KR101327064B1 - 단결정 실리콘 인상 장치, 실리콘 융액의 오염 방지 방법및 실리콘 융액의 오염 방지 장치 - Google Patents

단결정 실리콘 인상 장치, 실리콘 융액의 오염 방지 방법및 실리콘 융액의 오염 방지 장치 Download PDF

Info

Publication number
KR101327064B1
KR101327064B1 KR1020087007391A KR20087007391A KR101327064B1 KR 101327064 B1 KR101327064 B1 KR 101327064B1 KR 1020087007391 A KR1020087007391 A KR 1020087007391A KR 20087007391 A KR20087007391 A KR 20087007391A KR 101327064 B1 KR101327064 B1 KR 101327064B1
Authority
KR
South Korea
Prior art keywords
single crystal
crystal silicon
heat shield
silicon
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020087007391A
Other languages
English (en)
Korean (ko)
Other versions
KR20080042146A (ko
Inventor
마코토 카모가와
코이치 시모무라
요시유키 스즈키
다이스케 에비
Original Assignee
사무코 테크시부 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 사무코 테크시부 가부시키가이샤 filed Critical 사무코 테크시부 가부시키가이샤
Publication of KR20080042146A publication Critical patent/KR20080042146A/ko
Application granted granted Critical
Publication of KR101327064B1 publication Critical patent/KR101327064B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020087007391A 2005-09-27 2006-06-27 단결정 실리콘 인상 장치, 실리콘 융액의 오염 방지 방법및 실리콘 융액의 오염 방지 장치 Expired - Lifetime KR101327064B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005279979A JP4349493B2 (ja) 2005-09-27 2005-09-27 単結晶シリコン引き上げ装置、シリコン融液の汚染防止方法及びシリコン融液の汚染防止装置
JPJP-P-2005-00279979 2005-09-27
PCT/JP2006/312791 WO2007037052A1 (ja) 2005-09-27 2006-06-27 単結晶シリコン引き上げ装置、シリコン融液の汚染防止方法及びシリコン融液の汚染防止装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020137007398A Division KR101311911B1 (ko) 2005-09-27 2006-06-27 단결정 실리콘 인상 장치, 실리콘 융액의 오염 방지 방법 및 실리콘 융액의 오염 방지 장치

Publications (2)

Publication Number Publication Date
KR20080042146A KR20080042146A (ko) 2008-05-14
KR101327064B1 true KR101327064B1 (ko) 2013-11-07

Family

ID=37899488

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020087007391A Expired - Lifetime KR101327064B1 (ko) 2005-09-27 2006-06-27 단결정 실리콘 인상 장치, 실리콘 융액의 오염 방지 방법및 실리콘 융액의 오염 방지 장치
KR1020137007398A Expired - Lifetime KR101311911B1 (ko) 2005-09-27 2006-06-27 단결정 실리콘 인상 장치, 실리콘 융액의 오염 방지 방법 및 실리콘 융액의 오염 방지 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020137007398A Expired - Lifetime KR101311911B1 (ko) 2005-09-27 2006-06-27 단결정 실리콘 인상 장치, 실리콘 융액의 오염 방지 방법 및 실리콘 융액의 오염 방지 장치

Country Status (6)

Country Link
US (2) US8404046B2 (enExample)
JP (1) JP4349493B2 (enExample)
KR (2) KR101327064B1 (enExample)
DE (2) DE112006002580B4 (enExample)
TW (1) TW200714753A (enExample)
WO (1) WO2007037052A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5186970B2 (ja) * 2008-03-24 2013-04-24 信越半導体株式会社 単結晶製造装置及びその方法
KR101871059B1 (ko) * 2016-11-17 2018-07-20 에스케이실트론 주식회사 단결정 잉곳 성장장치
JP6760128B2 (ja) 2017-02-24 2020-09-23 株式会社Sumco シリコン単結晶の製造方法、整流部材、および、単結晶引き上げ装置
DE102017220352B4 (de) 2017-11-15 2023-02-02 Siltronic Ag Verfahren zum Überprüfen einer Vorrichtung zum Ziehen eines Einkristalls und Vorrichtung zum Ziehen eines Einkristalls
DE102018217509A1 (de) * 2018-10-12 2020-04-16 Siltronic Ag Vorrichtung zum Ziehen eines Einkristalls aus Halbleitermaterial nach der CZ-Methode aus einer Schmelze und Verfahren unter Verwendung der Vorrichtung
CN111663178A (zh) * 2019-03-08 2020-09-15 宁夏隆基硅材料有限公司 直拉单晶用热屏装置及单晶硅生产设备
DE112021005336T5 (de) * 2020-12-10 2023-07-20 Shin-Etsu Handotai Co., Ltd. Vorrichtung zur herstellung eines einkristalls

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04209789A (ja) * 1990-11-30 1992-07-31 Toshiba Ceramics Co Ltd 単結晶シリコン引上げ装置
JP2002351997A (ja) 2001-05-28 2002-12-06 Higashi Nihon Medicom Kk 携帯電話を用いたｉｃカード保険証システム
JP2003104793A (ja) 2001-08-31 2003-04-09 Siltron Inc 輻射熱吸収用コーティング材及びその製造方法、該コーティング材を用いた輻射熱冷却装置及び単結晶シリコンインゴット成長装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2783049B2 (ja) * 1992-02-28 1998-08-06 信越半導体株式会社 単結晶シリコン棒の製造方法及び製造装置
JP2952733B2 (ja) * 1992-10-09 1999-09-27 コマツ電子金属株式会社 シリコン単結晶製造方法
JP2807609B2 (ja) * 1993-01-28 1998-10-08 三菱マテリアルシリコン株式会社 単結晶の引上装置
DE19503357A1 (de) * 1995-02-02 1996-08-08 Wacker Siltronic Halbleitermat Vorrichtung zur Herstellung eines Einkristalls
JP2937109B2 (ja) * 1996-02-29 1999-08-23 住友金属工業株式会社 単結晶の製造装置および製造方法
JP3992800B2 (ja) * 1997-09-22 2007-10-17 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置および単結晶の製造方法
JP4195738B2 (ja) * 1998-04-08 2008-12-10 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置
JP3747696B2 (ja) * 1999-07-23 2006-02-22 株式会社Ｓｕｍｃｏ シリコン単結晶引上げ装置の熱遮蔽部材
TW588127B (en) * 2000-02-01 2004-05-21 Komatsu Denshi Kinzoku Kk Apparatus for pulling single crystal by CZ method
JP3573045B2 (ja) * 2000-02-08 2004-10-06 三菱住友シリコン株式会社 高品質シリコン単結晶の製造方法
US6277351B1 (en) * 2000-03-20 2001-08-21 Carl Francis Swinehart Crucible for growing macrocrystals
US6482263B1 (en) * 2000-10-06 2002-11-19 Memc Electronic Materials, Inc. Heat shield assembly for crystal pulling apparatus
JP4439810B2 (ja) * 2001-01-26 2010-03-24 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 酸化誘起積層欠陥を実質的に有さない空孔優勢コアを有する低欠陥密度シリコン
JP2002321997A (ja) 2001-04-20 2002-11-08 Shin Etsu Handotai Co Ltd シリコン単結晶の製造装置及びそれを用いたシリコン単結晶の製造方法
WO2003027434A1 (en) * 2001-09-26 2003-04-03 Bakke Technology As Arrangement in a gripper mechanism for a free pipe/rodlike end portion of a downhole tool
KR100486876B1 (ko) 2002-12-03 2005-05-03 주식회사 실트론 실리콘 단결정 성장 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04209789A (ja) * 1990-11-30 1992-07-31 Toshiba Ceramics Co Ltd 単結晶シリコン引上げ装置
JP2002351997A (ja) 2001-05-28 2002-12-06 Higashi Nihon Medicom Kk 携帯電話を用いたｉｃカード保険証システム
JP2003104793A (ja) 2001-08-31 2003-04-09 Siltron Inc 輻射熱吸収用コーティング材及びその製造方法、該コーティング材を用いた輻射熱冷却装置及び単結晶シリコンインゴット成長装置

Also Published As

Publication number Publication date
JP2007091493A (ja) 2007-04-12
WO2007037052A1 (ja) 2007-04-05
US8404046B2 (en) 2013-03-26
JP4349493B2 (ja) 2009-10-21
DE112006004261B4 (de) 2017-04-13
US20090229512A1 (en) 2009-09-17
DE112006002580T5 (de) 2008-08-14
DE112006004261A5 (de) 2012-09-20
KR101311911B1 (ko) 2013-09-27
US20120222613A1 (en) 2012-09-06
TWI324642B (enExample) 2010-05-11
TW200714753A (en) 2007-04-16
KR20130045932A (ko) 2013-05-06
US9080251B2 (en) 2015-07-14
DE112006002580B4 (de) 2017-02-23
KR20080042146A (ko) 2008-05-14

Similar Documents

Publication Publication Date Title
CN114318500B (zh) 一种用于拉制单晶硅棒的拉晶炉、方法及单晶硅棒
US9080251B2 (en) Single crystal silicon pulling device, method for preventing contamination of silicon melt, and device for preventing contamination of silicon melt
TW201447057A (zh) 用於控制氧氣的坩堝總成及相關方法
KR20180101586A (ko) 실리콘 단결정의 제조 방법
US7291225B2 (en) Heat shield and crystal growth equipment
US20090293804A1 (en) Method of shoulder formation in growing silicon single crystals
US20080115720A1 (en) Apparatus and method for manufacturing semiconductor single crystal
KR101117477B1 (ko) 단결정 제조방법 및 단결정
US20070240629A1 (en) Method for manufacturing a silicon single crystal
JP4650520B2 (ja) シリコン単結晶の製造装置及び製造方法
KR20110134827A (ko) 실리콘으로 구성된 반도체 웨이퍼를 제조하는 방법
JP5415052B2 (ja) 極低欠陥半導体単結晶製造方法及びその製造装置
JP2619611B2 (ja) 単結晶の製造装置および製造方法
JP2004161566A (ja) シリコンウェーハの製造方法およびその製造装置およびシリコンウェーハ
JP4499178B2 (ja) シリコン融液の汚染防止装置
JP3750174B2 (ja) 単結晶の製造装置および製造方法
JP4293188B2 (ja) 単結晶の製造方法及びシリコン単結晶ウエーハ
JPH06122587A (ja) シリコン単結晶製造装置および製造方法
CN107075717B (zh) 用于防止熔体污染的拉晶机
WO2007013148A1 (ja) シリコン単結晶引上装置及びその方法
JP2007204305A (ja) 単結晶引上装置
JPH09278581A (ja) 単結晶製造装置および単結晶製造方法
JP6996477B2 (ja) 単結晶の製造方法
JP2008189529A (ja) 半導体単結晶の製造方法
JPH0834696A (ja) 結晶成長装置

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20080327

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20110215

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20130124

Patent event code: PE09021S01D

A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20130322

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20130826

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20131101

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20131101

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20161021

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20161021

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20171020

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20171020

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20181023

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20181023

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20221021

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20231020

Start annual number: 11

End annual number: 11