JP5479098B2 - Ｌｅｄ半導体ボディおよびｌｅｄ半導体ボディの使用方法 - Google Patents

Ｌｅｄ半導体ボディおよびｌｅｄ半導体ボディの使用方法 Download PDF

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JP5479098B2
JP5479098B2 JP2009529522A JP2009529522A JP5479098B2 JP 5479098 B2 JP5479098 B2 JP 5479098B2 JP 2009529522 A JP2009529522 A JP 2009529522A JP 2009529522 A JP2009529522 A JP 2009529522A JP 5479098 B2 JP5479098 B2 JP 5479098B2
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semiconductor body
led semiconductor
led
voltage
active layers
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Japanese (ja)
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JP2010505251A (ja
JP2010505251A5 (https=
Inventor
ヴィンディッシュ ライナー
ヴィルト ラルフ
グレーチュ シュテファン
ボーグナー ゲオルク
キルヒベルガー ギュンター
シュトロイベル クラウス
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
JP2009529522A 2006-09-28 2007-09-19 Ｌｅｄ半導体ボディおよびｌｅｄ半導体ボディの使用方法 Expired - Fee Related JP5479098B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006046038A DE102006046038A1 (de) 2006-09-28 2006-09-28 LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
DE102006046038.3 2006-09-28
PCT/DE2007/001693 WO2008040300A1 (de) 2006-09-28 2007-09-19 Led-halbleiterkörper und verwendung eines led-halbleiterkörpers

Publications (3)

Publication Number Publication Date
JP2010505251A JP2010505251A (ja) 2010-02-18
JP2010505251A5 JP2010505251A5 (https=) 2011-06-16
JP5479098B2 true JP5479098B2 (ja) 2014-04-23

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JP2009529522A Expired - Fee Related JP5479098B2 (ja) 2006-09-28 2007-09-19 Ｌｅｄ半導体ボディおよびｌｅｄ半導体ボディの使用方法

Country Status (8)

Country Link
US (1) US8283684B2 (https=)
EP (1) EP2062296B1 (https=)
JP (1) JP5479098B2 (https=)
KR (1) KR101421761B1 (https=)
CN (1) CN101563778B (https=)
DE (1) DE102006046038A1 (https=)
TW (1) TWI384644B (https=)
WO (1) WO2008040300A1 (https=)

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DE102008025160A1 (de) * 2008-05-26 2009-12-03 Osram Opto Semiconductors Gmbh Projektor für kleinste Projektionsflächen und Verwendung einer Mehrfarben-LED in einem Projektor
KR101332794B1 (ko) * 2008-08-05 2013-11-25 삼성전자주식회사 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법
DE102008053731B4 (de) * 2008-10-29 2024-10-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US7983317B2 (en) * 2008-12-16 2011-07-19 Corning Incorporated MQW laser structure comprising plural MQW regions
DE102010023342A1 (de) 2010-06-10 2011-12-15 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und Leuchtmittel insbesondere mit solch einer Leuchtdiodenanordnung
CN101902856A (zh) * 2010-07-05 2010-12-01 陆敬仁 又一种用交流电直接驱动普通led的方法
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US9490239B2 (en) * 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US9070613B2 (en) * 2011-09-07 2015-06-30 Lg Innotek Co., Ltd. Light emitting device
EP2618388B1 (en) * 2012-01-20 2019-10-02 OSRAM Opto Semiconductors GmbH Light-emitting diode chip
TWI470826B (zh) * 2012-03-30 2015-01-21 Phostek Inc 發光二極體裝置
JP6071650B2 (ja) * 2013-03-01 2017-02-01 スタンレー電気株式会社 半導体発光装置
US9825088B2 (en) * 2015-07-24 2017-11-21 Epistar Corporation Light-emitting device and manufacturing method thereof
US10784398B2 (en) 2015-12-24 2020-09-22 Vuereal Inc. Vertical solid state devices
US9859470B2 (en) 2016-03-10 2018-01-02 Epistar Corporation Light-emitting device with adjusting element
US11721784B2 (en) 2017-03-30 2023-08-08 Vuereal Inc. High efficient micro devices
US11600743B2 (en) 2017-03-30 2023-03-07 Vuereal Inc. High efficient microdevices
CN110709989B (zh) * 2017-03-30 2023-12-01 维耶尔公司 垂直固态装置
JP7323783B2 (ja) 2019-07-19 2023-08-09 日亜化学工業株式会社 発光装置の製造方法及び発光装置
DE102020001353B3 (de) * 2020-03-03 2020-12-31 Azur Space Solar Power Gmbh Stapelförmiges photonisches lll-V-Halbleiterbauelement und Optokoppler
US11489089B2 (en) 2020-06-19 2022-11-01 Lextar Electronics Corporation Light emitting device with two vertically-stacked light emitting cells
US20230307597A1 (en) * 2020-07-03 2023-09-28 Lg Electronics Inc. Display device using micro led
WO2022178393A1 (en) * 2021-02-22 2022-08-25 The Regents Of The University Of California Monolithic, cascaded, multiple color light-emitting diodes with independent junction control
CN117438516A (zh) * 2023-12-21 2024-01-23 江西兆驰半导体有限公司 一种垂直结构高压Micro LED芯片及其制备方法

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Also Published As

Publication number Publication date
DE102006046038A1 (de) 2008-04-03
US20110240955A1 (en) 2011-10-06
US8283684B2 (en) 2012-10-09
JP2010505251A (ja) 2010-02-18
WO2008040300A1 (de) 2008-04-10
CN101563778A (zh) 2009-10-21
KR101421761B1 (ko) 2014-07-22
CN101563778B (zh) 2014-07-09
EP2062296A1 (de) 2009-05-27
TWI384644B (zh) 2013-02-01
TW200826326A (en) 2008-06-16
EP2062296B1 (de) 2017-07-05
KR20090064469A (ko) 2009-06-18

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