KR101324169B1 - 표시장치용 어레이기판 및 그 제조방법 - Google Patents

표시장치용 어레이기판 및 그 제조방법 Download PDF

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KR101324169B1
KR101324169B1 KR1020090119349A KR20090119349A KR101324169B1 KR 101324169 B1 KR101324169 B1 KR 101324169B1 KR 1020090119349 A KR1020090119349 A KR 1020090119349A KR 20090119349 A KR20090119349 A KR 20090119349A KR 101324169 B1 KR101324169 B1 KR 101324169B1
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South Korea
Prior art keywords
barrier metal
layer
metal layer
wiring
electrode
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KR1020090119349A
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English (en)
Korean (ko)
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KR20100070991A (ko
Inventor
조용수
문교호
안병용
최희경
김철태
홍성욱
정승우
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엘지디스플레이 주식회사
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Priority to DE102009058245.2A priority Critical patent/DE102009058245B4/de
Priority to US12/640,613 priority patent/US8237163B2/en
Priority to CN200910261521.1A priority patent/CN101750825B/zh
Publication of KR20100070991A publication Critical patent/KR20100070991A/ko
Priority to US13/543,474 priority patent/US8519399B2/en
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Publication of KR101324169B1 publication Critical patent/KR101324169B1/ko

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
KR1020090119349A 2008-12-18 2009-12-03 표시장치용 어레이기판 및 그 제조방법 KR101324169B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE102009058245.2A DE102009058245B4 (de) 2008-12-18 2009-12-14 Arraysubstrat für eine Anzeigevorrichtung und Verfahren zum Herstellen derselben
US12/640,613 US8237163B2 (en) 2008-12-18 2009-12-17 Array substrate for display device and method for fabricating the same
CN200910261521.1A CN101750825B (zh) 2008-12-18 2009-12-18 用于显示设备的阵列基板及其制造方法
US13/543,474 US8519399B2 (en) 2008-12-18 2012-07-06 Array substrate for display device and method for fabricating the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20080129601 2008-12-18
KR1020080129601 2008-12-18

Publications (2)

Publication Number Publication Date
KR20100070991A KR20100070991A (ko) 2010-06-28
KR101324169B1 true KR101324169B1 (ko) 2013-11-05

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KR1020090119349A KR101324169B1 (ko) 2008-12-18 2009-12-03 표시장치용 어레이기판 및 그 제조방법

Country Status (4)

Country Link
KR (1) KR101324169B1 (zh)
CN (2) CN101752361A (zh)
DE (1) DE102009058245B4 (zh)
TW (1) TWI405017B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105977151A (zh) * 2016-06-03 2016-09-28 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示面板

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI446531B (zh) * 2011-05-17 2014-07-21 Au Optronics Corp 畫素結構及電性橋接結構
CN102629586B (zh) * 2011-11-24 2013-12-25 北京京东方光电科技有限公司 一种阵列基板及其制作方法和显示装置
CN103137628B (zh) * 2011-11-30 2015-12-16 上海中航光电子有限公司 一种用于显示装置的薄膜晶体管阵列基板及其制造方法
KR101887691B1 (ko) * 2011-12-09 2018-09-07 엘지디스플레이 주식회사 프린지 필드형 액정표시장치의 제조방법
KR101898624B1 (ko) * 2011-12-14 2018-10-05 엘지디스플레이 주식회사 프린지 필드형 액정표시장치 및 그의 제조방법
KR101897747B1 (ko) * 2011-12-14 2018-10-05 엘지디스플레이 주식회사 에프에프에스 방식 액정표시장치용 어레이기판 및 그 제조방법
CN103762218A (zh) * 2014-01-16 2014-04-30 北京京东方光电科技有限公司 阵列基板及其制造方法和显示装置
DE102015001168A1 (de) 2014-02-14 2015-08-20 Wilhelm König Laserstrahlführung in einer Arbeitsspindel im wesentlichen zur Materialabnahme-Unterstützung und im besonderen zur Material- Re-Schmelzung bis Verdampfung.
CN103915451B (zh) * 2014-03-28 2016-05-18 京东方科技集团股份有限公司 一种阵列基板及其制造方法、显示装置
KR102283812B1 (ko) 2015-02-04 2021-08-02 삼성디스플레이 주식회사 반도체 소자 및 반도체 소자를 포함하는 유기 발광 표시 장치
DE102016001624A1 (de) 2015-10-26 2017-04-27 Wilhelm König Laserstrahlführung in einer Arbeitsspindel und weiter in 2 Typen Werkzeuge im wesentlichen zur duktilen Materialabnahme-Unterstützung und im besonderen zur Material- Re-Schmelzung bis Verdampfung.
KR102448522B1 (ko) * 2015-12-22 2022-09-27 엘지디스플레이 주식회사 액정표시장치
CN107275343B (zh) * 2017-06-15 2019-12-24 深圳市华星光电技术有限公司 底栅型tft基板的制作方法
KR102477989B1 (ko) * 2018-01-10 2022-12-16 삼성디스플레이 주식회사 표시 장치 및 본딩 저항 검사 방법
CN114326231B (zh) * 2021-12-14 2023-10-13 广州华星光电半导体显示技术有限公司 显示面板及其制备方法与显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010081859A (ko) * 2000-02-19 2001-08-29 구본준, 론 위라하디락사 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치
KR20030056254A (ko) * 2001-12-27 2003-07-04 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판의 제조 방법
KR20060097924A (ko) * 2005-03-07 2006-09-18 엘지.필립스 엘시디 주식회사 액정표시패널 및 그 제조방법
KR20080084084A (ko) * 2007-03-14 2008-09-19 엘지디스플레이 주식회사 박막트랜지스터와 이를 포함하는 액정표시장치용 어레이기판의 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004302466A (ja) * 2003-03-29 2004-10-28 Lg Philips Lcd Co Ltd 水平電界印加型液晶表示装置及びその製造方法
KR100617031B1 (ko) * 2003-12-30 2006-08-30 엘지.필립스 엘시디 주식회사 반사투과형 액정표시장치 및 그 제조방법
JP4191641B2 (ja) * 2004-04-02 2008-12-03 三菱電機株式会社 半透過型液晶表示装置およびその製造方法
KR101086477B1 (ko) * 2004-05-27 2011-11-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 기판 제조 방법
KR101126396B1 (ko) * 2004-06-25 2012-03-28 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판 및 그 제조방법
KR101168728B1 (ko) * 2005-07-15 2012-07-26 삼성전자주식회사 배선 구조와 배선 형성 방법 및 박막 트랜지스터 기판과 그제조 방법
TWI304267B (en) * 2006-05-18 2008-12-11 Au Optronics Corp Method for forming tft array substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010081859A (ko) * 2000-02-19 2001-08-29 구본준, 론 위라하디락사 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치
KR20030056254A (ko) * 2001-12-27 2003-07-04 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판의 제조 방법
KR20060097924A (ko) * 2005-03-07 2006-09-18 엘지.필립스 엘시디 주식회사 액정표시패널 및 그 제조방법
KR20080084084A (ko) * 2007-03-14 2008-09-19 엘지디스플레이 주식회사 박막트랜지스터와 이를 포함하는 액정표시장치용 어레이기판의 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105977151A (zh) * 2016-06-03 2016-09-28 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示面板

Also Published As

Publication number Publication date
CN101750825A (zh) 2010-06-23
TW201024882A (en) 2010-07-01
TWI405017B (zh) 2013-08-11
KR20100070991A (ko) 2010-06-28
CN101752361A (zh) 2010-06-23
DE102009058245B4 (de) 2018-02-01
DE102009058245A1 (de) 2010-09-02
CN101750825B (zh) 2014-05-14

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