルギー研究所 表示装置
GB0216075D0 (en) * 2002-07-11 2002-08-21 Qinetiq Ltd Photodetector circuits
JP4283087B2 (ja) 2002-10-30 2009-06-24 株式会社半導体エネルギー研究所 光電変換素子
JP4481135B2 (ja) * 2003-10-06 2010-06-16 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US7495272B2 (en) * 2003-10-06 2009-02-24 Semiconductor Energy Labortaory Co., Ltd. Semiconductor device having photo sensor element and amplifier circuit
JP4827396B2 (ja) * 2003-10-06 2011-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1542272B1 (en) * 2003-10-06 2016-07-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN100594619C (zh) * 2004-05-21 2010-03-17 株式会社半导体能源研究所 半导体器件及其制造方法
JP2006032753A (ja) * 2004-07-20 2006-02-02 Sony Corp 半導体装置および半導体装置の製造方法
US7492028B2 (en) * 2005-02-18 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
JP4809715B2 (ja) * 2005-05-20 2011-11-09 株式会社半導体エネルギー研究所 光電変換装置及びその作製方法、並びに半導体装置
JP2007081001A (ja) * 2005-09-13 2007-03-29 Matsushita Electric Ind Co Ltd 電子部品

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6731003B2 (en) * 2002-03-12 2004-05-04 Fairchild Semiconductor Corporation Wafer-level coated copper stud bumps
KR20050033487A (ko) * 2003-10-06 2005-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR20060120492A (ko) * 2005-05-20 2006-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 디바이스, 그 제조 방법 및 반도체 디바이스

Also Published As

Publication number Publication date
US7679091B2 (en) 2010-03-16
JP5355915B2 (ja) 2013-11-27
JP2008288562A (ja) 2008-11-27
CN101290940A (zh) 2008-10-22
US20080308851A1 (en) 2008-12-18
CN101290940B (zh) 2011-08-31
KR20080093867A (ko) 2008-10-22

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