DE112006004261A5 - Gerät zum Verhindern der Kontamination von Siliciumschmelze - Google Patents

Gerät zum Verhindern der Kontamination von Siliciumschmelze Download PDF

Info

Publication number
DE112006004261A5
DE112006004261A5 DE200611004261 DE112006004261T DE112006004261A5 DE 112006004261 A5 DE112006004261 A5 DE 112006004261A5 DE 200611004261 DE200611004261 DE 200611004261 DE 112006004261 T DE112006004261 T DE 112006004261T DE 112006004261 A5 DE112006004261 A5 DE 112006004261A5
Authority
DE
Germany
Prior art keywords
silicon melt
preventing contamination
contamination
preventing
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE200611004261
Other languages
English (en)
Other versions
DE112006004261B4 (de
Inventor
Daisuke Ebi
Koichi Shimomura
Makoto Kamogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Sumco Techxiv Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Techxiv Corp filed Critical Sumco Techxiv Corp
Publication of DE112006004261A5 publication Critical patent/DE112006004261A5/de
Application granted granted Critical
Publication of DE112006004261B4 publication Critical patent/DE112006004261B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112006004261.0T 2005-09-27 2006-06-27 Gerät zum Verhindern der Kontamination von Siliciumschmelze Active DE112006004261B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005279979A JP4349493B2 (ja) 2005-09-27 2005-09-27 単結晶シリコン引き上げ装置、シリコン融液の汚染防止方法及びシリコン融液の汚染防止装置
JP2005-279979 2005-09-27

Publications (2)

Publication Number Publication Date
DE112006004261A5 true DE112006004261A5 (de) 2012-09-20
DE112006004261B4 DE112006004261B4 (de) 2017-04-13

Family

ID=37899488

Family Applications (2)

Application Number Title Priority Date Filing Date
DE112006002580.5T Active DE112006002580B4 (de) 2005-09-27 2006-06-27 Einkristallsiliciumziehgerät und Verfahren zum Verhindern der Kontamination von Siliciumschmelze
DE112006004261.0T Active DE112006004261B4 (de) 2005-09-27 2006-06-27 Gerät zum Verhindern der Kontamination von Siliciumschmelze

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE112006002580.5T Active DE112006002580B4 (de) 2005-09-27 2006-06-27 Einkristallsiliciumziehgerät und Verfahren zum Verhindern der Kontamination von Siliciumschmelze

Country Status (6)

Country Link
US (2) US8404046B2 (de)
JP (1) JP4349493B2 (de)
KR (2) KR101327064B1 (de)
DE (2) DE112006002580B4 (de)
TW (1) TW200714753A (de)
WO (1) WO2007037052A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5186970B2 (ja) * 2008-03-24 2013-04-24 信越半導体株式会社 単結晶製造装置及びその方法
KR101871059B1 (ko) * 2016-11-17 2018-07-20 에스케이실트론 주식회사 단결정 잉곳 성장장치
JP6760128B2 (ja) * 2017-02-24 2020-09-23 株式会社Sumco シリコン単結晶の製造方法、整流部材、および、単結晶引き上げ装置
DE102017220352B4 (de) 2017-11-15 2023-02-02 Siltronic Ag Verfahren zum Überprüfen einer Vorrichtung zum Ziehen eines Einkristalls und Vorrichtung zum Ziehen eines Einkristalls
DE102018217509A1 (de) * 2018-10-12 2020-04-16 Siltronic Ag Vorrichtung zum Ziehen eines Einkristalls aus Halbleitermaterial nach der CZ-Methode aus einer Schmelze und Verfahren unter Verwendung der Vorrichtung
CN111663178A (zh) * 2019-03-08 2020-09-15 宁夏隆基硅材料有限公司 直拉单晶用热屏装置及单晶硅生产设备

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04209789A (ja) * 1990-11-30 1992-07-31 Toshiba Ceramics Co Ltd 単結晶シリコン引上げ装置
JP2783049B2 (ja) 1992-02-28 1998-08-06 信越半導体株式会社 単結晶シリコン棒の製造方法及び製造装置
JP2952733B2 (ja) * 1992-10-09 1999-09-27 コマツ電子金属株式会社 シリコン単結晶製造方法
JP2807609B2 (ja) 1993-01-28 1998-10-08 三菱マテリアルシリコン株式会社 単結晶の引上装置
DE19503357A1 (de) * 1995-02-02 1996-08-08 Wacker Siltronic Halbleitermat Vorrichtung zur Herstellung eines Einkristalls
JP2937109B2 (ja) * 1996-02-29 1999-08-23 住友金属工業株式会社 単結晶の製造装置および製造方法
JP3992800B2 (ja) 1997-09-22 2007-10-17 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置および単結晶の製造方法
JP4195738B2 (ja) * 1998-04-08 2008-12-10 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置
JP3747696B2 (ja) * 1999-07-23 2006-02-22 株式会社Ｓｕｍｃｏ シリコン単結晶引上げ装置の熱遮蔽部材
US6733585B2 (en) * 2000-02-01 2004-05-11 Komatsu Denshi Kinzoku Kabushiki Kaisha Apparatus for pulling single crystal by CZ method
JP3573045B2 (ja) * 2000-02-08 2004-10-06 三菱住友シリコン株式会社 高品質シリコン単結晶の製造方法
US6277351B1 (en) * 2000-03-20 2001-08-21 Carl Francis Swinehart Crucible for growing macrocrystals
US6482263B1 (en) 2000-10-06 2002-11-19 Memc Electronic Materials, Inc. Heat shield assembly for crystal pulling apparatus
KR100854186B1 (ko) * 2001-01-26 2008-08-26 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 산화 유도된 적층 결함을 실질적으로 포함하지 않는베이컨시 지배 코어를 갖는 낮은 결함 밀도의 실리콘
JP2002321997A (ja) 2001-04-20 2002-11-08 Shin Etsu Handotai Co Ltd シリコン単結晶の製造装置及びそれを用いたシリコン単結晶の製造方法
JP5086504B2 (ja) 2001-05-28 2012-11-28 東日本メディコム株式会社 携帯電話を用いたｉｃカード保険証システム
KR100445188B1 (ko) 2001-08-31 2004-08-18 주식회사 실트론 복사열 흡수용 코팅제 및 코팅제를이용한 실리콘 단결정 잉곳 성장장치
CA2478019C (en) * 2001-09-26 2007-11-13 Bakke Technology As Arrangement in a gripper mechanism for a free pipe/rodlike end portion of a downhole tool
KR100486876B1 (ko) 2002-12-03 2005-05-03 주식회사 실트론 실리콘 단결정 성장 장치

Also Published As

Publication number Publication date
US20120222613A1 (en) 2012-09-06
TW200714753A (en) 2007-04-16
KR101311911B1 (ko) 2013-09-27
KR20130045932A (ko) 2013-05-06
US8404046B2 (en) 2013-03-26
KR101327064B1 (ko) 2013-11-07
JP2007091493A (ja) 2007-04-12
DE112006002580B4 (de) 2017-02-23
DE112006002580T5 (de) 2008-08-14
JP4349493B2 (ja) 2009-10-21
US9080251B2 (en) 2015-07-14
TWI324642B (de) 2010-05-11
DE112006004261B4 (de) 2017-04-13
US20090229512A1 (en) 2009-09-17
WO2007037052A1 (ja) 2007-04-05
KR20080042146A (ko) 2008-05-14

Similar Documents

Publication Publication Date Title
DE602006016975D1 (de) Vorrichtung zum ausstossen von flüssigem material
DK1946047T3 (da) Apparat til interferometrisk måling
EP1809173A4 (de) Langzeitüberwachung zum nachweis von vorhofflimmern
EP1870703A4 (de) Vorrichtung zum nachweis kumulativer chemischer/physikalischer phänomene
EP2385158A4 (de) Siliciumcarbideinkristall und siliciumcarbideinkristallwafer
DK1848322T3 (da) Forbedret indretning til overvågning af legemsfunktioner
DE602006018726D1 (de) Abdriftschutzvorrichtung
DE602006007816D1 (de) Vorrichtung zum depalletieren
FI20065801A (fi) Likaantuvan pinnan ravistuslaite
DE602006010346D1 (de) Silikon-schmelzklebstoff
SE0600781L (sv) Halvledaranordning av kiselkarbid
AT504567A3 (de) Verfahren und vorrichtung zum bonden von wafern
DE112006004261A5 (de) Gerät zum Verhindern der Kontamination von Siliciumschmelze
DE112005003854A5 (de) Brechvorrichtung
DE602006017413D1 (de) Siliciumcarbid-halbleiteranordnung
EP1887364A4 (de) Biochipsubstrat und biochip
DE502005000967D1 (de) Vorrichtung zum Fixieren von beweglich gelagerten Teilen
DE602006014485D1 (de) Halbleiterbaustein und Testverfahren dafür
DE602005002860D1 (de) Vorrichtung zum Scannen von Wafern
DE50306864D1 (de) Handhabungsgerät zum Umpositionieren von Teilen
DE602005013307D1 (de) Vorrichtung zum Umdrehen von sich bewegenden Flaschen
DK2016371T3 (da) Anordning og fremgangsmåde til overvågning og styring af detektering af vagabonderende spændingsanomalier
NO20051085D0 (no) Anordning for fjerning av losborret materialet
DE102006048752B8 (de) Verfahren zum Herstellen von Vorrichtungen, Dicingverfahren und Dicingvorrichtung
DE502007002489D1 (de) Handhabungsgerät zum umpositionieren von teilen

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R129 Divisional application from

Ref document number: 112006002580

Country of ref document: DE

Effective date: 20120419

R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final