CN101563778B - Led半导体主体以及led半导体主体的应用 - Google Patents

Led半导体主体以及led半导体主体的应用 Download PDF

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Publication number
CN101563778B
CN101563778B CN200780035954.4A CN200780035954A CN101563778B CN 101563778 B CN101563778 B CN 101563778B CN 200780035954 A CN200780035954 A CN 200780035954A CN 101563778 B CN101563778 B CN 101563778B
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CN
China
Prior art keywords
semiconductor body
led semiconductor
voltage
led
active layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200780035954.4A
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English (en)
Chinese (zh)
Other versions
CN101563778A (zh
Inventor
R·温迪希
R·沃思
S·格罗特希
G·博格纳
G·柯克伯格
K·斯特鲁贝尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN101563778A publication Critical patent/CN101563778A/zh
Application granted granted Critical
Publication of CN101563778B publication Critical patent/CN101563778B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips

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  • Led Devices (AREA)
CN200780035954.4A 2006-09-28 2007-09-19 Led半导体主体以及led半导体主体的应用 Expired - Fee Related CN101563778B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006046038A DE102006046038A1 (de) 2006-09-28 2006-09-28 LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
DE102006046038.3 2006-09-28
PCT/DE2007/001693 WO2008040300A1 (de) 2006-09-28 2007-09-19 Led-halbleiterkörper und verwendung eines led-halbleiterkörpers

Publications (2)

Publication Number Publication Date
CN101563778A CN101563778A (zh) 2009-10-21
CN101563778B true CN101563778B (zh) 2014-07-09

Family

ID=39118340

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200780035954.4A Expired - Fee Related CN101563778B (zh) 2006-09-28 2007-09-19 Led半导体主体以及led半导体主体的应用

Country Status (8)

Country Link
US (1) US8283684B2 (https=)
EP (1) EP2062296B1 (https=)
JP (1) JP5479098B2 (https=)
KR (1) KR101421761B1 (https=)
CN (1) CN101563778B (https=)
DE (1) DE102006046038A1 (https=)
TW (1) TWI384644B (https=)
WO (1) WO2008040300A1 (https=)

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KR101332794B1 (ko) * 2008-08-05 2013-11-25 삼성전자주식회사 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법
DE102008053731B4 (de) * 2008-10-29 2024-10-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US7983317B2 (en) * 2008-12-16 2011-07-19 Corning Incorporated MQW laser structure comprising plural MQW regions
DE102010023342A1 (de) 2010-06-10 2011-12-15 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und Leuchtmittel insbesondere mit solch einer Leuchtdiodenanordnung
CN101902856A (zh) * 2010-07-05 2010-12-01 陆敬仁 又一种用交流电直接驱动普通led的方法
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US9490239B2 (en) * 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US9070613B2 (en) * 2011-09-07 2015-06-30 Lg Innotek Co., Ltd. Light emitting device
EP2618388B1 (en) * 2012-01-20 2019-10-02 OSRAM Opto Semiconductors GmbH Light-emitting diode chip
TWI470826B (zh) * 2012-03-30 2015-01-21 Phostek Inc 發光二極體裝置
JP6071650B2 (ja) * 2013-03-01 2017-02-01 スタンレー電気株式会社 半導体発光装置
US9825088B2 (en) * 2015-07-24 2017-11-21 Epistar Corporation Light-emitting device and manufacturing method thereof
US10784398B2 (en) 2015-12-24 2020-09-22 Vuereal Inc. Vertical solid state devices
US9859470B2 (en) 2016-03-10 2018-01-02 Epistar Corporation Light-emitting device with adjusting element
US11721784B2 (en) 2017-03-30 2023-08-08 Vuereal Inc. High efficient micro devices
US11600743B2 (en) 2017-03-30 2023-03-07 Vuereal Inc. High efficient microdevices
CN110709989B (zh) * 2017-03-30 2023-12-01 维耶尔公司 垂直固态装置
JP7323783B2 (ja) 2019-07-19 2023-08-09 日亜化学工業株式会社 発光装置の製造方法及び発光装置
DE102020001353B3 (de) * 2020-03-03 2020-12-31 Azur Space Solar Power Gmbh Stapelförmiges photonisches lll-V-Halbleiterbauelement und Optokoppler
US11489089B2 (en) 2020-06-19 2022-11-01 Lextar Electronics Corporation Light emitting device with two vertically-stacked light emitting cells
US20230307597A1 (en) * 2020-07-03 2023-09-28 Lg Electronics Inc. Display device using micro led
WO2022178393A1 (en) * 2021-02-22 2022-08-25 The Regents Of The University Of California Monolithic, cascaded, multiple color light-emitting diodes with independent junction control
CN117438516A (zh) * 2023-12-21 2024-01-23 江西兆驰半导体有限公司 一种垂直结构高压Micro LED芯片及其制备方法

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US4939426A (en) * 1987-03-19 1990-07-03 United States Of America Light emitting diode array
EP0493015A2 (en) * 1990-12-26 1992-07-01 Rohm Co., Ltd. LED array type light source
DE9404982U1 (de) * 1994-03-23 1994-06-01 Siemens AG, 80333 München Leuchtdiode mit hohem Wirkungsgrad
DE102004004765A1 (de) * 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur

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DE2342298A1 (de) * 1973-08-22 1975-02-27 Licentia Gmbh Mehrfach-leuchtdiode
GB1485462A (en) * 1975-01-09 1977-09-14 Thorn Electrical Ind Ltd High voltage semi-conductor lamps
DD219086A3 (de) * 1982-01-04 1985-02-20 Karl Marx Stadt Tech Hochschul Wechselspannungsangesteuerte lumineszenzdioden
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US6547249B2 (en) * 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
WO2003026355A2 (de) * 2001-08-30 2003-03-27 Osram Opto Semiconductors Gmbh Elektrolumineszierender körper
US6822991B2 (en) * 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
JP4072632B2 (ja) 2002-11-29 2008-04-09 豊田合成株式会社 発光装置及び発光方法
TW591811B (en) * 2003-01-02 2004-06-11 Epitech Technology Corp Ltd Color mixing light emitting diode
CN1275337C (zh) * 2003-09-17 2006-09-13 北京工大智源科技发展有限公司 高效高亮度多有源区隧道再生白光发光二极管
JP2005229037A (ja) 2004-02-16 2005-08-25 Kankyo Shomei:Kk 発光ダイオード点灯回路
DE102005007601B4 (de) 2004-02-20 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement, Vorrichtung mit einer Mehrzahl optoelektronischer Bauelemente und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP3802911B2 (ja) 2004-09-13 2006-08-02 ローム株式会社 半導体発光装置
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Publication number Priority date Publication date Assignee Title
US4939426A (en) * 1987-03-19 1990-07-03 United States Of America Light emitting diode array
EP0493015A2 (en) * 1990-12-26 1992-07-01 Rohm Co., Ltd. LED array type light source
DE9404982U1 (de) * 1994-03-23 1994-06-01 Siemens AG, 80333 München Leuchtdiode mit hohem Wirkungsgrad
DE102004004765A1 (de) * 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur

Also Published As

Publication number Publication date
DE102006046038A1 (de) 2008-04-03
US20110240955A1 (en) 2011-10-06
US8283684B2 (en) 2012-10-09
JP2010505251A (ja) 2010-02-18
WO2008040300A1 (de) 2008-04-10
CN101563778A (zh) 2009-10-21
KR101421761B1 (ko) 2014-07-22
EP2062296A1 (de) 2009-05-27
TWI384644B (zh) 2013-02-01
JP5479098B2 (ja) 2014-04-23
TW200826326A (en) 2008-06-16
EP2062296B1 (de) 2017-07-05
KR20090064469A (ko) 2009-06-18

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