KR101421761B1 - Ｌｅｄ 반도체 몸체 및 ｌｅｄ 반도체 몸체의 이용 - Google Patents

Ｌｅｄ 반도체 몸체 및 ｌｅｄ 반도체 몸체의 이용 Download PDF

Info

Publication number
KR101421761B1
KR101421761B1 KR1020097008601A KR20097008601A KR101421761B1 KR 101421761 B1 KR101421761 B1 KR 101421761B1 KR 1020097008601 A KR1020097008601 A KR 1020097008601A KR 20097008601 A KR20097008601 A KR 20097008601A KR 101421761 B1 KR101421761 B1 KR 101421761B1
Authority
KR
South Korea
Prior art keywords
semiconductor body
led semiconductor
voltage
led
active layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020097008601A
Other languages
English (en)
Korean (ko)
Other versions
KR20090064469A (ko
Inventor
레이너 윈디쉬
랄프 워스
스테판 그뢰쉬
조지 보그너
건터 컬쉬버거
클라우스 스트레우벨
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20090064469A publication Critical patent/KR20090064469A/ko
Application granted granted Critical
Publication of KR101421761B1 publication Critical patent/KR101421761B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips

Landscapes

  • Led Devices (AREA)
KR1020097008601A 2006-09-28 2007-09-19 Ｌｅｄ 반도체 몸체 및 ｌｅｄ 반도체 몸체의 이용 Expired - Fee Related KR101421761B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006046038A DE102006046038A1 (de) 2006-09-28 2006-09-28 LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
DE102006046038.3 2006-09-28
PCT/DE2007/001693 WO2008040300A1 (de) 2006-09-28 2007-09-19 Led-halbleiterkörper und verwendung eines led-halbleiterkörpers

Publications (2)

Publication Number Publication Date
KR20090064469A KR20090064469A (ko) 2009-06-18
KR101421761B1 true KR101421761B1 (ko) 2014-07-22

Family

ID=39118340

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097008601A Expired - Fee Related KR101421761B1 (ko) 2006-09-28 2007-09-19 Ｌｅｄ 반도체 몸체 및 ｌｅｄ 반도체 몸체의 이용

Country Status (8)

Country Link
US (1) US8283684B2 (https=)
EP (1) EP2062296B1 (https=)
JP (1) JP5479098B2 (https=)
KR (1) KR101421761B1 (https=)
CN (1) CN101563778B (https=)
DE (1) DE102006046038A1 (https=)
TW (1) TWI384644B (https=)
WO (1) WO2008040300A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008025160A1 (de) * 2008-05-26 2009-12-03 Osram Opto Semiconductors Gmbh Projektor für kleinste Projektionsflächen und Verwendung einer Mehrfarben-LED in einem Projektor
KR101332794B1 (ko) * 2008-08-05 2013-11-25 삼성전자주식회사 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법
DE102008053731B4 (de) * 2008-10-29 2024-10-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US7983317B2 (en) * 2008-12-16 2011-07-19 Corning Incorporated MQW laser structure comprising plural MQW regions
DE102010023342A1 (de) 2010-06-10 2011-12-15 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und Leuchtmittel insbesondere mit solch einer Leuchtdiodenanordnung
CN101902856A (zh) * 2010-07-05 2010-12-01 陆敬仁 又一种用交流电直接驱动普通led的方法
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US9490239B2 (en) * 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US9070613B2 (en) * 2011-09-07 2015-06-30 Lg Innotek Co., Ltd. Light emitting device
EP2618388B1 (en) * 2012-01-20 2019-10-02 OSRAM Opto Semiconductors GmbH Light-emitting diode chip
TWI470826B (zh) * 2012-03-30 2015-01-21 Phostek Inc 發光二極體裝置
JP6071650B2 (ja) * 2013-03-01 2017-02-01 スタンレー電気株式会社 半導体発光装置
US9825088B2 (en) * 2015-07-24 2017-11-21 Epistar Corporation Light-emitting device and manufacturing method thereof
US10784398B2 (en) 2015-12-24 2020-09-22 Vuereal Inc. Vertical solid state devices
US9859470B2 (en) 2016-03-10 2018-01-02 Epistar Corporation Light-emitting device with adjusting element
US11721784B2 (en) 2017-03-30 2023-08-08 Vuereal Inc. High efficient micro devices
US11600743B2 (en) 2017-03-30 2023-03-07 Vuereal Inc. High efficient microdevices
CN110709989B (zh) * 2017-03-30 2023-12-01 维耶尔公司 垂直固态装置
JP7323783B2 (ja) 2019-07-19 2023-08-09 日亜化学工業株式会社 発光装置の製造方法及び発光装置
DE102020001353B3 (de) * 2020-03-03 2020-12-31 Azur Space Solar Power Gmbh Stapelförmiges photonisches lll-V-Halbleiterbauelement und Optokoppler
US11489089B2 (en) 2020-06-19 2022-11-01 Lextar Electronics Corporation Light emitting device with two vertically-stacked light emitting cells
US20230307597A1 (en) * 2020-07-03 2023-09-28 Lg Electronics Inc. Display device using micro led
WO2022178393A1 (en) * 2021-02-22 2022-08-25 The Regents Of The University Of California Monolithic, cascaded, multiple color light-emitting diodes with independent junction control
CN117438516A (zh) * 2023-12-21 2024-01-23 江西兆驰半导体有限公司 一种垂直结构高压Micro LED芯片及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE9404982U1 (de) * 1994-03-23 1994-06-01 Siemens AG, 80333 München Leuchtdiode mit hohem Wirkungsgrad
WO2005073485A2 (de) * 2004-01-29 2005-08-11 Rwe Space Solar Power Gmbh Aktive zonen aufweisende halbleiterstruktur
JP2006080442A (ja) * 2004-09-13 2006-03-23 Rohm Co Ltd 半導体発光装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2323971C2 (de) 1973-05-11 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Bauelement mit Lumineszenzdiode
DE2342298A1 (de) * 1973-08-22 1975-02-27 Licentia Gmbh Mehrfach-leuchtdiode
GB1485462A (en) * 1975-01-09 1977-09-14 Thorn Electrical Ind Ltd High voltage semi-conductor lamps
DD219086A3 (de) * 1982-01-04 1985-02-20 Karl Marx Stadt Tech Hochschul Wechselspannungsangesteuerte lumineszenzdioden
US4939426A (en) * 1987-03-19 1990-07-03 United States Of America Light emitting diode array
DE3929477A1 (de) * 1989-09-05 1991-03-07 Siemens Ag Led-anordnung
JP2549205B2 (ja) * 1990-12-26 1996-10-30 ローム株式会社 Ｌｅｄアレイ光源
JP3352840B2 (ja) * 1994-03-14 2002-12-03 株式会社東芝 逆並列接続型双方向性半導体スイッチ
JP2000244020A (ja) * 1999-02-23 2000-09-08 Matsushita Electric Works Ltd 光源装置
US6885035B2 (en) * 1999-12-22 2005-04-26 Lumileds Lighting U.S., Llc Multi-chip semiconductor LED assembly
US6323598B1 (en) * 2000-09-29 2001-11-27 Aerospace Optics, Inc. Enhanced trim resolution voltage-controlled dimming led driver
US6547249B2 (en) * 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
WO2003026355A2 (de) * 2001-08-30 2003-03-27 Osram Opto Semiconductors Gmbh Elektrolumineszierender körper
US6822991B2 (en) * 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
JP4072632B2 (ja) 2002-11-29 2008-04-09 豊田合成株式会社 発光装置及び発光方法
TW591811B (en) * 2003-01-02 2004-06-11 Epitech Technology Corp Ltd Color mixing light emitting diode
CN1275337C (zh) * 2003-09-17 2006-09-13 北京工大智源科技发展有限公司 高效高亮度多有源区隧道再生白光发光二极管
JP2005229037A (ja) 2004-02-16 2005-08-25 Kankyo Shomei:Kk 発光ダイオード点灯回路
DE102005007601B4 (de) 2004-02-20 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement, Vorrichtung mit einer Mehrzahl optoelektronischer Bauelemente und Verfahren zur Herstellung eines optoelektronischen Bauelements
US7095052B2 (en) * 2004-10-22 2006-08-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Method and structure for improved LED light output
US7772601B2 (en) * 2005-02-04 2010-08-10 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and method of fabricating the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE9404982U1 (de) * 1994-03-23 1994-06-01 Siemens AG, 80333 München Leuchtdiode mit hohem Wirkungsgrad
WO2005073485A2 (de) * 2004-01-29 2005-08-11 Rwe Space Solar Power Gmbh Aktive zonen aufweisende halbleiterstruktur
JP2006080442A (ja) * 2004-09-13 2006-03-23 Rohm Co Ltd 半導体発光装置

Also Published As

Publication number Publication date
DE102006046038A1 (de) 2008-04-03
US20110240955A1 (en) 2011-10-06
US8283684B2 (en) 2012-10-09
JP2010505251A (ja) 2010-02-18
WO2008040300A1 (de) 2008-04-10
CN101563778A (zh) 2009-10-21
CN101563778B (zh) 2014-07-09
EP2062296A1 (de) 2009-05-27
TWI384644B (zh) 2013-02-01
JP5479098B2 (ja) 2014-04-23
TW200826326A (en) 2008-06-16
EP2062296B1 (de) 2017-07-05
KR20090064469A (ko) 2009-06-18

Similar Documents

Publication Publication Date Title
KR101421761B1 (ko) Ｌｅｄ 반도체 몸체 및 ｌｅｄ 반도체 몸체의 이용
JP5193048B2 (ja) 垂直に積層された発光ダイオードを有する発光素子
US10593838B2 (en) Semiconductor device
JP5497641B2 (ja) 一体型定電流駆動回路を有するｌｅｄ
CN100377369C (zh) 氮化物半导体元件
JP3802911B2 (ja) 半導体発光装置
CN102176461B (zh) Led半导体及led半导体的应用
KR101356271B1 (ko) Ｌｅｄ 반도체 바디 및 ｌｅｄ 반도체 바디의 이용
US8716693B2 (en) Light emitting device and light emitting device package for improving a light emission efficiency
JP6378876B2 (ja) 発光モジュール及びそれを含む照明ユニット
US20100025652A1 (en) Multiple Quantum-Well Structure, Radiation-Emitting Semiconductor Base and Radiation-Emitting Component
TW201119506A (en) Light emitting device
KR20160044638A (ko) 반도체 발광 소자
JP3543809B2 (ja) 窒化物半導体素子
JP3903988B2 (ja) 窒化物半導体素子
EP2816616B1 (en) Light emitting device and lighting system
KR20120063953A (ko) 발광 소자 및 발광 소자 패키지
CN102347322B (zh) 发光元件、背光模块装置和照明装置
KR100712891B1 (ko) 복수개의 발광셀 어레이들을 구비하는 교류용 발광다이오드 및 발광 소자
KR20170135381A (ko) 반도체 소자 패키지
KR20200050763A (ko) 발광소자
TW200840081A (en) Led

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

FPAY Annual fee payment

Payment date: 20170707

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20180705

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20190716

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20190716

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000