CN102326204B - 自旋转移转矩存储器自基准读取方法 - Google Patents

自旋转移转矩存储器自基准读取方法 Download PDF

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Publication number
CN102326204B
CN102326204B CN201080008973.XA CN201080008973A CN102326204B CN 102326204 B CN102326204 B CN 102326204B CN 201080008973 A CN201080008973 A CN 201080008973A CN 102326204 B CN102326204 B CN 102326204B
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China
Prior art keywords
resistance state
data cell
mtj
voltage
state
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CN201080008973.XA
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Chinese (zh)
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CN102326204A (zh
Inventor
Y·郑
Y·陈
王小斌
Z·高
D·季米特洛夫
朱文忠
Y·陆
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Seagate Technology LLC
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Seagate Technology LLC
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN201080008973.XA 2009-02-20 2010-02-22 自旋转移转矩存储器自基准读取方法 Expired - Fee Related CN102326204B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/390,006 2009-02-20
US12/390,006 US7876604B2 (en) 2008-11-05 2009-02-20 Stram with self-reference read scheme
PCT/US2010/024928 WO2010096768A1 (en) 2009-02-20 2010-02-22 Spin-transfer torque memory self-reference read method

Publications (2)

Publication Number Publication Date
CN102326204A CN102326204A (zh) 2012-01-18
CN102326204B true CN102326204B (zh) 2014-04-02

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Country Link
US (2) US7876604B2 (enExample)
EP (1) EP2399259B1 (enExample)
JP (1) JP2012518867A (enExample)
KR (1) KR101405863B1 (enExample)
CN (1) CN102326204B (enExample)
WO (1) WO2010096768A1 (enExample)

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US7859891B2 (en) * 2008-09-30 2010-12-28 Seagate Technology Llc Static source plane in stram
US7876604B2 (en) * 2008-11-05 2011-01-25 Seagate Technology Llc Stram with self-reference read scheme
US9183911B2 (en) 2011-11-17 2015-11-10 Everspin Technologies, Inc. Hybrid read scheme for spin torque MRAM
US8493776B1 (en) * 2012-02-02 2013-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. MRAM with current-based self-referenced read operations
WO2013147728A1 (en) * 2012-03-25 2013-10-03 Intel Corporation Methods and systems to read a magnetic tunnel junction (mtj) based memory cell based on a pulsed read current
US8923041B2 (en) 2012-04-11 2014-12-30 Everspin Technologies, Inc. Self-referenced sense amplifier for spin torque MRAM
US9047944B2 (en) 2013-04-24 2015-06-02 Micron Technology, Inc. Resistance variable memory sensing
CN103268916B (zh) * 2013-04-25 2015-06-10 中国科学院宁波材料技术与工程研究所 一种磁性隧道结的制备方法
KR20140137024A (ko) * 2013-05-16 2014-12-02 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 데이터 처리 방법
US9627024B2 (en) 2013-09-19 2017-04-18 University of Pittsburgh—of the Commonwealth System of Higher Education Magnetic-assisted nondestructive self-reference sensing method for spin-transfer torque random access memory
EP3062215B1 (en) * 2015-02-24 2018-04-04 Crocus Technology S.A. Mram-based programmable magnetic device for generating random numbers
JP2018163713A (ja) * 2017-03-24 2018-10-18 東芝メモリ株式会社 メモリデバイス及びその制御方法

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US20060092734A1 (en) * 2004-10-29 2006-05-04 Kenji Tsuchida Read circuit of semiconductor memory
US20080247222A1 (en) * 2007-04-05 2008-10-09 Qualcomm Incorporated Spin Transfer Torque Magnetoresistive Random Access Memory and Design Methods
CN101297371A (zh) * 2005-10-27 2008-10-29 弘世科技公司 具有改进的读写容限的电流驱动切换磁性存储单元及采用该单元的磁性存储器

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US6349056B1 (en) 2000-12-28 2002-02-19 Sandisk Corporation Method and structure for efficient data verification operation for non-volatile memories
JP4679036B2 (ja) * 2002-09-12 2011-04-27 ルネサスエレクトロニクス株式会社 記憶装置
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JP4261461B2 (ja) * 2004-11-05 2009-04-30 株式会社東芝 半導体集積回路装置、及びそれを用いた不揮発性メモリシステム
JP4543901B2 (ja) * 2004-11-26 2010-09-15 ソニー株式会社 メモリ
JP4284279B2 (ja) * 2005-01-04 2009-06-24 株式会社東芝 磁気記録装置の書き込み及び読み出し方法
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JPWO2007111318A1 (ja) * 2006-03-28 2009-08-13 日本電気株式会社 磁気ランダムアクセスメモリ及びその動作方法
US7564110B2 (en) * 2006-04-19 2009-07-21 Hitachi Global Storage Technologies Netherlands B.V. Electrical lapping guides made from tunneling magnetoresistive (TMR) material
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US7379327B2 (en) 2006-06-26 2008-05-27 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
US7502249B1 (en) 2006-07-17 2009-03-10 Grandis, Inc. Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
WO2008154519A1 (en) 2007-06-12 2008-12-18 Grandis, Inc. Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled
US7742328B2 (en) 2007-06-15 2010-06-22 Grandis, Inc. Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors
US7764536B2 (en) 2007-08-07 2010-07-27 Grandis, Inc. Method and system for providing a sense amplifier and drive circuit for spin transfer torque magnetic random access memory
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US7876604B2 (en) * 2008-11-05 2011-01-25 Seagate Technology Llc Stram with self-reference read scheme

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1553601A2 (en) * 2003-12-12 2005-07-13 Maglabs, Inc. Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture
US20060092734A1 (en) * 2004-10-29 2006-05-04 Kenji Tsuchida Read circuit of semiconductor memory
CN101297371A (zh) * 2005-10-27 2008-10-29 弘世科技公司 具有改进的读写容限的电流驱动切换磁性存储单元及采用该单元的磁性存储器
US20080247222A1 (en) * 2007-04-05 2008-10-09 Qualcomm Incorporated Spin Transfer Torque Magnetoresistive Random Access Memory and Design Methods

Also Published As

Publication number Publication date
CN102326204A (zh) 2012-01-18
US8194444B2 (en) 2012-06-05
KR101405863B1 (ko) 2014-06-12
EP2399259A1 (en) 2011-12-28
US7876604B2 (en) 2011-01-25
JP2012518867A (ja) 2012-08-16
KR20110139696A (ko) 2011-12-29
WO2010096768A1 (en) 2010-08-26
US20100110784A1 (en) 2010-05-06
EP2399259B1 (en) 2013-09-18
US20110085373A1 (en) 2011-04-14

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