KR101356222B1 - 반도체 물질의 ｃｍｐ를 위한 조성물 및 방법 - Google Patents

반도체 물질의 ｃｍｐ를 위한 조성물 및 방법 Download PDF

Info

Publication number
KR101356222B1
KR101356222B1 KR1020097003970A KR20097003970A KR101356222B1 KR 101356222 B1 KR101356222 B1 KR 101356222B1 KR 1020097003970 A KR1020097003970 A KR 1020097003970A KR 20097003970 A KR20097003970 A KR 20097003970A KR 101356222 B1 KR101356222 B1 KR 101356222B1
Authority
KR
South Korea
Prior art keywords
delete delete
polishing
composition
metal
polishing rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020097003970A
Other languages
English (en)
Korean (ko)
Other versions
KR20090047494A (ko
Inventor
프란세스코 드 레제 테사우로
스티븐 그룸빈
필립 카터
소우티안 리
지안 장
데이비드 슈뢰더
밍-시 차이
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐보트 마이크로일렉트로닉스 코포레이션 filed Critical 캐보트 마이크로일렉트로닉스 코포레이션
Publication of KR20090047494A publication Critical patent/KR20090047494A/ko
Application granted granted Critical
Publication of KR101356222B1 publication Critical patent/KR101356222B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020097003970A 2006-08-30 2007-08-29 반도체 물질의 ｃｍｐ를 위한 조성물 및 방법 Active KR101356222B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US84100506P 2006-08-30 2006-08-30
US60/841,005 2006-08-30
US11/673,399 US7803203B2 (en) 2005-09-26 2007-02-09 Compositions and methods for CMP of semiconductor materials
US11/673,399 2007-02-09
PCT/US2007/018980 WO2008027421A1 (en) 2006-08-30 2007-08-29 Compositions and methods for cmp of semiconductor materials

Publications (2)

Publication Number Publication Date
KR20090047494A KR20090047494A (ko) 2009-05-12
KR101356222B1 true KR101356222B1 (ko) 2014-01-28

Family

ID=39136242

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097003970A Active KR101356222B1 (ko) 2006-08-30 2007-08-29 반도체 물질의 ｃｍｐ를 위한 조성물 및 방법

Country Status (6)

Country Link
US (2) US7803203B2 (https=)
JP (1) JP5313900B2 (https=)
KR (1) KR101356222B1 (https=)
CN (1) CN101506325B (https=)
TW (1) TWI414573B (https=)
WO (1) WO2008027421A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US9548211B2 (en) * 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
KR101268615B1 (ko) 2008-12-11 2013-06-04 히타치가세이가부시끼가이샤 Ｃｍｐ용 연마액 및 이것을 이용한 연마 방법
JP5455452B2 (ja) * 2009-06-05 2014-03-26 Ｊｓｒ株式会社 表面処理用組成物、表面処理方法および半導体装置の製造方法
JP5582187B2 (ja) 2010-03-12 2014-09-03 日立化成株式会社 スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法
US9988573B2 (en) 2010-11-22 2018-06-05 Hitachi Chemical Company, Ltd. Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
KR101886892B1 (ko) 2010-11-22 2018-08-08 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
TWI575040B (zh) * 2011-03-18 2017-03-21 長興開發科技股份有限公司 可用於拋光矽通孔晶圓之拋光組成物及其用途
JP6044629B2 (ja) 2012-02-21 2016-12-14 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
SG10201606827RA (en) 2012-02-21 2016-10-28 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
JP5943073B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
JP5943072B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
US10557059B2 (en) 2012-05-22 2020-02-11 Hitachi Chemical Company, Ltd. Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
JP6428625B2 (ja) 2013-08-30 2018-11-28 日立化成株式会社 スラリー、研磨液セット、研磨液、及び、基体の研磨方法
KR101682097B1 (ko) * 2014-08-26 2016-12-02 주식회사 케이씨텍 연마 슬러리 조성물
CN108251056A (zh) * 2016-12-29 2018-07-06 圣戈本陶瓷及塑料股份有限公司 研磨颗粒、固定研磨制品以及形成该固定研磨制品的方法
KR102422952B1 (ko) * 2017-06-12 2022-07-19 삼성전자주식회사 금속막 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법
CN108107064A (zh) * 2017-12-14 2018-06-01 河北工业大学 一种用于制备退火后铝钢复合板界面ebsd测试的方法
US10988635B2 (en) * 2018-12-04 2021-04-27 Cmc Materials, Inc. Composition and method for copper barrier CMP
CN113122139B (zh) * 2019-12-30 2024-04-05 安集微电子科技（上海）股份有限公司 一种化学机械抛光液及其使用方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005026277A1 (en) 2003-09-11 2005-03-24 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
US20060030158A1 (en) 2002-01-22 2006-02-09 Cabot Microelectronics Compositions and methods for tantalum CMP
WO2006023105A1 (en) 2004-07-28 2006-03-02 Cabot Microelectronics Corporation Polishing composition for noble metals
WO2006044417A2 (en) * 2004-10-12 2006-04-27 Cabot Microelectronics Corporation Cmp composition with a polymer additive for polishing noble metals

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4789648A (en) 1985-10-28 1988-12-06 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4671851A (en) 1985-10-28 1987-06-09 International Business Machines Corporation Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
JPH01270512A (ja) 1988-04-21 1989-10-27 Tanaka Kikinzoku Kogyo Kk 貴金属の溶解方法
US4910155A (en) 1988-10-28 1990-03-20 International Business Machines Corporation Wafer flood polishing
US5044128A (en) 1990-06-27 1991-09-03 Priority Co., Ltd. Magnetically-polishing machine and process
US5626715A (en) 1993-02-05 1997-05-06 Lsi Logic Corporation Methods of polishing semiconductor substrates
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5691219A (en) 1994-09-17 1997-11-25 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor memory device
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
JPH0982668A (ja) 1995-09-20 1997-03-28 Sony Corp 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5693239A (en) 1995-10-10 1997-12-02 Rodel, Inc. Polishing slurries comprising two abrasive components and methods for their use
JPH09190626A (ja) 1995-11-10 1997-07-22 Kao Corp 研磨材組成物、磁気記録媒体用基板及びその製造方法並びに磁気記録媒体
DE69734868T2 (de) 1996-07-25 2006-08-03 Dupont Air Products Nanomaterials L.L.C., Tempe Zusammensetzung und verfahren zum chemisch-mechanischen polieren
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6126853A (en) 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5916855A (en) 1997-03-26 1999-06-29 Advanced Micro Devices, Inc. Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films
US6001269A (en) 1997-05-20 1999-12-14 Rodel, Inc. Method for polishing a composite comprising an insulator, a metal, and titanium
US6093649A (en) 1998-08-07 2000-07-25 Rodel Holdings, Inc. Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto
JPH11121411A (ja) 1997-10-09 1999-04-30 Matsushita Electron Corp 研磨用スラリー，白金族系金属膜の研磨方法及び半導体記憶装置のセル形成方法
US6083838A (en) 1998-05-20 2000-07-04 Lucent Technologies Inc. Method of planarizing a surface on a semiconductor wafer
US6063306A (en) 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6274063B1 (en) 1998-11-06 2001-08-14 Hmt Technology Corporation Metal polishing composition
US6290736B1 (en) 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
DE19927286B4 (de) 1999-06-15 2011-07-28 Qimonda AG, 81739 Verwendung einer Schleiflösung zum chemisch-mechanischen Polieren einer Edelmetall-Oberfläche
US6293848B1 (en) 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US20020039839A1 (en) 1999-12-14 2002-04-04 Thomas Terence M. Polishing compositions for noble metals
JP2004514266A (ja) 1999-12-14 2004-05-13 ロデール　ホールディングス　インコーポレイテッド 貴金属用研磨組成物
JP2001187876A (ja) * 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー
JP3872925B2 (ja) 2000-01-26 2007-01-24 株式会社東芝 研磨装置および半導体装置の製造方法
US6416685B1 (en) 2000-04-11 2002-07-09 Honeywell International Inc. Chemical mechanical planarization of low dielectric constant materials
US6736992B2 (en) 2000-04-11 2004-05-18 Honeywell International Inc. Chemical mechanical planarization of low dielectric constant materials
US6569215B2 (en) 2000-04-17 2003-05-27 Showa Denko Kabushiki Kaisha Composition for polishing magnetic disk substrate
AU2001274909A1 (en) 2000-05-31 2001-12-11 The John Hopkins University Pulsed laser sampling for mass spectrometer system
US6551935B1 (en) 2000-08-31 2003-04-22 Micron Technology, Inc. Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6623355B2 (en) 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
EP1369906B1 (en) * 2001-02-20 2012-06-27 Hitachi Chemical Company, Ltd. Polishing compound and method for polishing substrate
JP2002270549A (ja) * 2001-03-12 2002-09-20 Toshiba Corp 研磨スラリー
US6722942B1 (en) 2001-05-21 2004-04-20 Advanced Micro Devices, Inc. Chemical mechanical polishing with electrochemical control
US6705926B2 (en) 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
US7019138B2 (en) 2001-10-30 2006-03-28 Colorado State University Research Foundation Metal complex-based electron-transfer mediators in dye-sensitized solar cells
US7097541B2 (en) * 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
US6527622B1 (en) 2002-01-22 2003-03-04 Cabot Microelectronics Corporation CMP method for noble metals
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
WO2003089515A1 (en) 2002-04-22 2003-10-30 Konica Minolta Holdings, Inc. Organic semiconductor composition, organic semiconductor element, and process for producing the same
US6803353B2 (en) 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US7241725B2 (en) 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
EP1706805A2 (en) * 2003-11-26 2006-10-04 Intec Telecom Systems PLC System and method for configuring a graphical user interface based on data type
JP2005286047A (ja) * 2004-03-29 2005-10-13 Nitta Haas Inc 半導体研磨用組成物
US20050279733A1 (en) * 2004-06-18 2005-12-22 Cabot Microelectronics Corporation CMP composition for improved oxide removal rate
JP5147185B2 (ja) * 2005-01-24 2013-02-20 昭和電工株式会社 研磨組成物及び研磨方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060030158A1 (en) 2002-01-22 2006-02-09 Cabot Microelectronics Compositions and methods for tantalum CMP
WO2005026277A1 (en) 2003-09-11 2005-03-24 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
WO2006023105A1 (en) 2004-07-28 2006-03-02 Cabot Microelectronics Corporation Polishing composition for noble metals
WO2006044417A2 (en) * 2004-10-12 2006-04-27 Cabot Microelectronics Corporation Cmp composition with a polymer additive for polishing noble metals

Also Published As

Publication number Publication date
TWI414573B (zh) 2013-11-11
US7803203B2 (en) 2010-09-28
WO2008027421A1 (en) 2008-03-06
JP5313900B2 (ja) 2013-10-09
JP2010503211A (ja) 2010-01-28
US20100314576A1 (en) 2010-12-16
CN101506325B (zh) 2013-07-31
CN101506325A (zh) 2009-08-12
US20070181535A1 (en) 2007-08-09
US8529680B2 (en) 2013-09-10
KR20090047494A (ko) 2009-05-12
TW200825147A (en) 2008-06-16

Similar Documents

Publication Publication Date Title
KR101356222B1 (ko) 반도체 물질의 ｃｍｐ를 위한 조성물 및 방법
KR101252895B1 (ko) Ｃｍｐ 적용에서의 조율가능한 선택성 슬러리
JP5539433B2 (ja) 研磨組成物及び研磨方法
KR101031446B1 (ko) 칼코게나이드 물질의 화학 기계적 평탄화를 위한 방법
US6063306A (en) Chemical mechanical polishing slurry useful for copper/tantalum substrate
KR101263626B1 (ko) Ｃｍｐ용 연마액 및 연마방법
US20020111024A1 (en) Chemical mechanical polishing compositions
KR102312220B1 (ko) 텅스텐 화학적 기계적 연마 조성물
CN101511966B (zh) 含有鎓的cmp组合物及其使用方法
KR20090009285A (ko) 반도체 물질의 ｃｍｐ를 위한 조성물 및 방법
EP1996664B1 (en) Halide anions for metal removal rate control
KR20080111149A (ko) 구리 함유 기판에 대한 ｃｍｐ 방법
KR20080108561A (ko) 요오드산염을 함유하는 화학적-기계적 연마 조성물 및 방법
US20100167545A1 (en) Method and Composition for Chemical Mechanical Planarization of A Metal
JP2005129951A (ja) 酸化剤を含有しない研磨流体を用いる銅ｃｍｐにおける第二工程研磨の方法
WO2009056491A1 (en) Cmp slurry composition and process for planarizing copper containing surfaces provided with a diffusion barrier layer
KR102649775B1 (ko) 4차 포스포늄 화합물을 포함하는 조성물 및 방법을 사용하는 텅스텐의 화학 기계적 연마

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20090226

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20120409

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20130624

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20131120

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20140121

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20140121

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20161228

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20161228

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20180102

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20180102

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20190103

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20190103

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20211229

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20221221

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20231227

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20241224

Start annual number: 12

End annual number: 12