KR101345563B1 - 반도체 제조용 석영유리 부재의 제조방법 및 그 방법에의해 제조된 부재 - Google Patents

반도체 제조용 석영유리 부재의 제조방법 및 그 방법에의해 제조된 부재 Download PDF

Info

Publication number
KR101345563B1
KR101345563B1 KR1020077017871A KR20077017871A KR101345563B1 KR 101345563 B1 KR101345563 B1 KR 101345563B1 KR 1020077017871 A KR1020077017871 A KR 1020077017871A KR 20077017871 A KR20077017871 A KR 20077017871A KR 101345563 B1 KR101345563 B1 KR 101345563B1
Authority
KR
South Korea
Prior art keywords
etching
quartz glass
surface roughness
average surface
machining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020077017871A
Other languages
English (en)
Korean (ko)
Other versions
KR20070102700A (ko
Inventor
주에겐 웨버
율리히 컬스트
Original Assignee
헤래우스 크바르츠글라스 게엠베하 & 컴파니 케이지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 헤래우스 크바르츠글라스 게엠베하 & 컴파니 케이지 filed Critical 헤래우스 크바르츠글라스 게엠베하 & 컴파니 케이지
Publication of KR20070102700A publication Critical patent/KR20070102700A/ko
Application granted granted Critical
Publication of KR101345563B1 publication Critical patent/KR101345563B1/ko
Assigned to 신에쯔 세끼에이 가부시키가이샤 reassignment 신에쯔 세끼에이 가부시키가이샤 권리의 전부이전등록 Assignors: 헤래우스 크바르츠글라스 게엠베하 & 컴파니 케이지
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2204/00Glasses, glazes or enamels with special properties
    • C03C2204/08Glass having a rough surface
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Surface Treatment Of Glass (AREA)
KR1020077017871A 2005-02-03 2006-01-18 반도체 제조용 석영유리 부재의 제조방법 및 그 방법에의해 제조된 부재 Expired - Fee Related KR101345563B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005005196A DE102005005196B4 (de) 2005-02-03 2005-02-03 Verfahren zur Herstellung eines Bauteils aus Quarzglas für den Einsatz in der Halbleiterfertigung und nach dem Verfahren erhaltenes Bauteil
DE102005005196.0 2005-02-03
PCT/EP2006/000381 WO2006081940A1 (de) 2005-02-03 2006-01-18 Verfahren zur herstellung eines bauteils aus quarzglas für den einsatz in der halbleiterfertigung und nach dem verfahren erhaltenes bauteil

Publications (2)

Publication Number Publication Date
KR20070102700A KR20070102700A (ko) 2007-10-19
KR101345563B1 true KR101345563B1 (ko) 2014-01-02

Family

ID=36480954

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077017871A Expired - Fee Related KR101345563B1 (ko) 2005-02-03 2006-01-18 반도체 제조용 석영유리 부재의 제조방법 및 그 방법에의해 제조된 부재

Country Status (8)

Country Link
US (1) US20080193715A1 (https=)
EP (1) EP1843984B1 (https=)
JP (1) JP5274022B2 (https=)
KR (1) KR101345563B1 (https=)
CN (1) CN101115691B (https=)
DE (1) DE102005005196B4 (https=)
IL (1) IL184622A (https=)
WO (1) WO2006081940A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170036985A (ko) 2015-09-25 2017-04-04 한국세라믹기술원 석영 유리의 표면 엠보싱화 방법

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005017739B4 (de) 2005-04-15 2009-11-05 Heraeus Quarzglas Gmbh & Co. Kg Halter aus Quarzglas für die Prozessierung von Halbleiterwafern und Verfahren zur Herstellung des Halters
CN103247551A (zh) * 2012-02-01 2013-08-14 上海科秉电子科技有限公司 一种用于半导体制程中钟罩零件的粗糙度再生方法
CN108698880B (zh) 2015-12-18 2023-05-02 贺利氏石英玻璃有限两合公司 不透明石英玻璃体的制备
US11339076B2 (en) 2015-12-18 2022-05-24 Heraeus Quarzglas Gmbh & Co. Kg Preparation of carbon-doped silicon dioxide granulate as an intermediate in the preparation of quartz glass
CN109153593A (zh) 2015-12-18 2019-01-04 贺利氏石英玻璃有限两合公司 合成石英玻璃粉粒的制备
KR20180095618A (ko) 2015-12-18 2018-08-27 헤래우스 크바르츠글라스 게엠베하 & 컴파니 케이지 다중-챔버 가열로에서 실리카 유리체의 제조
JP6940235B2 (ja) 2015-12-18 2021-09-22 ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー 高融点金属の溶融坩堝内での石英ガラス体の調製
EP3390303B1 (de) 2015-12-18 2024-02-07 Heraeus Quarzglas GmbH & Co. KG Herstellung von quarzglaskörpern mit taupunktkontrolle im schmelzofen
JP6981710B2 (ja) 2015-12-18 2021-12-17 ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー 二酸化ケイ素造粒体からの石英ガラス体の調製
EP3390304B1 (de) 2015-12-18 2023-09-13 Heraeus Quarzglas GmbH & Co. KG Sprühgranulieren von siliziumdioxid bei der herstellung von quarzglas
WO2017103153A1 (de) 2015-12-18 2017-06-22 Heraeus Quarzglas Gmbh & Co. Kg Glasfasern und vorformen aus quarzglas mit geringem oh-, cl- und al-gehalt
TWI840318B (zh) 2015-12-18 2024-05-01 德商何瑞斯廓格拉斯公司 石英玻璃體、光導、施照體、成型體及製備彼等之方法及矽組分之用途
KR102275790B1 (ko) * 2019-11-15 2021-07-09 세메스 주식회사 석영 부재의 표면 처리 방법 및 석영 부재
CN114102440A (zh) * 2020-08-28 2022-03-01 长鑫存储技术有限公司 用于石英部件的表面处理方法
KR20240036521A (ko) * 2021-06-25 2024-03-20 신에쯔 세끼에이 가부시키가이샤 석영 유리 지그의 제조 방법 및 석영 유리 지그
KR20230036331A (ko) 2021-09-07 2023-03-14 임재영 나노 보호코팅층을 가지는 반도체 공정용 글래스
CN115008027B (zh) * 2022-06-16 2023-04-28 江苏富乐华半导体科技股份有限公司 一种覆铜陶瓷基板产品的追溯方式
KR102825674B1 (ko) * 2024-05-31 2025-06-26 신에쯔 세끼에이 가부시키가이샤 성막 처리 가스 노출용 석영 유리 부재 및 이의 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040238487A1 (en) * 2003-05-30 2004-12-02 Kiehlbauch Mark W. Methods of finishing quartz glass surfaces and components made by the methods

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19713014C2 (de) * 1997-03-27 1999-01-21 Heraeus Quarzglas Bauteil aus Quarzglas für die Verwendung bei der Halbleiterherstellung
US6368410B1 (en) 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article
JP4294176B2 (ja) * 1999-09-13 2009-07-08 株式会社山形信越石英 表面が砂目加工された石英物品の洗浄方法
DE10018857C1 (de) * 2000-04-14 2001-11-29 Heraeus Quarzglas Vorrichtung zur Herstellung eines Quarzglaskörpers
JP2002047034A (ja) * 2000-07-31 2002-02-12 Shinetsu Quartz Prod Co Ltd プラズマを利用したプロセス装置用の石英ガラス治具
KR100547743B1 (ko) * 2000-09-28 2006-01-31 신에쯔 세끼에이 가부시키가이샤 반도체공업용 실리카유리지그 및 그 제조방법
US7045072B2 (en) * 2003-07-24 2006-05-16 Tan Samantha S H Cleaning process and apparatus for silicate materials

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040238487A1 (en) * 2003-05-30 2004-12-02 Kiehlbauch Mark W. Methods of finishing quartz glass surfaces and components made by the methods
WO2004108617A2 (en) * 2003-05-30 2004-12-16 Lam Research Corporation Methods of finishing quartz glass surfaces and components made by the methods

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170036985A (ko) 2015-09-25 2017-04-04 한국세라믹기술원 석영 유리의 표면 엠보싱화 방법

Also Published As

Publication number Publication date
WO2006081940A1 (de) 2006-08-10
EP1843984B1 (de) 2017-06-14
JP5274022B2 (ja) 2013-08-28
DE102005005196B4 (de) 2009-04-23
IL184622A (en) 2012-01-31
CN101115691A (zh) 2008-01-30
CN101115691B (zh) 2012-06-13
EP1843984A1 (de) 2007-10-17
IL184622A0 (en) 2007-12-03
KR20070102700A (ko) 2007-10-19
JP2008528432A (ja) 2008-07-31
US20080193715A1 (en) 2008-08-14
DE102005005196A1 (de) 2006-08-17

Similar Documents

Publication Publication Date Title
KR101345563B1 (ko) 반도체 제조용 석영유리 부재의 제조방법 및 그 방법에의해 제조된 부재
US7250114B2 (en) Methods of finishing quartz glass surfaces and components made by the methods
US5981392A (en) Method of manufacturing semiconductor monocrystalline mirror-surface wafers which includes a gas phase etching process, and semiconductor monocrystalline mirror-surface wafers manufactured by the method
US7829467B2 (en) Method for producing a polished semiconductor
CN1424746A (zh) 硅半导体晶片及制造多个半导体晶片的方法
JPH10335304A (ja) 半導体ウエハエッチング方法
KR100558164B1 (ko) 질화물 제거용 식각액 및 이를 이용한 반도체 소자의질화막 제거방법
KR20020043217A (ko) 샌드 블라스트 처리된 표면을 가지는 석영 유리 제품과상기 제품을 청정하는 방법
JPH11233485A (ja) 半導体ウエーハの加工方法および半導体ウエーハ
JPH1116844A (ja) エピタキシャルシリコンウェーハの製造方法と素材用ウェーハ
JP4890668B2 (ja) 半導体熱処理用反応装置の石英ガラス製蓋体およびその製造方法
US5972802A (en) Prevention of edge stain in silicon wafers by ozone dipping
KR102900927B1 (ko) 피라미드 텍스쳐 표면 또는 다각뿔 구조체 표면을 갖는 플라즈마용 부품의 제조방법 및 이에 따라 제조된 플라즈마용 부품
US20040023510A1 (en) Method for producing a quartz glass tank for use in ultrasonic cleaning used for fabricating semiconductor and quartz glass tank obtainable from that method
KR20220145959A (ko) 석영유리 표면 처리 방법 및 이로부터 제조된 석영유리
KR20200050520A (ko) 양극 산화 피막 제조 방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20161209

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20171208

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20241221

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

H13 Ip right lapsed

Free format text: ST27 STATUS EVENT CODE: N-4-6-H10-H13-OTH-PC1903 (AS PROVIDED BY THE NATIONAL OFFICE); TERMINATION CATEGORY : DEFAULT_OF_REGISTRATION_FEE

Effective date: 20241221

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20241221