KR101333899B1 - 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법 및 박막 트랜지스터의 제조 방법 - Google Patents
다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법 및 박막 트랜지스터의 제조 방법 Download PDFInfo
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- KR101333899B1 KR101333899B1 KR1020120108986A KR20120108986A KR101333899B1 KR 101333899 B1 KR101333899 B1 KR 101333899B1 KR 1020120108986 A KR1020120108986 A KR 1020120108986A KR 20120108986 A KR20120108986 A KR 20120108986A KR 101333899 B1 KR101333899 B1 KR 101333899B1
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- KR
- South Korea
- Prior art keywords
- light
- pattern
- film
- gradation photomask
- optical film
- Prior art date
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2011-217784 | 2011-09-30 | ||
JP2011217784A JP6076593B2 (ja) | 2011-09-30 | 2011-09-30 | 表示装置製造用多階調フォトマスク、表示装置製造用多階調フォトマスクの製造方法、パターン転写方法及び薄膜トランジスタの製造方法 |
Publications (2)
Publication Number | Publication Date |
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KR20130035957A KR20130035957A (ko) | 2013-04-09 |
KR101333899B1 true KR101333899B1 (ko) | 2013-11-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020120108986A KR101333899B1 (ko) | 2011-09-30 | 2012-09-28 | 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법 및 박막 트랜지스터의 제조 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6076593B2 (ja) |
KR (1) | KR101333899B1 (ja) |
CN (1) | CN103034044B (ja) |
TW (1) | TWI480679B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6106579B2 (ja) * | 2013-11-25 | 2017-04-05 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク及びパターン転写方法 |
CN104111581A (zh) * | 2014-07-09 | 2014-10-22 | 京东方科技集团股份有限公司 | 掩膜板及其制造方法、薄膜晶体管的制造方法 |
KR102378211B1 (ko) * | 2015-06-23 | 2022-03-25 | 삼성디스플레이 주식회사 | 마스크 및 이를 이용한 표시장치의 제조방법 |
JP6767735B2 (ja) * | 2015-06-30 | 2020-10-14 | Hoya株式会社 | フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法 |
JP6322607B2 (ja) * | 2015-07-30 | 2018-05-09 | Hoya株式会社 | 表示デバイス製造用多階調フォトマスク、表示デバイス製造用多階調フォトマスクの製造方法、及び薄膜トランジスタの製造方法 |
WO2018063780A1 (en) * | 2016-09-09 | 2018-04-05 | Ntt Docomo, Inc. | A manufacturing method of diffractive optical elements |
JP2018106022A (ja) * | 2016-12-27 | 2018-07-05 | Hoya株式会社 | 表示装置製造用フォトマスクの製造方法および表示装置の製造方法 |
JP6532919B2 (ja) * | 2017-09-07 | 2019-06-19 | Hoya株式会社 | 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク、及び表示装置の製造方法 |
KR102081490B1 (ko) | 2017-12-07 | 2020-02-25 | 인하대학교 산학협력단 | 비닐계 호모폴리머 이온성 젤의 녹는점을 이용한 스탬핑 전사방법 및 이에 의하여 전사된 비닐계 호모폴리머 이온성 젤 |
KR102367141B1 (ko) * | 2019-02-27 | 2022-02-23 | 호야 가부시키가이샤 | 포토마스크, 포토마스크의 제조 방법, 및 표시 장치의 제조 방법 |
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KR20110083583A (ko) * | 2008-04-15 | 2011-07-20 | 호야 가부시키가이샤 | 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법, 및 박막 트랜지스터의 제조 방법 |
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2011
- 2011-09-30 JP JP2011217784A patent/JP6076593B2/ja active Active
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2012
- 2012-09-24 TW TW101134977A patent/TWI480679B/zh active
- 2012-09-28 CN CN201210370046.3A patent/CN103034044B/zh active Active
- 2012-09-28 KR KR1020120108986A patent/KR101333899B1/ko active IP Right Grant
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JP2006084507A (ja) | 2004-09-14 | 2006-03-30 | Matsushita Electric Ind Co Ltd | 位相シフトマスク及び位相シフトマスクの製造方法 |
KR20080022227A (ko) * | 2005-08-11 | 2008-03-10 | 후지쯔 가부시끼가이샤 | 노광용 마스크 및 패턴 전사 방법 |
KR20110083583A (ko) * | 2008-04-15 | 2011-07-20 | 호야 가부시키가이샤 | 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법, 및 박막 트랜지스터의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
JP2013076922A (ja) | 2013-04-25 |
CN103034044A (zh) | 2013-04-10 |
TW201319727A (zh) | 2013-05-16 |
CN103034044B (zh) | 2014-09-10 |
TWI480679B (zh) | 2015-04-11 |
JP6076593B2 (ja) | 2017-02-08 |
KR20130035957A (ko) | 2013-04-09 |
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