KR101333138B1 - 유기 발광 장치의 제조 방법, 무기막 전사용 기판 및 유기 발광 장치 - Google Patents

유기 발광 장치의 제조 방법, 무기막 전사용 기판 및 유기 발광 장치 Download PDF

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KR101333138B1
KR101333138B1 KR1020120022519A KR20120022519A KR101333138B1 KR 101333138 B1 KR101333138 B1 KR 101333138B1 KR 1020120022519 A KR1020120022519 A KR 1020120022519A KR 20120022519 A KR20120022519 A KR 20120022519A KR 101333138 B1 KR101333138 B1 KR 101333138B1
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substrate
film
inorganic
light emitting
organic light
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KR20130101397A (ko
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박진우
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삼성디스플레이 주식회사
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Priority to KR1020120022519A priority Critical patent/KR101333138B1/ko
Priority to US13/607,638 priority patent/US8791452B2/en
Priority to TW101138986A priority patent/TW201338233A/zh
Priority to EP20130187260 priority patent/EP2682998A1/en
Priority to EP12192714.9A priority patent/EP2637230B1/en
Priority to CN2013200781651U priority patent/CN203312371U/zh
Priority to CN201310054330.4A priority patent/CN103311457B/zh
Priority to JP2013036371A priority patent/JP6080613B2/ja
Publication of KR20130101397A publication Critical patent/KR20130101397A/ko
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Publication of KR101333138B1 publication Critical patent/KR101333138B1/ko
Priority to US14/341,663 priority patent/US9343703B2/en
Priority to JP2017005785A priority patent/JP6559166B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/42—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating of an organic material and at least one non-metal coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06—Joining glass to glass by processes other than fusing
    • C03C27/10—Joining glass to glass by processes other than fusing with the aid of adhesive specially adapted for that purpose
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/34—Masking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020120022519A 2012-03-05 2012-03-05 유기 발광 장치의 제조 방법, 무기막 전사용 기판 및 유기 발광 장치 Active KR101333138B1 (ko)

Priority Applications (10)

Application Number Priority Date Filing Date Title
KR1020120022519A KR101333138B1 (ko) 2012-03-05 2012-03-05 유기 발광 장치의 제조 방법, 무기막 전사용 기판 및 유기 발광 장치
US13/607,638 US8791452B2 (en) 2012-03-05 2012-09-07 Method of preparing organic light-emitting device, substrate for transiting inorganic layer, and organic light-emitting device
TW101138986A TW201338233A (zh) 2012-03-05 2012-10-23 準備有機發光裝置之方法、用於無機層轉移之基板及有機發光裝置
EP12192714.9A EP2637230B1 (en) 2012-03-05 2012-11-15 Method of preparing organic light-emitting device
EP20130187260 EP2682998A1 (en) 2012-03-05 2012-11-15 Method of preparing organic light-emitting device, substrate for transiting inorganic layer, and organic light-emitting device
CN201310054330.4A CN103311457B (zh) 2012-03-05 2013-02-20 用于转变无机层的基板、有机发光装置及其制备方法
CN2013200781651U CN203312371U (zh) 2012-03-05 2013-02-20 用于转变无机层的基板及有机发光装置
JP2013036371A JP6080613B2 (ja) 2012-03-05 2013-02-26 有機発光装置の製造方法、無機膜転写用基板及び有機発光装置
US14/341,663 US9343703B2 (en) 2012-03-05 2014-07-25 Organic light-emitting device having low temperature viscosity transition (LVT) inorganic material
JP2017005785A JP6559166B2 (ja) 2012-03-05 2017-01-17 有機発光装置の製造方法、無機膜転写用基板及び有機発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120022519A KR101333138B1 (ko) 2012-03-05 2012-03-05 유기 발광 장치의 제조 방법, 무기막 전사용 기판 및 유기 발광 장치

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Publication Number Publication Date
KR20130101397A KR20130101397A (ko) 2013-09-13
KR101333138B1 true KR101333138B1 (ko) 2013-11-26

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US (2) US8791452B2 (cg-RX-API-DMAC10.html)
EP (2) EP2682998A1 (cg-RX-API-DMAC10.html)
JP (2) JP6080613B2 (cg-RX-API-DMAC10.html)
KR (1) KR101333138B1 (cg-RX-API-DMAC10.html)
CN (2) CN103311457B (cg-RX-API-DMAC10.html)
TW (1) TW201338233A (cg-RX-API-DMAC10.html)

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KR102051103B1 (ko) * 2012-11-07 2019-12-03 삼성디스플레이 주식회사 유기 발광 표시 장치
KR101971202B1 (ko) * 2012-11-22 2019-04-23 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
KR101473310B1 (ko) * 2012-12-06 2014-12-16 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
KR102033612B1 (ko) * 2012-12-27 2019-10-17 엘지디스플레이 주식회사 유기전계발광표시장치 및 이의 제조방법
KR102103421B1 (ko) 2013-02-07 2020-04-23 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR20140120541A (ko) * 2013-04-03 2014-10-14 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR102072805B1 (ko) * 2013-04-15 2020-02-04 삼성디스플레이 주식회사 유기발광표시장치 및 그의 제조방법
KR101784468B1 (ko) 2014-05-23 2017-10-12 삼성디스플레이 주식회사 유기 발광 디스플레이 장치 및 그 제조방법
KR102409748B1 (ko) 2015-07-28 2022-06-17 삼성전자주식회사 반도체 장치 및 그 제조 방법
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WO2019082355A1 (ja) * 2017-10-26 2019-05-02 堺ディスプレイプロダクト株式会社 フレキシブルｏｌｅｄデバイスの製造方法および製造装置
JP6556417B1 (ja) * 2017-12-26 2019-08-07 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置およびその製造方法
CN108365117A (zh) * 2018-01-31 2018-08-03 昆山国显光电有限公司 封装结构与封装方法及封装结构制备装置
JP6556298B2 (ja) * 2018-06-15 2019-08-07 堺ディスプレイプロダクト株式会社 フレキシブルｏｌｅｄデバイスの製造方法および製造装置
WO2020026745A1 (ja) 2018-07-30 2020-02-06 三菱マテリアル株式会社 低α線放出量の酸化第一錫及びその製造方法
JP7314658B2 (ja) * 2018-07-30 2023-07-26 三菱マテリアル株式会社 低α線放出量の酸化第一錫の製造方法
KR102775871B1 (ko) * 2019-12-04 2025-03-07 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법
KR20240040311A (ko) 2022-09-21 2024-03-28 엘지디스플레이 주식회사 전계 발광 표시 장치

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US8791452B2 (en) 2014-07-29
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