KR101368308B1 - 유기 표면 패시베이션에 의한 바텀 업 도금 및 차등 도금 지연 - Google Patents

유기 표면 패시베이션에 의한 바텀 업 도금 및 차등 도금 지연 Download PDF

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Publication number
KR101368308B1
KR101368308B1 KR1020117014681A KR20117014681A KR101368308B1 KR 101368308 B1 KR101368308 B1 KR 101368308B1 KR 1020117014681 A KR1020117014681 A KR 1020117014681A KR 20117014681 A KR20117014681 A KR 20117014681A KR 101368308 B1 KR101368308 B1 KR 101368308B1
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South Korea
Prior art keywords
trench
substrate
passivation film
via structures
seed layer
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Expired - Fee Related
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KR1020117014681A
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English (en)
Korean (ko)
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KR20110102374A (ko
Inventor
젠-예 왕
후아 청
롱 타오
홍 장
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H10W20/0765—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches the thin functional dielectric layers being temporary, e.g. sacrificial layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
KR1020117014681A 2008-11-24 2009-11-19 유기 표면 패시베이션에 의한 바텀 업 도금 및 차등 도금 지연 Expired - Fee Related KR101368308B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11754008P 2008-11-24 2008-11-24
US61/117,540 2008-11-24
US12/620,818 US8293647B2 (en) 2008-11-24 2009-11-18 Bottom up plating by organic surface passivation and differential plating retardation
US12/620,818 2009-11-18
PCT/US2009/065193 WO2010059857A2 (en) 2008-11-24 2009-11-19 Bottom up plating by organic surface passivation and differential plating retardation

Publications (2)

Publication Number Publication Date
KR20110102374A KR20110102374A (ko) 2011-09-16
KR101368308B1 true KR101368308B1 (ko) 2014-02-26

Family

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Family Applications (1)

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KR1020117014681A Expired - Fee Related KR101368308B1 (ko) 2008-11-24 2009-11-19 유기 표면 패시베이션에 의한 바텀 업 도금 및 차등 도금 지연

Country Status (6)

Country Link
US (1) US8293647B2 (cg-RX-API-DMAC10.html)
JP (1) JP5409801B2 (cg-RX-API-DMAC10.html)
KR (1) KR101368308B1 (cg-RX-API-DMAC10.html)
CN (1) CN102224574B (cg-RX-API-DMAC10.html)
TW (1) TWI397616B (cg-RX-API-DMAC10.html)
WO (1) WO2010059857A2 (cg-RX-API-DMAC10.html)

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US9653353B2 (en) 2009-08-04 2017-05-16 Novellus Systems, Inc. Tungsten feature fill
JP5667485B2 (ja) * 2011-03-17 2015-02-12 ルネサスエレクトロニクス株式会社 半導体装置の製造方法、及び半導体装置
US20130051530A1 (en) * 2011-08-30 2013-02-28 Fujifilm Corporation High Aspect Ratio Grid for Phase Contrast X-ray Imaging and Method of Making the Same
CN102798471B (zh) * 2011-10-19 2015-08-12 清华大学 一种红外探测器及其制备方法
US8754531B2 (en) * 2012-03-14 2014-06-17 Nanya Technology Corp. Through-silicon via with a non-continuous dielectric layer
US10381266B2 (en) 2012-03-27 2019-08-13 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
KR101972969B1 (ko) * 2012-08-20 2019-04-29 에스케이하이닉스 주식회사 반도체 소자 및 그 제조 방법
CN104112697B (zh) * 2013-04-18 2017-09-15 中芯国际集成电路制造(上海)有限公司 一种改善铜填充质量的方法
JP6187008B2 (ja) * 2013-08-07 2017-08-30 大日本印刷株式会社 金属充填構造体の製造方法及び金属充填構造体
US9899234B2 (en) 2014-06-30 2018-02-20 Lam Research Corporation Liner and barrier applications for subtractive metal integration
US9349637B2 (en) * 2014-08-21 2016-05-24 Lam Research Corporation Method for void-free cobalt gap fill
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9859124B2 (en) * 2015-04-17 2018-01-02 Taiwan Semiconductor Manufacturing Company Ltd Method of manufacturing semiconductor device with recess
US10170320B2 (en) 2015-05-18 2019-01-01 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
US20160351493A1 (en) * 2015-05-27 2016-12-01 Macronix International Co., Ltd. Semiconductor device and manufacturing method for the same
WO2017070190A1 (en) * 2015-10-23 2017-04-27 Applied Materials, Inc. Bottom-up gap-fill by surface poisoning treatment
US10438847B2 (en) 2016-05-13 2019-10-08 Lam Research Corporation Manganese barrier and adhesion layers for cobalt
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
US10242879B2 (en) 2017-04-20 2019-03-26 Lam Research Corporation Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition
KR102828798B1 (ko) 2018-12-05 2025-07-02 램 리써치 코포레이션 보이드 프리 (void free) 저응력 (low stress) 충진
SG11202108725XA (en) 2019-02-13 2021-09-29 Lam Res Corp Tungsten feature fill with inhibition control
WO2020255772A1 (ja) * 2019-06-18 2020-12-24 東京エレクトロン株式会社 基板処理方法および基板処理装置

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Also Published As

Publication number Publication date
TWI397616B (zh) 2013-06-01
WO2010059857A3 (en) 2010-08-19
JP5409801B2 (ja) 2014-02-05
US20100130007A1 (en) 2010-05-27
JP2012510162A (ja) 2012-04-26
KR20110102374A (ko) 2011-09-16
TW201026911A (en) 2010-07-16
CN102224574B (zh) 2014-06-11
WO2010059857A2 (en) 2010-05-27
US8293647B2 (en) 2012-10-23
CN102224574A (zh) 2011-10-19

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