KR101418615B1 - 반절연 에피텍시 상의 실리콘 탄화물 및 관련 와이드 밴드갭 트랜지스터들 - Google Patents

반절연 에피텍시 상의 실리콘 탄화물 및 관련 와이드 밴드갭 트랜지스터들 Download PDF

Info

Publication number
KR101418615B1
KR101418615B1 KR1020097000874A KR20097000874A KR101418615B1 KR 101418615 B1 KR101418615 B1 KR 101418615B1 KR 1020097000874 A KR1020097000874 A KR 1020097000874A KR 20097000874 A KR20097000874 A KR 20097000874A KR 101418615 B1 KR101418615 B1 KR 101418615B1
Authority
KR
South Korea
Prior art keywords
epitaxial layer
boron
substrate
semi
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020097000874A
Other languages
English (en)
Korean (ko)
Other versions
KR20090033224A (ko
Inventor
마이클 에스. 마졸라
Original Assignee
파워 인티그레이션즈, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 파워 인티그레이션즈, 인크. filed Critical 파워 인티그레이션즈, 인크.
Publication of KR20090033224A publication Critical patent/KR20090033224A/ko
Application granted granted Critical
Publication of KR101418615B1 publication Critical patent/KR101418615B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/035—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon carbide [SiC] technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020097000874A 2006-06-19 2007-06-19 반절연 에피텍시 상의 실리콘 탄화물 및 관련 와이드 밴드갭 트랜지스터들 Expired - Fee Related KR101418615B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US80513906P 2006-06-19 2006-06-19
US60/805,139 2006-06-19
US11/764,593 2007-06-18
US11/764,593 US7821015B2 (en) 2006-06-19 2007-06-18 Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
PCT/US2007/071549 WO2007149849A1 (en) 2006-06-19 2007-06-19 Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy

Publications (2)

Publication Number Publication Date
KR20090033224A KR20090033224A (ko) 2009-04-01
KR101418615B1 true KR101418615B1 (ko) 2014-07-14

Family

ID=38833766

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097000874A Expired - Fee Related KR101418615B1 (ko) 2006-06-19 2007-06-19 반절연 에피텍시 상의 실리콘 탄화물 및 관련 와이드 밴드갭 트랜지스터들

Country Status (10)

Country Link
US (3) US7821015B2 (enExample)
EP (1) EP2030243A1 (enExample)
JP (1) JP5580045B2 (enExample)
KR (1) KR101418615B1 (enExample)
CN (1) CN102723360A (enExample)
AU (1) AU2007261054B2 (enExample)
CA (1) CA2654634A1 (enExample)
NZ (1) NZ572662A (enExample)
PH (1) PH12012501605A1 (enExample)
WO (1) WO2007149849A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8193537B2 (en) 2006-06-19 2012-06-05 Ss Sc Ip, Llc Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
US7821015B2 (en) 2006-06-19 2010-10-26 Semisouth Laboratories, Inc. Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
US8330170B2 (en) * 2008-12-05 2012-12-11 Micron Technology, Inc. Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods
KR20120032531A (ko) * 2009-06-19 2012-04-05 에스에스 에스시 아이피, 엘엘시 이온주입 없이 ｖｊｆｅｔ와 ｂｊｔ를 제조하는 방법 및 그 장치
JP5343904B2 (ja) 2010-03-23 2013-11-13 住友電気工業株式会社 半導体装置
US9064924B2 (en) 2012-05-24 2015-06-23 International Business Machines Corporation Heterojunction bipolar transistors with intrinsic interlayers
US8889529B2 (en) 2012-05-24 2014-11-18 International Business Machines Corporation Heterojunction bipolar transistors with thin epitaxial contacts
US8980737B2 (en) * 2012-05-24 2015-03-17 International Business Machines Corporation Methods of forming contact regions using sacrificial layers
US9093548B2 (en) 2012-06-06 2015-07-28 International Business Machines Corporation Thin film hybrid junction field effect transistor
US8665013B2 (en) * 2012-07-25 2014-03-04 Raytheon Company Monolithic integrated circuit chip integrating multiple devices
US11309389B2 (en) * 2012-11-30 2022-04-19 Lx Semicon Co., Ltd. Epitaxial wafer and switch element and light-emitting element using same
US9087705B2 (en) 2013-06-05 2015-07-21 International Business Machines Corporation Thin-film hybrid complementary circuits
SE1430022A1 (sv) * 2013-07-01 2015-01-02 Billiga semi-isolerande SiC-substrat
CN105409005B (zh) 2013-08-23 2019-04-02 英特尔公司 在mos晶体管的iv族衬底上沉积的iii-v沟道的高阻层
US10128364B2 (en) 2016-03-28 2018-11-13 Nxp Usa, Inc. Semiconductor devices with an enhanced resistivity region and methods of fabrication therefor
US10644142B2 (en) 2017-12-22 2020-05-05 Nxp Usa, Inc. Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor
CN108417624B (zh) * 2018-05-11 2021-02-02 安徽工业大学 一种提高短路鲁棒性的igbt及其制备方法
CN108417638B (zh) * 2018-05-11 2021-02-02 安徽工业大学 含半绝缘区的mosfet及其制备方法
CN108417623B (zh) * 2018-05-11 2021-02-02 安徽工业大学 含半绝缘区的igbt及其制备方法
CN108649064B (zh) * 2018-05-11 2021-03-16 安徽工业大学 一种提高uis雪崩耐量的mosfet及其制备方法
WO2020256719A1 (en) 2019-06-19 2020-12-24 Power Integrations, Inc. Coupled polysilicon guard rings for enhancing breakdown voltage in a power semiconductor device
CN113774494B (zh) * 2021-11-15 2022-03-29 浙江大学杭州国际科创中心 一种半绝缘型碳化硅单晶片剥离方法及剥离装置
US12408360B2 (en) * 2022-05-13 2025-09-02 Wolfspeed, Inc. Vertical power devices having mesas and etched trenches therebetween
US20240395804A1 (en) * 2023-05-26 2024-11-28 Cambridge Gan Devices Limited Power semiconductor device comprising a wide bandgap substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4947218A (en) * 1987-11-03 1990-08-07 North Carolina State University P-N junction diodes in silicon carbide
US5135885A (en) * 1989-03-27 1992-08-04 Sharp Corporation Method of manufacturing silicon carbide fets
US20020149021A1 (en) * 2001-01-03 2002-10-17 Casady Jeffrey B. Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226974B2 (enExample) 1973-02-14 1977-07-18
US4207583A (en) 1978-07-27 1980-06-10 Electric Power Research Institute, Inc. Multiple gated light fired thyristor with non-critical light pipe coupling
JPS5625743A (en) 1979-08-08 1981-03-12 Matsushita Electric Ind Co Ltd Electrophotographic receptor
US4465750A (en) 1981-12-22 1984-08-14 Canon Kabushiki Kaisha Photoconductive member with a -Si having two layer regions
US4825061A (en) 1987-08-07 1989-04-25 Center For Innovative Technology Optically controlled bulk semiconductor switch not requiring radiation to sustain conduction
US5270554A (en) * 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
US5385855A (en) 1994-02-24 1995-01-31 General Electric Company Fabrication of silicon carbide integrated circuits
USH1717H (en) 1995-11-16 1998-04-07 The United States Of America As Represented By The Secretary Of The Navy Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources
US6680489B1 (en) 1995-12-20 2004-01-20 Advanced Technology Materials, Inc. Amorphous silicon carbide thin film coating
US6046466A (en) 1997-09-12 2000-04-04 Nikon Corporation Solid-state imaging device
US6063186A (en) * 1997-12-17 2000-05-16 Cree, Inc. Growth of very uniform silicon carbide epitaxial layers
US6100169A (en) * 1998-06-08 2000-08-08 Cree, Inc. Methods of fabricating silicon carbide power devices by controlled annealing
JP3430083B2 (ja) 1999-10-21 2003-07-28 本田技研工業株式会社 電池電圧測定装置
ATE535010T1 (de) 2001-07-12 2011-12-15 Univ Mississippi State Verfahren zur herstllung selbstausgerichteten transistortopologien in siliziumkarbid durch verwendung selektiver epitaxie
US7498066B2 (en) 2002-05-08 2009-03-03 Btu International Inc. Plasma-assisted enhanced coating
US20060228497A1 (en) 2002-05-08 2006-10-12 Satyendra Kumar Plasma-assisted coating
US20050233091A1 (en) 2002-05-08 2005-10-20 Devendra Kumar Plasma-assisted coating
JP2004247545A (ja) * 2003-02-14 2004-09-02 Nissan Motor Co Ltd 半導体装置及びその製造方法
KR100593264B1 (ko) 2003-06-26 2006-06-26 학교법인 포항공과대학교 ｐ-타입 반도체 박막과 ｎ-타입 산화아연(ＺｎＯ)계나노막대의 이종접합 구조체, 이의 제법 및 이를 이용한소자
TWI228320B (en) 2003-09-09 2005-02-21 Ind Tech Res Inst An avalanche photo-detector(APD) with high saturation power, high gain-bandwidth product
US7470967B2 (en) * 2004-03-12 2008-12-30 Semisouth Laboratories, Inc. Self-aligned silicon carbide semiconductor devices and methods of making the same
JP4832723B2 (ja) * 2004-03-29 2011-12-07 日本碍子株式会社 能動的高抵抗半導体層を有する半導体装置
US20060062897A1 (en) 2004-09-17 2006-03-23 Applied Materials, Inc Patterned wafer thickness detection system
US7569900B2 (en) 2004-11-16 2009-08-04 Kabushiki Kaisha Toshiba Silicon carbide high breakdown voltage semiconductor device
US7642205B2 (en) 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
US20070029573A1 (en) 2005-08-08 2007-02-08 Lin Cheng Vertical-channel junction field-effect transistors having buried gates and methods of making
JP2006080560A (ja) 2005-10-31 2006-03-23 Kansai Electric Power Co Inc:The 光結合パワー半導体素子
US7582917B2 (en) 2006-03-10 2009-09-01 Bae Systems Information And Electronic Systems Integration Inc. Monolithically integrated light-activated thyristor and method
US7274083B1 (en) 2006-05-02 2007-09-25 Semisouth Laboratories, Inc. Semiconductor device with surge current protection and method of making the same
US7821015B2 (en) 2006-06-19 2010-10-26 Semisouth Laboratories, Inc. Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4947218A (en) * 1987-11-03 1990-08-07 North Carolina State University P-N junction diodes in silicon carbide
US5135885A (en) * 1989-03-27 1992-08-04 Sharp Corporation Method of manufacturing silicon carbide fets
US20020149021A1 (en) * 2001-01-03 2002-10-17 Casady Jeffrey B. Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
US7009209B2 (en) 2001-01-03 2006-03-07 Mississippi State University Research And Technology Corporation (Rtc) Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications

Also Published As

Publication number Publication date
JP2009542005A (ja) 2009-11-26
KR20090033224A (ko) 2009-04-01
AU2007261054B2 (en) 2013-09-26
NZ572662A (en) 2012-02-24
US20110003456A1 (en) 2011-01-06
CA2654634A1 (en) 2007-12-27
US7821015B2 (en) 2010-10-26
US8592826B2 (en) 2013-11-26
AU2007261054A1 (en) 2007-12-27
CN102723360A (zh) 2012-10-10
EP2030243A1 (en) 2009-03-04
US20120199940A1 (en) 2012-08-09
WO2007149849A1 (en) 2007-12-27
JP5580045B2 (ja) 2014-08-27
US20070290212A1 (en) 2007-12-20
US8183124B2 (en) 2012-05-22
PH12012501605A1 (en) 2015-01-26

Similar Documents

Publication Publication Date Title
KR101418615B1 (ko) 반절연 에피텍시 상의 실리콘 탄화물 및 관련 와이드 밴드갭 트랜지스터들
US7009209B2 (en) Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
US20220149034A1 (en) Microelectronic device and method for making the same
CN103201840A (zh) 具有提高的缓冲击穿电压的hemt
KR20120032531A (ko) 이온주입 없이 ｖｊｆｅｔ와 ｂｊｔ를 제조하는 방법 및 그 장치
KR20110095207A (ko) 초접합된 트랜치 모스펫을 포함하는 반도체 장치들
CN108242468B (zh) 半导体装置及其制造方法
KR20050118162A (ko) 스트레인드 Ｓｉ/ＳｉＧｅ 을 위한 얕은 트렌치 분리구조물
CN101473442B (zh) 半绝缘外延的碳化硅及相关的宽带隙晶体管
US10665703B2 (en) Silicon carbide transistor
US20050217566A1 (en) Method for producing one or more monocrystalline layers, each with a different lattice structure, on one plane of a series of layers
US7233044B2 (en) MOS transistor and method for producing a MOS transistor structure
US8658500B2 (en) Single crystal U-MOS gates using microwave crystal regrowth
EP4498425A1 (en) Semiconductor electronic device integrating an electronic component based on heterostructure and having reduced mechanical stress
CN120018575B (zh) 一种集成芯片结构及其制作方法
EP4498424A1 (en) Manufacturing process of a semiconductor electronic device integrating different electronic components and semiconductor electronic device
JP2025023901A (ja) 異なる電子部品を集積する半導体電子デバイスの製造プロセス、及び半導体電子デバイス
JPH11177082A (ja) Ｍｉｓ型電界効果トランジスタおよびその製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20170705

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20170705

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000