JP2012518867A - スピン転移トルクメモリの自己参照読出方法 - Google Patents

スピン転移トルクメモリの自己参照読出方法 Download PDF

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Publication number
JP2012518867A
JP2012518867A JP2011551276A JP2011551276A JP2012518867A JP 2012518867 A JP2012518867 A JP 2012518867A JP 2011551276 A JP2011551276 A JP 2011551276A JP 2011551276 A JP2011551276 A JP 2011551276A JP 2012518867 A JP2012518867 A JP 2012518867A
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Japan
Prior art keywords
resistance state
tunnel junction
magnetic tunnel
data cell
junction data
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JP2011551276A
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English (en)
Japanese (ja)
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JP2012518867A5 (enExample
Inventor
チョン，イェンカイ
チェン，イラン
ワン，シャオビン
ガオ，チョン
ディミトロフ，ディミタール
チュー，ウェンチョン
ルー，ヨン
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Seagate Technology LLC
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Seagate Technology LLC
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Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of JP2012518867A publication Critical patent/JP2012518867A/ja
Publication of JP2012518867A5 publication Critical patent/JP2012518867A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2011551276A 2009-02-20 2010-02-22 スピン転移トルクメモリの自己参照読出方法 Pending JP2012518867A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/390,006 2009-02-20
US12/390,006 US7876604B2 (en) 2008-11-05 2009-02-20 Stram with self-reference read scheme
PCT/US2010/024928 WO2010096768A1 (en) 2009-02-20 2010-02-22 Spin-transfer torque memory self-reference read method

Publications (2)

Publication Number Publication Date
JP2012518867A true JP2012518867A (ja) 2012-08-16
JP2012518867A5 JP2012518867A5 (enExample) 2013-04-11

Family

ID=42173868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011551276A Pending JP2012518867A (ja) 2009-02-20 2010-02-22 スピン転移トルクメモリの自己参照読出方法

Country Status (6)

Country Link
US (2) US7876604B2 (enExample)
EP (1) EP2399259B1 (enExample)
JP (1) JP2012518867A (enExample)
KR (1) KR101405863B1 (enExample)
CN (1) CN102326204B (enExample)
WO (1) WO2010096768A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016522956A (ja) * 2013-04-24 2016-08-04 マイクロン テクノロジー， インク． 抵抗可変メモリセンシング

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US7826255B2 (en) * 2008-09-15 2010-11-02 Seagate Technology Llc Variable write and read methods for resistive random access memory
US7859891B2 (en) * 2008-09-30 2010-12-28 Seagate Technology Llc Static source plane in stram
US7876604B2 (en) * 2008-11-05 2011-01-25 Seagate Technology Llc Stram with self-reference read scheme
US9183911B2 (en) 2011-11-17 2015-11-10 Everspin Technologies, Inc. Hybrid read scheme for spin torque MRAM
US8493776B1 (en) * 2012-02-02 2013-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. MRAM with current-based self-referenced read operations
WO2013147728A1 (en) * 2012-03-25 2013-10-03 Intel Corporation Methods and systems to read a magnetic tunnel junction (mtj) based memory cell based on a pulsed read current
US8923041B2 (en) 2012-04-11 2014-12-30 Everspin Technologies, Inc. Self-referenced sense amplifier for spin torque MRAM
CN103268916B (zh) * 2013-04-25 2015-06-10 中国科学院宁波材料技术与工程研究所 一种磁性隧道结的制备方法
KR20140137024A (ko) * 2013-05-16 2014-12-02 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 데이터 처리 방법
US9627024B2 (en) 2013-09-19 2017-04-18 University of Pittsburgh—of the Commonwealth System of Higher Education Magnetic-assisted nondestructive self-reference sensing method for spin-transfer torque random access memory
EP3062215B1 (en) * 2015-02-24 2018-04-04 Crocus Technology S.A. Mram-based programmable magnetic device for generating random numbers
JP2018163713A (ja) * 2017-03-24 2018-10-18 東芝メモリ株式会社 メモリデバイス及びその制御方法

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WO2007111318A1 (ja) * 2006-03-28 2007-10-04 Nec Corporation 磁気ランダムアクセスメモリ及びその動作方法

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US6349056B1 (en) 2000-12-28 2002-02-19 Sandisk Corporation Method and structure for efficient data verification operation for non-volatile memories
JP4679036B2 (ja) * 2002-09-12 2011-04-27 ルネサスエレクトロニクス株式会社 記憶装置
US6870760B2 (en) 2003-02-24 2005-03-22 Applied Spintronics Technology, Inc. Method and system for performing readout utilizing a self reference scheme
KR100560661B1 (ko) 2003-06-19 2006-03-16 삼성전자주식회사 자기 메모리의 읽기 방법
US6925000B2 (en) 2003-12-12 2005-08-02 Maglabs, Inc. Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture
US7187576B2 (en) 2004-07-19 2007-03-06 Infineon Technologies Ag Read out scheme for several bits in a single MRAM soft layer
JP5160724B2 (ja) * 2004-09-06 2013-03-13 ソニー株式会社 メモリ
KR100669363B1 (ko) 2004-10-26 2007-01-16 삼성전자주식회사 메모리 장치의 읽기 방법
JP3959417B2 (ja) 2004-10-29 2007-08-15 株式会社東芝 半導体メモリの読み出し回路
JP4261461B2 (ja) * 2004-11-05 2009-04-30 株式会社東芝 半導体集積回路装置、及びそれを用いた不揮発性メモリシステム
JP4543901B2 (ja) * 2004-11-26 2010-09-15 ソニー株式会社 メモリ
US7102946B2 (en) 2005-02-09 2006-09-05 International Business Machines Corporation Local bit select circuit with slow read recovery scheme
JP2006294179A (ja) 2005-04-14 2006-10-26 Renesas Technology Corp 不揮発性記憶装置
US7289356B2 (en) 2005-06-08 2007-10-30 Grandis, Inc. Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein
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US7379327B2 (en) 2006-06-26 2008-05-27 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
US7502249B1 (en) 2006-07-17 2009-03-10 Grandis, Inc. Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
US7764537B2 (en) * 2007-04-05 2010-07-27 Qualcomm Incorporated Spin transfer torque magnetoresistive random access memory and design methods
WO2008154519A1 (en) 2007-06-12 2008-12-18 Grandis, Inc. Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled
US7742328B2 (en) 2007-06-15 2010-06-22 Grandis, Inc. Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors
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US20090185410A1 (en) 2008-01-22 2009-07-23 Grandis, Inc. Method and system for providing spin transfer tunneling magnetic memories utilizing unidirectional polarity selection devices
US7876604B2 (en) * 2008-11-05 2011-01-25 Seagate Technology Llc Stram with self-reference read scheme

Patent Citations (2)

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JP2006190364A (ja) * 2005-01-04 2006-07-20 Toshiba Corp 磁気記録装置の書き込み及び読み出し方法
WO2007111318A1 (ja) * 2006-03-28 2007-10-04 Nec Corporation 磁気ランダムアクセスメモリ及びその動作方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016522956A (ja) * 2013-04-24 2016-08-04 マイクロン テクノロジー， インク． 抵抗可変メモリセンシング
US9437294B2 (en) 2013-04-24 2016-09-06 Micron Technology, Inc. Resistance variable memory sensing

Also Published As

Publication number Publication date
CN102326204A (zh) 2012-01-18
US8194444B2 (en) 2012-06-05
KR101405863B1 (ko) 2014-06-12
EP2399259A1 (en) 2011-12-28
US7876604B2 (en) 2011-01-25
KR20110139696A (ko) 2011-12-29
WO2010096768A1 (en) 2010-08-26
US20100110784A1 (en) 2010-05-06
EP2399259B1 (en) 2013-09-18
CN102326204B (zh) 2014-04-02
US20110085373A1 (en) 2011-04-14

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