KR101376830B1 - 플라즈마 산화 및 산화된 재료의 제거 - Google Patents

플라즈마 산화 및 산화된 재료의 제거 Download PDF

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KR101376830B1
KR101376830B1 KR1020137003686A KR20137003686A KR101376830B1 KR 101376830 B1 KR101376830 B1 KR 101376830B1 KR 1020137003686 A KR1020137003686 A KR 1020137003686A KR 20137003686 A KR20137003686 A KR 20137003686A KR 101376830 B1 KR101376830 B1 KR 101376830B1
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South Korea
Prior art keywords
computer readable
conductive layer
readable medium
etching
layer
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KR1020137003686A
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Korean (ko)
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KR20130036066A (ko
Inventor
윤상 김
앤드류 3세 베일리
형석 알렉산더 윤
아서 엠 하워드
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램 리써치 코포레이션
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    • H10D64/011—
    • H10P50/267—
    • H10P50/266—
    • H10P50/269—
    • H10P50/71—
    • H10P95/00—
    • H10P95/04—
    • H10W20/054—
    • H10W20/062—
    • H10W20/063—
    • H10P14/6314—

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
KR1020137003686A 2005-03-09 2006-02-27 플라즈마 산화 및 산화된 재료의 제거 Expired - Fee Related KR101376830B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/076,725 US7540935B2 (en) 2003-03-14 2005-03-09 Plasma oxidation and removal of oxidized material
US11/076,725 2005-03-09
PCT/US2006/007401 WO2006098888A2 (en) 2005-03-09 2006-02-27 Plasma oxidation and removal of oxidized material

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020077022513A Division KR20070112234A (ko) 2005-03-09 2006-02-27 플라즈마 산화 및 산화된 재료의 제거

Publications (2)

Publication Number Publication Date
KR20130036066A KR20130036066A (ko) 2013-04-09
KR101376830B1 true KR101376830B1 (ko) 2014-03-20

Family

ID=36992195

Family Applications (2)

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KR1020137003686A Expired - Fee Related KR101376830B1 (ko) 2005-03-09 2006-02-27 플라즈마 산화 및 산화된 재료의 제거
KR1020077022513A Ceased KR20070112234A (ko) 2005-03-09 2006-02-27 플라즈마 산화 및 산화된 재료의 제거

Family Applications After (1)

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KR1020077022513A Ceased KR20070112234A (ko) 2005-03-09 2006-02-27 플라즈마 산화 및 산화된 재료의 제거

Country Status (6)

Country Link
US (1) US7540935B2 (enExample)
JP (1) JP2008536296A (enExample)
KR (2) KR101376830B1 (enExample)
CN (1) CN101164121B (enExample)
TW (1) TWI310587B (enExample)
WO (1) WO2006098888A2 (enExample)

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KR100729933B1 (ko) * 2005-12-19 2007-06-18 동부일렉트로닉스 주식회사 구리 시드층의 증착 온도 측정 방법 및 이를 이용한 구리층형성 방법
DK2073939T3 (da) * 2006-10-16 2012-10-22 Materials And Technologies Corp Anordning til våd bearbejdning ved anvendelse af en fluidmenisk
KR101532456B1 (ko) * 2007-11-21 2015-06-29 램 리써치 코포레이션 습식 에지 세정을 향상시키는 베벨 플라즈마 처리
US8414790B2 (en) * 2008-11-13 2013-04-09 Lam Research Corporation Bevel plasma treatment to enhance wet edge clean
US20120088370A1 (en) * 2010-10-06 2012-04-12 Lam Research Corporation Substrate Processing System with Multiple Processing Devices Deployed in Shared Ambient Environment and Associated Methods
CN105225976A (zh) * 2014-06-25 2016-01-06 中芯国际集成电路制造(上海)有限公司 焊盘的制作方法及半导体器件
EP3311398A4 (en) * 2015-06-17 2019-02-20 INTEL Corporation TRANSITION METAL DRYING BY ATOMIC LAYER REMOVAL OF OXIDE LAYERS FOR THE MANUFACTURE OF COMPONENTS
CN112382608A (zh) * 2020-11-04 2021-02-19 上海华力集成电路制造有限公司 铜互连线的制造方法
US11557487B2 (en) * 2021-06-04 2023-01-17 Tokyo Electron Limited Etching metal during processing of a semiconductor structure
CN120712638A (zh) * 2023-06-29 2025-09-26 株式会社国际电气 处理方法、处理装置、半导体装置的制造方法以及程序

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KR100483290B1 (ko) 2002-12-14 2005-04-15 동부아남반도체 주식회사 반도체 소자의 제조 방법
WO2004084267A3 (en) * 2003-03-14 2006-02-23 Lam Res Corp System, method and apparatus for improved local dual-damascene planarization

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US6171661B1 (en) * 1998-02-25 2001-01-09 Applied Materials, Inc. Deposition of copper with increased adhesion
JP4307592B2 (ja) * 1998-07-07 2009-08-05 Ｏｋｉセミコンダクタ株式会社 半導体素子における配線形成方法
JP3892621B2 (ja) * 1999-04-19 2007-03-14 株式会社神戸製鋼所 配線膜の形成方法
US6355979B2 (en) * 1999-05-25 2002-03-12 Stmicroelectronics, Inc. Hard mask for copper plasma etch
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
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JP2004193488A (ja) * 2002-12-13 2004-07-08 Tosoh Corp バリア金属用研磨液及び研磨方法
KR100482180B1 (ko) * 2002-12-16 2005-04-14 동부아남반도체 주식회사 반도체 소자 제조방법
US7129167B1 (en) * 2003-03-14 2006-10-31 Lam Research Corporation Methods and systems for a stress-free cleaning a surface of a substrate
US7232766B2 (en) * 2003-03-14 2007-06-19 Lam Research Corporation System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
US6939796B2 (en) * 2003-03-14 2005-09-06 Lam Research Corporation System, method and apparatus for improved global dual-damascene planarization
US7217649B2 (en) * 2003-03-14 2007-05-15 Lam Research Corporation System and method for stress free conductor removal
US20050287698A1 (en) * 2004-06-28 2005-12-29 Zhiyong Li Use of chalcogen plasma to form chalcogenide switching materials for nanoscale electronic devices

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KR100483290B1 (ko) 2002-12-14 2005-04-15 동부아남반도체 주식회사 반도체 소자의 제조 방법
WO2004084267A3 (en) * 2003-03-14 2006-02-23 Lam Res Corp System, method and apparatus for improved local dual-damascene planarization

Also Published As

Publication number Publication date
JP2008536296A (ja) 2008-09-04
KR20130036066A (ko) 2013-04-09
US20060128152A1 (en) 2006-06-15
WO2006098888A3 (en) 2007-12-21
CN101164121B (zh) 2011-01-26
TW200644113A (en) 2006-12-16
TWI310587B (en) 2009-06-01
KR20070112234A (ko) 2007-11-22
CN101164121A (zh) 2008-04-16
US7540935B2 (en) 2009-06-02
WO2006098888A2 (en) 2006-09-21

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