KR101405863B1 - 스핀-전달 토크 메모리 자가-참조 판독 방법 - Google Patents

스핀-전달 토크 메모리 자가-참조 판독 방법 Download PDF

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Publication number
KR101405863B1
KR101405863B1 KR1020117021976A KR20117021976A KR101405863B1 KR 101405863 B1 KR101405863 B1 KR 101405863B1 KR 1020117021976 A KR1020117021976 A KR 1020117021976A KR 20117021976 A KR20117021976 A KR 20117021976A KR 101405863 B1 KR101405863 B1 KR 101405863B1
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South Korea
Prior art keywords
tunnel junction
data cell
magnetic tunnel
resistance state
junction data
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Korean (ko)
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KR20110139696A (ko
Inventor
유안키 쳉
이란 첸
시아오빈 왕
쳉 가오
디미타르 디미트로브
웬총 추
용 루
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시게이트 테크놀로지 엘엘씨
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020117021976A 2009-02-20 2010-02-22 스핀-전달 토크 메모리 자가-참조 판독 방법 Expired - Fee Related KR101405863B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/390,006 2009-02-20
US12/390,006 US7876604B2 (en) 2008-11-05 2009-02-20 Stram with self-reference read scheme
PCT/US2010/024928 WO2010096768A1 (en) 2009-02-20 2010-02-22 Spin-transfer torque memory self-reference read method

Publications (2)

Publication Number Publication Date
KR20110139696A KR20110139696A (ko) 2011-12-29
KR101405863B1 true KR101405863B1 (ko) 2014-06-12

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ID=42173868

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KR1020117021976A Expired - Fee Related KR101405863B1 (ko) 2009-02-20 2010-02-22 스핀-전달 토크 메모리 자가-참조 판독 방법

Country Status (6)

Country Link
US (2) US7876604B2 (enExample)
EP (1) EP2399259B1 (enExample)
JP (1) JP2012518867A (enExample)
KR (1) KR101405863B1 (enExample)
CN (1) CN102326204B (enExample)
WO (1) WO2010096768A1 (enExample)

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US7826255B2 (en) * 2008-09-15 2010-11-02 Seagate Technology Llc Variable write and read methods for resistive random access memory
US7859891B2 (en) * 2008-09-30 2010-12-28 Seagate Technology Llc Static source plane in stram
US7876604B2 (en) * 2008-11-05 2011-01-25 Seagate Technology Llc Stram with self-reference read scheme
US9183911B2 (en) 2011-11-17 2015-11-10 Everspin Technologies, Inc. Hybrid read scheme for spin torque MRAM
US8493776B1 (en) * 2012-02-02 2013-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. MRAM with current-based self-referenced read operations
WO2013147728A1 (en) * 2012-03-25 2013-10-03 Intel Corporation Methods and systems to read a magnetic tunnel junction (mtj) based memory cell based on a pulsed read current
US8923041B2 (en) 2012-04-11 2014-12-30 Everspin Technologies, Inc. Self-referenced sense amplifier for spin torque MRAM
US9047944B2 (en) 2013-04-24 2015-06-02 Micron Technology, Inc. Resistance variable memory sensing
CN103268916B (zh) * 2013-04-25 2015-06-10 中国科学院宁波材料技术与工程研究所 一种磁性隧道结的制备方法
KR20140137024A (ko) * 2013-05-16 2014-12-02 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 데이터 처리 방법
US9627024B2 (en) 2013-09-19 2017-04-18 University of Pittsburgh—of the Commonwealth System of Higher Education Magnetic-assisted nondestructive self-reference sensing method for spin-transfer torque random access memory
EP3062215B1 (en) * 2015-02-24 2018-04-04 Crocus Technology S.A. Mram-based programmable magnetic device for generating random numbers
JP2018163713A (ja) * 2017-03-24 2018-10-18 東芝メモリ株式会社 メモリデバイス及びその制御方法

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KR20040110509A (ko) * 2003-06-19 2004-12-31 삼성전자주식회사 자기 메모리의 읽기 방법
EP1553601A2 (en) 2003-12-12 2005-07-13 Maglabs, Inc. Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture
JP2006127672A (ja) * 2004-10-29 2006-05-18 Toshiba Corp 半導体メモリの読み出し回路
WO2007111318A1 (ja) * 2006-03-28 2007-10-04 Nec Corporation 磁気ランダムアクセスメモリ及びその動作方法

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DE19950581A1 (de) 1999-10-20 2001-04-26 Infineon Technologies Ag Anordnung zur Selbstreferenzierung von ferroelektrischen Speicherzellen
US6349056B1 (en) 2000-12-28 2002-02-19 Sandisk Corporation Method and structure for efficient data verification operation for non-volatile memories
JP4679036B2 (ja) * 2002-09-12 2011-04-27 ルネサスエレクトロニクス株式会社 記憶装置
US6870760B2 (en) 2003-02-24 2005-03-22 Applied Spintronics Technology, Inc. Method and system for performing readout utilizing a self reference scheme
US7187576B2 (en) 2004-07-19 2007-03-06 Infineon Technologies Ag Read out scheme for several bits in a single MRAM soft layer
JP5160724B2 (ja) * 2004-09-06 2013-03-13 ソニー株式会社 メモリ
KR100669363B1 (ko) 2004-10-26 2007-01-16 삼성전자주식회사 메모리 장치의 읽기 방법
JP4261461B2 (ja) * 2004-11-05 2009-04-30 株式会社東芝 半導体集積回路装置、及びそれを用いた不揮発性メモリシステム
JP4543901B2 (ja) * 2004-11-26 2010-09-15 ソニー株式会社 メモリ
JP4284279B2 (ja) * 2005-01-04 2009-06-24 株式会社東芝 磁気記録装置の書き込み及び読み出し方法
US7102946B2 (en) 2005-02-09 2006-09-05 International Business Machines Corporation Local bit select circuit with slow read recovery scheme
JP2006294179A (ja) 2005-04-14 2006-10-26 Renesas Technology Corp 不揮発性記憶装置
US7289356B2 (en) 2005-06-08 2007-10-30 Grandis, Inc. Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein
US7224601B2 (en) 2005-08-25 2007-05-29 Grandis Inc. Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
US7272035B1 (en) 2005-08-31 2007-09-18 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
US7272034B1 (en) 2005-08-31 2007-09-18 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
US20090103215A1 (en) * 2005-10-21 2009-04-23 Freitag James M Magnetoresistive (mr) elements having improved hard bias seed layers
US7286395B2 (en) * 2005-10-27 2007-10-23 Grandis, Inc. Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
US7187577B1 (en) 2005-11-23 2007-03-06 Grandis, Inc. Method and system for providing current balanced writing for memory cells and magnetic devices
US7515457B2 (en) 2006-02-24 2009-04-07 Grandis, Inc. Current driven memory cells having enhanced current and enhanced current symmetry
US7564110B2 (en) * 2006-04-19 2009-07-21 Hitachi Global Storage Technologies Netherlands B.V. Electrical lapping guides made from tunneling magnetoresistive (TMR) material
US7345912B2 (en) 2006-06-01 2008-03-18 Grandis, Inc. Method and system for providing a magnetic memory structure utilizing spin transfer
US7379327B2 (en) 2006-06-26 2008-05-27 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
US7502249B1 (en) 2006-07-17 2009-03-10 Grandis, Inc. Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
US7764537B2 (en) * 2007-04-05 2010-07-27 Qualcomm Incorporated Spin transfer torque magnetoresistive random access memory and design methods
WO2008154519A1 (en) 2007-06-12 2008-12-18 Grandis, Inc. Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled
US7742328B2 (en) 2007-06-15 2010-06-22 Grandis, Inc. Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors
US7764536B2 (en) 2007-08-07 2010-07-27 Grandis, Inc. Method and system for providing a sense amplifier and drive circuit for spin transfer torque magnetic random access memory
US20090185410A1 (en) 2008-01-22 2009-07-23 Grandis, Inc. Method and system for providing spin transfer tunneling magnetic memories utilizing unidirectional polarity selection devices
US7876604B2 (en) * 2008-11-05 2011-01-25 Seagate Technology Llc Stram with self-reference read scheme

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040110509A (ko) * 2003-06-19 2004-12-31 삼성전자주식회사 자기 메모리의 읽기 방법
EP1553601A2 (en) 2003-12-12 2005-07-13 Maglabs, Inc. Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture
JP2006127672A (ja) * 2004-10-29 2006-05-18 Toshiba Corp 半導体メモリの読み出し回路
WO2007111318A1 (ja) * 2006-03-28 2007-10-04 Nec Corporation 磁気ランダムアクセスメモリ及びその動作方法

Also Published As

Publication number Publication date
CN102326204A (zh) 2012-01-18
US8194444B2 (en) 2012-06-05
EP2399259A1 (en) 2011-12-28
US7876604B2 (en) 2011-01-25
JP2012518867A (ja) 2012-08-16
KR20110139696A (ko) 2011-12-29
WO2010096768A1 (en) 2010-08-26
US20100110784A1 (en) 2010-05-06
EP2399259B1 (en) 2013-09-18
CN102326204B (zh) 2014-04-02
US20110085373A1 (en) 2011-04-14

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