KR101385901B1 - 레지스트 패턴 계산 방법 및 계산 프로그램 저장 매체 - Google Patents

레지스트 패턴 계산 방법 및 계산 프로그램 저장 매체 Download PDF

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KR101385901B1
KR101385901B1 KR1020110103538A KR20110103538A KR101385901B1 KR 101385901 B1 KR101385901 B1 KR 101385901B1 KR 1020110103538 A KR1020110103538 A KR 1020110103538A KR 20110103538 A KR20110103538 A KR 20110103538A KR 101385901 B1 KR101385901 B1 KR 101385901B1
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South Korea
Prior art keywords
light intensity
intensity distribution
pattern
resist
calculating
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KR1020110103538A
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KR20120040658A (ko
Inventor
료 나까야마
고오이찌로오 쯔지따
고지 미까미
히로유끼 이시이
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F9/00—Arrangements for program control, e.g. control units
    • G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
    • G06F9/44—Arrangements for executing specific programs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Software Systems (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Databases & Information Systems (AREA)
  • Computational Mathematics (AREA)
  • Algebra (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020110103538A 2010-10-19 2011-10-11 레지스트 패턴 계산 방법 및 계산 프로그램 저장 매체 Expired - Fee Related KR101385901B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-234914 2010-10-19
JP2010234914A JP5539148B2 (ja) 2010-10-19 2010-10-19 レジストパターンの算出方法及び算出プログラム

Publications (2)

Publication Number Publication Date
KR20120040658A KR20120040658A (ko) 2012-04-27
KR101385901B1 true KR101385901B1 (ko) 2014-04-15

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KR1020110103538A Expired - Fee Related KR101385901B1 (ko) 2010-10-19 2011-10-11 레지스트 패턴 계산 방법 및 계산 프로그램 저장 매체

Country Status (5)

Country Link
US (1) US9448495B2 (https=)
JP (1) JP5539148B2 (https=)
KR (1) KR101385901B1 (https=)
CN (1) CN102455594B (https=)
TW (1) TWI454939B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102687968B1 (ko) 2018-11-06 2024-07-25 삼성전자주식회사 반도체 소자의 제조 방법
CN114330127A (zh) * 2021-12-29 2022-04-12 深圳晶源信息技术有限公司 一种提高光刻胶模型精度的方法
CN117008428B (zh) * 2023-09-26 2024-01-26 全芯智造技术有限公司 光刻仿真方法、设备和介质

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004264102A (ja) 2003-02-28 2004-09-24 Matsushita Electric Ind Co Ltd Ｓｅｍシュリンク量測定方法および測長ｓｅｍ装置
JP2006156864A (ja) 2004-12-01 2006-06-15 Sony Corp レジストパターン・ライン幅の算出方法、マスクパターン・ライン幅の補正方法、光近接効果補正方法、露光用マスクの作製方法、露光用マスクを作製するための電子線描画方法、露光方法、及び、半導体装置の製造方法
KR20080079623A (ko) * 2007-02-27 2008-09-01 캐논 가부시끼가이샤 레지스트 패턴 형상 예측 방법, 레지스트 패턴 형상을예측하는 프로그램을 기억한 컴퓨터 판독가능한 기록 매체및 레지스트 패턴 형상을 예측하는 컴퓨터

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JP3297791B2 (ja) * 1994-11-16 2002-07-02 ソニー株式会社 露光方法およびレジストパターン算出方法
JP3331822B2 (ja) * 1995-07-17 2002-10-07 ソニー株式会社 マスクパターン補正方法とそれを用いたマスク、露光方法および半導体装置
JPH11204397A (ja) * 1998-01-08 1999-07-30 Mitsubishi Electric Corp パターン決定方法および露光装置に用いられるアパーチャ
JP3223965B2 (ja) * 1998-07-10 2001-10-29 日本電気株式会社 化学増幅型レジスト形状の計算方法及び記録媒体
JP2000077292A (ja) * 1998-08-27 2000-03-14 Toshiba Corp レジストパターンの形成方法
JP3686367B2 (ja) * 2001-11-15 2005-08-24 株式会社ルネサステクノロジ パターン形成方法および半導体装置の製造方法
JP2004228228A (ja) * 2003-01-21 2004-08-12 Toshiba Corp 形状シミュレーション方法、形状シミュレーションプログラム及びマスクパターン作成方法
JP4317186B2 (ja) * 2003-05-30 2009-08-19 富士通マイクロエレクトロニクス株式会社 ローカルフレア補正
EP1688795A3 (en) * 2005-01-28 2007-12-12 ASML MaskTools B.V. Method, computer program and apparatus for improving calibration of resist models used in critical dimension calculation
JP4413825B2 (ja) * 2005-07-13 2010-02-10 株式会社東芝 潜像計算方法、マスクパターン作成方法および半導体装置の製造方法
JP2007108508A (ja) * 2005-10-14 2007-04-26 Toshiba Corp マスクパターンの作成方法、マスクの製造方法およびプログラム
JP5055141B2 (ja) * 2008-01-10 2012-10-24 キヤノン株式会社 評価方法、調整方法、露光装置、およびプログラム
JP5178257B2 (ja) * 2008-03-13 2013-04-10 キヤノン株式会社 パラメータ決定方法、露光方法、デバイス製造方法及びプログラム
JP2009302206A (ja) * 2008-06-11 2009-12-24 Canon Inc 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法
JP5153492B2 (ja) * 2008-07-11 2013-02-27 キヤノン株式会社 露光条件決定方法およびコンピュータプログラム
JP5215812B2 (ja) * 2008-10-29 2013-06-19 キヤノン株式会社 照明条件の決定方法、プログラム、露光方法及びデバイス製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004264102A (ja) 2003-02-28 2004-09-24 Matsushita Electric Ind Co Ltd Ｓｅｍシュリンク量測定方法および測長ｓｅｍ装置
JP2006156864A (ja) 2004-12-01 2006-06-15 Sony Corp レジストパターン・ライン幅の算出方法、マスクパターン・ライン幅の補正方法、光近接効果補正方法、露光用マスクの作製方法、露光用マスクを作製するための電子線描画方法、露光方法、及び、半導体装置の製造方法
KR20080079623A (ko) * 2007-02-27 2008-09-01 캐논 가부시끼가이샤 레지스트 패턴 형상 예측 방법, 레지스트 패턴 형상을예측하는 프로그램을 기억한 컴퓨터 판독가능한 기록 매체및 레지스트 패턴 형상을 예측하는 컴퓨터

Also Published As

Publication number Publication date
JP2012089673A (ja) 2012-05-10
CN102455594B (zh) 2013-10-30
US20120092639A1 (en) 2012-04-19
US9448495B2 (en) 2016-09-20
JP5539148B2 (ja) 2014-07-02
TWI454939B (zh) 2014-10-01
CN102455594A (zh) 2012-05-16
TW201217992A (en) 2012-05-01
KR20120040658A (ko) 2012-04-27

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