CN101115691B - 制备用于半导体制造的石英玻璃元件的方法，和根据该方法得到的元件 - Google Patents

制备用于半导体制造的石英玻璃元件的方法，和根据该方法得到的元件 Download PDF

Info

Publication number
CN101115691B
CN101115691B CN2006800039912A CN200680003991A CN101115691B CN 101115691 B CN101115691 B CN 101115691B CN 2006800039912 A CN2006800039912 A CN 2006800039912A CN 200680003991 A CN200680003991 A CN 200680003991A CN 101115691 B CN101115691 B CN 101115691B
Authority
CN
China
Prior art keywords
etching
surface roughness
average surface
quartz glass
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006800039912A
Other languages
English (en)
Chinese (zh)
Other versions
CN101115691A (zh
Inventor
J·维伯
U·基斯特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
Original Assignee
Heraeus Quarzglas GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Quarzglas GmbH and Co KG filed Critical Heraeus Quarzglas GmbH and Co KG
Publication of CN101115691A publication Critical patent/CN101115691A/zh
Application granted granted Critical
Publication of CN101115691B publication Critical patent/CN101115691B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2204/00—Glasses, glazes or enamels with special properties
    • C03C2204/08—Glass having a rough surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Surface Treatment Of Glass (AREA)
CN2006800039912A 2005-02-03 2006-01-18 制备用于半导体制造的石英玻璃元件的方法，和根据该方法得到的元件 Expired - Fee Related CN101115691B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005005196A DE102005005196B4 (de) 2005-02-03 2005-02-03 Verfahren zur Herstellung eines Bauteils aus Quarzglas für den Einsatz in der Halbleiterfertigung und nach dem Verfahren erhaltenes Bauteil
DE102005005196.0 2005-02-03
PCT/EP2006/000381 WO2006081940A1 (de) 2005-02-03 2006-01-18 Verfahren zur herstellung eines bauteils aus quarzglas für den einsatz in der halbleiterfertigung und nach dem verfahren erhaltenes bauteil

Publications (2)

Publication Number Publication Date
CN101115691A CN101115691A (zh) 2008-01-30
CN101115691B true CN101115691B (zh) 2012-06-13

Family

ID=36480954

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800039912A Expired - Fee Related CN101115691B (zh) 2005-02-03 2006-01-18 制备用于半导体制造的石英玻璃元件的方法，和根据该方法得到的元件

Country Status (8)

Country Link
US (1) US20080193715A1 (https=)
EP (1) EP1843984B1 (https=)
JP (1) JP5274022B2 (https=)
KR (1) KR101345563B1 (https=)
CN (1) CN101115691B (https=)
DE (1) DE102005005196B4 (https=)
IL (1) IL184622A (https=)
WO (1) WO2006081940A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005017739B4 (de) 2005-04-15 2009-11-05 Heraeus Quarzglas Gmbh & Co. Kg Halter aus Quarzglas für die Prozessierung von Halbleiterwafern und Verfahren zur Herstellung des Halters
CN103247551A (zh) * 2012-02-01 2013-08-14 上海科秉电子科技有限公司 一种用于半导体制程中钟罩零件的粗糙度再生方法
KR20170036985A (ko) 2015-09-25 2017-04-04 한국세라믹기술원 석영 유리의 표면 엠보싱화 방법
CN108698880B (zh) 2015-12-18 2023-05-02 贺利氏石英玻璃有限两合公司 不透明石英玻璃体的制备
US11339076B2 (en) 2015-12-18 2022-05-24 Heraeus Quarzglas Gmbh & Co. Kg Preparation of carbon-doped silicon dioxide granulate as an intermediate in the preparation of quartz glass
CN109153593A (zh) 2015-12-18 2019-01-04 贺利氏石英玻璃有限两合公司 合成石英玻璃粉粒的制备
KR20180095618A (ko) 2015-12-18 2018-08-27 헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지 다중-챔버 가열로에서 실리카 유리체의 제조
JP6940235B2 (ja) 2015-12-18 2021-09-22 ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー 高融点金属の溶融坩堝内での石英ガラス体の調製
EP3390303B1 (de) 2015-12-18 2024-02-07 Heraeus Quarzglas GmbH & Co. KG Herstellung von quarzglaskörpern mit taupunktkontrolle im schmelzofen
JP6981710B2 (ja) 2015-12-18 2021-12-17 ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー 二酸化ケイ素造粒体からの石英ガラス体の調製
EP3390304B1 (de) 2015-12-18 2023-09-13 Heraeus Quarzglas GmbH & Co. KG Sprühgranulieren von siliziumdioxid bei der herstellung von quarzglas
WO2017103153A1 (de) 2015-12-18 2017-06-22 Heraeus Quarzglas Gmbh & Co. Kg Glasfasern und vorformen aus quarzglas mit geringem oh-, cl- und al-gehalt
TWI840318B (zh) 2015-12-18 2024-05-01 德商何瑞斯廓格拉斯公司 石英玻璃體、光導、施照體、成型體及製備彼等之方法及矽組分之用途
KR102275790B1 (ko) * 2019-11-15 2021-07-09 세메스 주식회사 석영 부재의 표면 처리 방법 및 석영 부재
CN114102440A (zh) * 2020-08-28 2022-03-01 长鑫存储技术有限公司 用于石英部件的表面处理方法
KR20240036521A (ko) * 2021-06-25 2024-03-20 신에쯔 세끼에이 가부시키가이샤 석영 유리 지그의 제조 방법 및 석영 유리 지그
KR20230036331A (ko) 2021-09-07 2023-03-14 임재영 나노 보호코팅층을 가지는 반도체 공정용 글래스
CN115008027B (zh) * 2022-06-16 2023-04-28 江苏富乐华半导体科技股份有限公司 一种覆铜陶瓷基板产品的追溯方式
KR102825674B1 (ko) * 2024-05-31 2025-06-26 신에쯔 세끼에이 가부시키가이샤 성막 처리 가스 노출용 석영 유리 부재 및 이의 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150006A (en) * 1997-03-27 2000-11-21 Heraeus Quarzglas Gmbh & Co. Kg Quartz glass component used in the production of semiconductors
US6368410B1 (en) * 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4294176B2 (ja) * 1999-09-13 2009-07-08 株式会社山形信越石英 表面が砂目加工された石英物品の洗浄方法
DE10018857C1 (de) * 2000-04-14 2001-11-29 Heraeus Quarzglas Vorrichtung zur Herstellung eines Quarzglaskörpers
JP2002047034A (ja) * 2000-07-31 2002-02-12 Shinetsu Quartz Prod Co Ltd プラズマを利用したプロセス装置用の石英ガラス治具
KR100547743B1 (ko) * 2000-09-28 2006-01-31 신에쯔 세끼에이 가부시키가이샤 반도체공업용 실리카유리지그 및 그 제조방법
US7250114B2 (en) * 2003-05-30 2007-07-31 Lam Research Corporation Methods of finishing quartz glass surfaces and components made by the methods
US7045072B2 (en) * 2003-07-24 2006-05-16 Tan Samantha S H Cleaning process and apparatus for silicate materials

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150006A (en) * 1997-03-27 2000-11-21 Heraeus Quarzglas Gmbh & Co. Kg Quartz glass component used in the production of semiconductors
US6368410B1 (en) * 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article

Also Published As

Publication number Publication date
WO2006081940A1 (de) 2006-08-10
EP1843984B1 (de) 2017-06-14
KR101345563B1 (ko) 2014-01-02
JP5274022B2 (ja) 2013-08-28
DE102005005196B4 (de) 2009-04-23
IL184622A (en) 2012-01-31
CN101115691A (zh) 2008-01-30
EP1843984A1 (de) 2007-10-17
IL184622A0 (en) 2007-12-03
KR20070102700A (ko) 2007-10-19
JP2008528432A (ja) 2008-07-31
US20080193715A1 (en) 2008-08-14
DE102005005196A1 (de) 2006-08-17

Similar Documents

Publication Publication Date Title
CN101115691B (zh) 制备用于半导体制造的石英玻璃元件的方法，和根据该方法得到的元件
TWI221636B (en) Silicon semiconductor wafer, and process for producing a multiplicity of semiconductor wafers
Pei et al. Fine grinding of silicon wafers
US5639311A (en) Method of cleaning brushes used in post CMP semiconductor wafer cleaning operations
CN101656193B (zh) 一种硅片加工工艺
CN101791779A (zh) 半导体硅片制造工艺
CN103072073B (zh) 一种保持硅晶圆抛光片少数载流子高寿命的抛光工艺
US6566267B1 (en) Inexpensive process for producing a multiplicity of semiconductor wafers
CN101934490B (zh) 超高电阻率硅抛光片的抛光工艺
CN1833816A (zh) 蓝宝石晶片纳米级超光滑加工工艺
KR20060111869A (ko) 반도체 웨이퍼 제조방법, 절단작업을 위한 절단방법 및이에 사용되는 와이어 소
JP2007300127A (ja) 研磨した半導体ウェーハの製造方法
CN107378654B (zh) 一种钽酸锂晶片的抛光方法
CN101367618B (zh) 石英表面化学粗糙处理方法
CN102172879A (zh) 基于固结磨料抛光垫的软脆lbo晶体的加工方法
JP3066750B2 (ja) 半導体ウェーハの製造方法
JP5310848B2 (ja) シリコンウェーハの研磨方法及びシリコンウェーハ
CN113070808B (zh) 化学机械研磨工艺的研磨控制方法
Jeong et al. CMP pad break-in time reduction in silicon wafer polishing
CN103014876A (zh) 一种单晶硅晶圆单切腐蚀片的加工方法
CN102363330A (zh) 超薄硅片的切割方法
CN1152422C (zh) 制造晶片用的碳化硅舟的切割制造方法
CN104838444B (zh) 硬盘用玻璃基板的制造方法
KR20150004476A (ko) 태양광 발전용 초박형 실리콘 웨이퍼 제조 방법
EP1193327B1 (en) Silica glass apparatus for semiconductor industry and method for producing the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210729

Address after: Tokyo, Japan

Patentee after: SHIN-ETSU QUARTZ PRODUCTS Co.,Ltd.

Address before: Hanau

Patentee before: HERAEUS QUARZGLAS GmbH & Co.KG

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120613