KR101326636B1 - 발광 다이오드 어레인지먼트 그리고 상기 발광 다이오드 어레인지먼트의 제조 방법 - Google Patents

발광 다이오드 어레인지먼트 그리고 상기 발광 다이오드 어레인지먼트의 제조 방법 Download PDF

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KR101326636B1
KR101326636B1 KR1020097008650A KR20097008650A KR101326636B1 KR 101326636 B1 KR101326636 B1 KR 101326636B1 KR 1020097008650 A KR1020097008650 A KR 1020097008650A KR 20097008650 A KR20097008650 A KR 20097008650A KR 101326636 B1 KR101326636 B1 KR 101326636B1
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light emitting
emitting diode
semiconductor layer
carrier
diode arrangement
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KR20090071622A (ko
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외르크 에리히 조르그
슈테판 그루버
지그프리드 헤르만
베르톨드 한
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오스람 옵토 세미컨덕터스 게엠베하
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KR1020097008650A 2006-09-27 2007-09-25 발광 다이오드 어레인지먼트 그리고 상기 발광 다이오드 어레인지먼트의 제조 방법 Active KR101326636B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006045691.2 2006-09-27
DE102006045691 2006-09-27
DE102007021009.6 2007-05-04
DE102007021009A DE102007021009A1 (de) 2006-09-27 2007-05-04 Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen
PCT/DE2007/001733 WO2008040315A2 (de) 2006-09-27 2007-09-25 Leuchtdiodenanordnung und verfahren zur herstellung einer solchen

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KR20090071622A KR20090071622A (ko) 2009-07-01
KR101326636B1 true KR101326636B1 (ko) 2013-11-08

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US (2) US8154040B2 (enExample)
EP (1) EP2057681B1 (enExample)
JP (1) JP2010505252A (enExample)
KR (1) KR101326636B1 (enExample)
CN (1) CN101523598B (enExample)
DE (1) DE102007021009A1 (enExample)
TW (1) TWI359511B (enExample)
WO (1) WO2008040315A2 (enExample)

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US7985970B2 (en) * 2009-04-06 2011-07-26 Cree, Inc. High voltage low current surface-emitting LED
DE102008050538B4 (de) 2008-06-06 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
KR101495071B1 (ko) * 2008-06-24 2015-02-25 삼성전자 주식회사 서브 마운트 및 이를 이용한 발광 장치, 상기 서브마운트의 제조 방법 및 이를 이용한 발광 장치의 제조 방법
DE102008045653B4 (de) * 2008-09-03 2020-03-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
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US8154040B2 (en) 2012-04-10
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WO2008040315A2 (de) 2008-04-10
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