KR101416876B1 - 반도체 장치 및 반도체 장치의 제조방법 - Google Patents

반도체 장치 및 반도체 장치의 제조방법 Download PDF

Info

Publication number
KR101416876B1
KR101416876B1 KR1020070109342A KR20070109342A KR101416876B1 KR 101416876 B1 KR101416876 B1 KR 101416876B1 KR 1020070109342 A KR1020070109342 A KR 1020070109342A KR 20070109342 A KR20070109342 A KR 20070109342A KR 101416876 B1 KR101416876 B1 KR 101416876B1
Authority
KR
South Korea
Prior art keywords
electrode
semiconductor
layer
film
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020070109342A
Other languages
English (en)
Korean (ko)
Other versions
KR20080044763A (ko
Inventor
하지메 토쿠나가
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20080044763A publication Critical patent/KR20080044763A/ko
Application granted granted Critical
Publication of KR101416876B1 publication Critical patent/KR101416876B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
KR1020070109342A 2006-11-17 2007-10-30 반도체 장치 및 반도체 장치의 제조방법 Expired - Fee Related KR101416876B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00310883 2006-11-17
JP2006310883 2006-11-17

Publications (2)

Publication Number Publication Date
KR20080044763A KR20080044763A (ko) 2008-05-21
KR101416876B1 true KR101416876B1 (ko) 2014-07-08

Family

ID=39416072

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070109342A Expired - Fee Related KR101416876B1 (ko) 2006-11-17 2007-10-30 반도체 장치 및 반도체 장치의 제조방법

Country Status (3)

Country Link
US (1) US8759946B2 (enExample)
JP (1) JP5376706B2 (enExample)
KR (1) KR101416876B1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7872934B2 (en) * 2007-12-14 2011-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for writing data into memory
JP5371400B2 (ja) * 2007-12-14 2013-12-18 株式会社半導体エネルギー研究所 メモリ及び半導体装置
JP5358324B2 (ja) 2008-07-10 2013-12-04 株式会社半導体エネルギー研究所 電子ペーパー
WO2011010702A1 (ja) * 2009-07-22 2011-01-27 株式会社村田製作所 アンチヒューズ素子
JP5641840B2 (ja) * 2009-10-01 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
SG10201500220TA (en) * 2010-01-15 2015-03-30 Semiconductor Energy Lab Semiconductor device and method for driving the same
CN102754163B (zh) * 2010-02-19 2015-11-25 株式会社半导体能源研究所 半导体器件
US8634228B2 (en) * 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
JP5731369B2 (ja) 2010-12-28 2015-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2012090799A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5975635B2 (ja) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8802493B2 (en) 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9991392B2 (en) * 2013-12-03 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06216254A (ja) * 1992-12-17 1994-08-05 American Teleph & Telegr Co <Att> 自己整合垂直アンチフューズ
US5576576A (en) * 1992-11-04 1996-11-19 Actel Corporation Above via metal-to-metal antifuse
US20030146452A1 (en) 2001-09-07 2003-08-07 Chien Chiang Using selective deposition to form phase-change memory cells
JP2006310799A (ja) 2005-03-28 2006-11-09 Semiconductor Energy Lab Co Ltd メモリ装置およびその作製方法

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5644198A (en) 1979-09-14 1981-04-23 Fujitsu Ltd Semiconductor memory device
US4818082A (en) 1988-05-27 1989-04-04 Eastman Kodak Company Compact wide-angle close-focus SLR zoom lens
US5136573A (en) * 1988-06-30 1992-08-04 Kabushiki Kaisha Toshiba Information recording apparatus and method
US5206665A (en) 1989-08-10 1993-04-27 Canon Kabushiki Kaisha Recording medium, method for preparing the same, recording and reproducing device, and recording, reproducing and erasing method by use of such recording medium
US5989943A (en) 1989-09-07 1999-11-23 Quicklogic Corporation Method for fabrication of programmable interconnect structure
JP2913768B2 (ja) 1990-05-23 1999-06-28 日本電気株式会社 半導体装置
US5625220A (en) * 1991-02-19 1997-04-29 Texas Instruments Incorporated Sublithographic antifuse
JP2794348B2 (ja) 1991-06-21 1998-09-03 キヤノン株式会社 記録媒体、その製造方法、情報処理装置
JPH04373147A (ja) 1991-06-21 1992-12-25 Nippon Steel Corp 半導体装置のヒューズ構造
US5126290A (en) * 1991-09-11 1992-06-30 Micron Technology, Inc. Method of making memory devices utilizing one-sided ozone teos spacers
US5233206A (en) * 1991-11-13 1993-08-03 Micron Technology, Inc. Double digitlines for multiple programming of prom applications and other anti-fuse circuit element applications
JP3170101B2 (ja) 1993-04-15 2001-05-28 株式会社東芝 半導体装置及びその製造方法
JP2789293B2 (ja) 1993-07-14 1998-08-20 株式会社半導体エネルギー研究所 半導体装置作製方法
US5363329A (en) * 1993-11-10 1994-11-08 Eugeniy Troyan Semiconductor memory device for use in an electrically alterable read-only memory
JP3501416B2 (ja) 1994-04-28 2004-03-02 忠弘 大見 半導体装置
US5422504A (en) * 1994-05-02 1995-06-06 Motorola Inc. EEPROM memory device having a sidewall spacer floating gate electrode and process
JP3312083B2 (ja) 1994-06-13 2002-08-05 株式会社半導体エネルギー研究所 表示装置
GB9416899D0 (en) 1994-08-20 1994-10-12 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin-film circuitry
JP3226726B2 (ja) 1994-09-06 2001-11-05 株式会社東芝 アンチフューズ素子及びその製造方法
US5663591A (en) * 1995-02-14 1997-09-02 Crosspoint Solutions, Inc. Antifuse with double via, spacer-defined contact
US5869843A (en) * 1995-06-07 1999-02-09 Micron Technology, Inc. Memory array having a multi-state element and method for forming such array or cells thereof
EP0821826B1 (en) 1996-02-16 2003-07-23 Koninklijke Philips Electronics N.V. Write-once read-many electrical memory element of a conjugated polymer or oligomer
US5814527A (en) * 1996-07-22 1998-09-29 Micron Technology, Inc. Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
US6069064A (en) 1996-08-26 2000-05-30 Micron Technology, Inc. Method for forming a junctionless antifuse
US5952671A (en) * 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6288437B1 (en) 1999-02-26 2001-09-11 Micron Technology, Inc. Antifuse structures methods and applications
US6563156B2 (en) * 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same
DE10045192A1 (de) 2000-09-13 2002-04-04 Siemens Ag Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers
US6498056B1 (en) 2000-10-31 2002-12-24 International Business Machines Corporation Apparatus and method for antifuse with electrostatic assist
EP1344223A4 (en) 2000-10-31 2005-05-25 Univ California BISTABLE ORGANIC DEVICE AND ORGANIC MEMORY CELLS
US7087975B2 (en) 2000-12-28 2006-08-08 Infineon Technologies Ag Area efficient stacking of antifuses in semiconductor device
US8415208B2 (en) * 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
US6465282B1 (en) 2001-09-28 2002-10-15 Infineon Technologies Ag Method of forming a self-aligned antifuse link
US7196422B2 (en) 2001-12-14 2007-03-27 Intel Corporation Low-dielectric constant structure with a multilayer stack of thin films with pores
JP2003243631A (ja) 2002-02-18 2003-08-29 Mitsubishi Electric Corp 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム
US6943065B2 (en) 2002-03-25 2005-09-13 Micron Technology Inc. Scalable high performance antifuse structure and process
JP3940014B2 (ja) 2002-03-29 2007-07-04 富士通株式会社 半導体集積回路、無線タグ、および非接触型ｉｃカード
US6828685B2 (en) 2002-06-14 2004-12-07 Hewlett-Packard Development Company, L.P. Memory device having a semiconducting polymer film
JP2004128471A (ja) 2002-08-07 2004-04-22 Canon Inc 不揮発メモリ装置
US6864503B2 (en) * 2002-08-09 2005-03-08 Macronix International Co., Ltd. Spacer chalcogenide memory method and device
JP4373085B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法
JP2004209894A (ja) * 2003-01-07 2004-07-29 Victor Co Of Japan Ltd 光情報記録媒体
US7973313B2 (en) 2003-02-24 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
US6750530B1 (en) 2003-06-03 2004-06-15 International Business Machines Corporation Semiconductor antifuse with heating element
US20050006640A1 (en) 2003-06-26 2005-01-13 Jackson Warren B. Polymer-based memory element
KR100564608B1 (ko) * 2004-01-29 2006-03-28 삼성전자주식회사 상변화 메모리 소자
US7699232B2 (en) 2004-02-06 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100615212B1 (ko) * 2004-03-08 2006-08-25 삼성에스디아이 주식회사 평판 표시 장치
US7630233B2 (en) 2004-04-02 2009-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
WO2005119779A1 (en) 2004-06-03 2005-12-15 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method of the same
WO2006028231A1 (en) 2004-09-10 2006-03-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7795617B2 (en) 2004-10-29 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, paper money, valuable securities, passport, electronic device, bag, and clothes
US7449372B2 (en) * 2004-12-17 2008-11-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of substrate having conductive layer and manufacturing method of semiconductor device
US7768014B2 (en) 2005-01-31 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method thereof
US8193606B2 (en) 2005-02-28 2012-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a memory element
JP5046525B2 (ja) * 2005-02-28 2012-10-10 株式会社半導体エネルギー研究所 半導体装置
US8030643B2 (en) 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
US7358590B2 (en) 2005-03-31 2008-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US7791066B2 (en) 2005-05-20 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof and method for writing memory element
US7687327B2 (en) 2005-07-08 2010-03-30 Kovio, Inc, Methods for manufacturing RFID tags and structures formed therefrom
CN101523611B (zh) 2006-10-04 2012-07-04 株式会社半导体能源研究所 半导体器件及其制造方法
WO2008088599A2 (en) * 2006-10-19 2008-07-24 Boise State University Forced ion migration for chalcogenide phase change memory device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576576A (en) * 1992-11-04 1996-11-19 Actel Corporation Above via metal-to-metal antifuse
JPH06216254A (ja) * 1992-12-17 1994-08-05 American Teleph & Telegr Co <Att> 自己整合垂直アンチフューズ
US20030146452A1 (en) 2001-09-07 2003-08-07 Chien Chiang Using selective deposition to form phase-change memory cells
JP2006310799A (ja) 2005-03-28 2006-11-09 Semiconductor Energy Lab Co Ltd メモリ装置およびその作製方法

Also Published As

Publication number Publication date
US8759946B2 (en) 2014-06-24
JP2008147640A (ja) 2008-06-26
KR20080044763A (ko) 2008-05-21
US20080116500A1 (en) 2008-05-22
JP5376706B2 (ja) 2013-12-25

Similar Documents

Publication Publication Date Title
KR101416876B1 (ko) 반도체 장치 및 반도체 장치의 제조방법
US7482248B2 (en) Manufacturing method of semiconductor device
KR101406770B1 (ko) 반도체 디바이스 및 이의 제작 방법
US8790994B2 (en) Wireless chip and manufacturing method thereof
US7767516B2 (en) Semiconductor device, manufacturing method thereof, and manufacturing method of antenna
US7683838B2 (en) Semiconductor device
US7736964B2 (en) Semiconductor device, and method for manufacturing the same
KR101443176B1 (ko) 반도체 장치 및 그것의 제작 방법
US20110104859A1 (en) Manufacturing method of semiconductor device
US8957423B2 (en) Semiconductor device
JP2008112988A (ja) 半導体装置およびその作製方法
JP5089037B2 (ja) 半導体装置の作製方法
US7745827B2 (en) Memory device
JP4749102B2 (ja) 半導体装置の作製方法
JP2006093678A (ja) 無線チップ及びその作製方法
JP4845623B2 (ja) 半導体装置の作製方法
JP2007006464A (ja) 半導体装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PE0801 Dismissal of amendment

St.27 status event code: A-2-2-P10-P12-nap-PE0801

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20170616

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20190617

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20200703

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20200703

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000