KR101374509B1 - 기판 검사 장치, 기판 검사 방법 및 이 기판 검사 장치의 조정 방법 - Google Patents

기판 검사 장치, 기판 검사 방법 및 이 기판 검사 장치의 조정 방법 Download PDF

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KR101374509B1
KR101374509B1 KR1020120035282A KR20120035282A KR101374509B1 KR 101374509 B1 KR101374509 B1 KR 101374509B1 KR 1020120035282 A KR1020120035282 A KR 1020120035282A KR 20120035282 A KR20120035282 A KR 20120035282A KR 101374509 B1 KR101374509 B1 KR 101374509B1
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substrate
sensor camera
line sensor
image
area
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KR20120123641A (ko
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다이스케 마츠시마
마코토 무토
요시노리 하야시
히로시 와카바
요코 오노
히데키 모리
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시바우라 메카트로닉스 가부시키가이샤
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020120035282A 2011-04-19 2012-04-05 기판 검사 장치, 기판 검사 방법 및 이 기판 검사 장치의 조정 방법 Expired - Fee Related KR101374509B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JPJP-P-2011-093377 2011-04-19
JP2011093378 2011-04-19
JP2011093377 2011-04-19
JPJP-P-2011-093378 2011-04-19
JPJP-P-2012-082640 2012-03-30
JP2012082640A JP6004517B2 (ja) 2011-04-19 2012-03-30 基板検査装置、基板検査方法及び該基板検査装置の調整方法

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KR20120123641A KR20120123641A (ko) 2012-11-09
KR101374509B1 true KR101374509B1 (ko) 2014-03-13

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JP (1) JP6004517B2 (enExample)
KR (1) KR101374509B1 (enExample)
CN (1) CN102749334B (enExample)
TW (1) TWI456189B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190089164A (ko) * 2016-10-26 2019-07-30 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 반사 및 투과형 나노포톤 디바이스를 위한 고 처리량, 고 해상도 광학 기법

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013003090A1 (de) * 2013-02-25 2014-08-28 Texmag Gmbh Vertriebsgesellschaft Verfahren und Vorrichtung zum Prüfen von Faltzuschnitten
JP6330211B2 (ja) * 2013-10-06 2018-05-30 株式会社山梨技術工房 平板基板の表面状態検査方法及びそれを用いた平板基板の表面状態検査装置
KR101619149B1 (ko) * 2014-01-22 2016-05-10 주식회사 브이원텍 칩온글래스 본딩 검사장치
JP6126183B2 (ja) * 2015-10-05 2017-05-10 ファナック株式会社 ターゲットマークを撮像するカメラを備えたロボットシステム
CN106248681A (zh) * 2016-07-18 2016-12-21 南通大学 基于机器视觉的立体对象多类缺陷检测装置及方法
US11073472B2 (en) * 2016-11-14 2021-07-27 Siemens Healthcare Diagnostics Inc. Methods and apparatus for characterizing a specimen using pattern illumination
EP3610500B1 (de) * 2017-04-11 2021-03-31 Mühlbauer GmbH & Co. KG. Bauteil-empfangseinrichtung mit optischem sensor
JP6884082B2 (ja) * 2017-10-11 2021-06-09 株式会社Ｓｃｒｅｅｎホールディングス 膜厚測定装置、基板検査装置、膜厚測定方法および基板検査方法
WO2021039450A1 (ja) * 2019-08-29 2021-03-04 東京エレクトロン株式会社 検査装置の自己診断方法および検査装置
CN111272709B (zh) * 2020-02-25 2021-02-12 中国矿业大学 一种矿物与气泡或油滴间液膜薄化装置
CN112362667B (zh) * 2020-11-04 2021-07-06 广东鑫光智能系统有限公司 一种改进型板材生产用六面检测装置及其检测方法
JP2022191675A (ja) * 2021-06-16 2022-12-28 株式会社ミツトヨ 光学式プローブ及び形状測定装置
JP7709877B2 (ja) * 2021-09-15 2025-07-17 株式会社Ｓｃｒｅｅｎホールディングス 端部状態確認装置
KR102766128B1 (ko) * 2024-10-23 2025-02-12 주식회사 비즈포스 2.5차원 이미지 스캔 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030069836A (ko) * 2002-02-19 2003-08-27 도시바세라믹스가부시키가이샤 웨이퍼용 검사장치
KR20070080591A (ko) * 2006-02-07 2007-08-10 주식회사 한택 라인센서 카메라를 이용한 반도체 기판의 결함검출장치 및방법
KR20100023861A (ko) * 2008-06-27 2010-03-04 니뽄 엘렉트로-센서리 디바이스 가부시끼가이샤 실리콘 웨이퍼의 결함 검사 장치 및 그 결함 검사 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63139237A (ja) * 1986-12-02 1988-06-11 Toshiba Corp 半導体基板の欠陥検査装置
JPH0346314A (ja) * 1989-07-14 1991-02-27 Sumitomo Metal Mining Co Ltd 半導体基板の接合時又は研磨時前の処理方法
US6411377B1 (en) * 1991-04-02 2002-06-25 Hitachi, Ltd. Optical apparatus for defect and particle size inspection
JP2000121326A (ja) * 1998-10-20 2000-04-28 Hitachi Electronics Eng Co Ltd ギャップ検出方式
JP2001005964A (ja) * 1999-06-18 2001-01-12 Fuji Photo Film Co Ltd デジタル画像読取装置用形状検査装置および形状検査方法
JP2002250695A (ja) * 2001-02-26 2002-09-06 Sekisui Chem Co Ltd 多層フィルム欠陥検出装置
JP4709432B2 (ja) * 2001-06-27 2011-06-22 日本特殊陶業株式会社 基板の検査方法及び検査装置並びに電子機器用製品の製造方法
JP2007107945A (ja) * 2005-10-12 2007-04-26 Olympus Corp 基板検査装置
JP2008032433A (ja) * 2006-07-26 2008-02-14 Olympus Corp 基板検査装置
JP5099848B2 (ja) * 2006-08-10 2012-12-19 芝浦メカトロニクス株式会社 円盤状基板の検査装置及び検査方法
JP5128920B2 (ja) * 2007-12-03 2013-01-23 芝浦メカトロニクス株式会社 基板表面検査装置及び基板表面検査方法
CN101887030A (zh) * 2009-05-15 2010-11-17 圣戈本玻璃法国公司 用于检测透明基板表面和/或其内部的缺陷的方法及系统

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030069836A (ko) * 2002-02-19 2003-08-27 도시바세라믹스가부시키가이샤 웨이퍼용 검사장치
KR20070080591A (ko) * 2006-02-07 2007-08-10 주식회사 한택 라인센서 카메라를 이용한 반도체 기판의 결함검출장치 및방법
KR20100023861A (ko) * 2008-06-27 2010-03-04 니뽄 엘렉트로-센서리 디바이스 가부시끼가이샤 실리콘 웨이퍼의 결함 검사 장치 및 그 결함 검사 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190089164A (ko) * 2016-10-26 2019-07-30 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 반사 및 투과형 나노포톤 디바이스를 위한 고 처리량, 고 해상도 광학 기법
US10816482B2 (en) 2016-10-26 2020-10-27 Board Of Regents, The University Of Texas System High throughput, high resolution optical metrology for reflective and transmissive nanophotonic devices
KR102286356B1 (ko) * 2016-10-26 2021-08-04 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 반사 및 투과형 나노포톤 디바이스를 위한 고 처리량, 고 해상도 광학 기법

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TWI456189B (zh) 2014-10-11
KR20120123641A (ko) 2012-11-09
JP2012233880A (ja) 2012-11-29
TW201300765A (zh) 2013-01-01
CN102749334A (zh) 2012-10-24
CN102749334B (zh) 2014-08-27
JP6004517B2 (ja) 2016-10-12

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