KR101312485B1 - 스퍼터링된 압전 재료 - Google Patents

스퍼터링된 압전 재료 Download PDF

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Publication number
KR101312485B1
KR101312485B1 KR1020117022188A KR20117022188A KR101312485B1 KR 101312485 B1 KR101312485 B1 KR 101312485B1 KR 1020117022188 A KR1020117022188 A KR 1020117022188A KR 20117022188 A KR20117022188 A KR 20117022188A KR 101312485 B1 KR101312485 B1 KR 101312485B1
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South Korea
Prior art keywords
piezoelectric material
piezoelectric
seed layer
layer
crystal orientation
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Korean (ko)
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KR20110120342A (ko
Inventor
요우밍 리
제프리 버크마이어
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후지필름 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14201—Structure of print heads with piezoelectric elements
    • B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1607—Production of print heads with piezoelectric elements
    • B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Micromachines (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
KR1020117022188A 2009-02-26 2010-02-23 스퍼터링된 압전 재료 Active KR101312485B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/393,644 US8164234B2 (en) 2009-02-26 2009-02-26 Sputtered piezoelectric material
US12/393,644 2009-02-26
PCT/US2010/025012 WO2010099091A1 (en) 2009-02-26 2010-02-23 Sputtered piezoelectric material

Publications (2)

Publication Number Publication Date
KR20110120342A KR20110120342A (ko) 2011-11-03
KR101312485B1 true KR101312485B1 (ko) 2013-10-01

Family

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Application Number Title Priority Date Filing Date
KR1020117022188A Active KR101312485B1 (ko) 2009-02-26 2010-02-23 스퍼터링된 압전 재료

Country Status (6)

Country Link
US (2) US8164234B2 (https=)
EP (1) EP2401414B1 (https=)
JP (1) JP2012519378A (https=)
KR (1) KR101312485B1 (https=)
CN (1) CN102333904B (https=)
WO (1) WO2010099091A1 (https=)

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WO2010129756A1 (en) 2009-05-08 2010-11-11 Swagelok Company Conduit fitting with attached torque collar
JP5399970B2 (ja) * 2010-03-31 2014-01-29 パナソニック株式会社 強誘電体デバイスの製造方法
FR2976126B1 (fr) * 2011-06-01 2014-05-09 Commissariat Energie Atomique Composant electrique comprenant un materiau de structure perovskite et des electrodes optimisees et procede de fabrication
US10266936B2 (en) 2011-10-17 2019-04-23 The United States Of America As Represented By The Secretary Of The Army Process for making lead zirconate titanate (PZT) layers and/or platinum electrodes and products thereof
CN104245324B (zh) * 2012-07-25 2016-10-12 惠普发展公司，有限责任合伙企业 压电致动器和制造压电致动器的方法
US10141497B2 (en) 2012-07-31 2018-11-27 Hewlett-Packard Development Company, L.P. Thin film stack
JP2015065430A (ja) * 2013-08-27 2015-04-09 三菱マテリアル株式会社 ＰＮｂＺＴ薄膜の製造方法
JP6519735B2 (ja) * 2014-03-24 2019-05-29 セイコーエプソン株式会社 圧電素子及び圧電素子応用デバイス
WO2017213415A1 (ko) * 2016-06-10 2017-12-14 주식회사 모다이노칩 음향 출력 장치
KR101865347B1 (ko) * 2016-06-10 2018-06-07 주식회사 모다이노칩 음향 출력 장치
JP7193334B2 (ja) * 2018-12-19 2022-12-20 エスアイアイ・プリンテック株式会社 ヘッドチップ、液体噴射ヘッド、液体噴射記録装置およびヘッドチップの製造方法
CN112853286A (zh) 2019-11-12 2021-05-28 应用材料公司 压电膜的物理气相沉积
JP7667051B2 (ja) * 2021-09-27 2025-04-22 富士フイルム株式会社 圧電積層体及び圧電素子
JP7667052B2 (ja) * 2021-09-27 2025-04-22 富士フイルム株式会社 圧電積層体及び圧電素子
US12550616B2 (en) * 2022-08-17 2026-02-10 Fujifilm Dimatix, Inc. Process of epitaxial grown PZT film and method of making a PZT device

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US20070262678A1 (en) 2006-05-09 2007-11-15 Canon Kabushiki Kaisha Piezoelectric element, piezoelectric actuator, and ink jet recording head
US20080074471A1 (en) 2006-09-15 2008-03-27 Fujifilm Corporation Perovskite oxide, process for producing the perovskite oxide, piezoelectric body, piezoelectric device, and liquid discharge device

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Also Published As

Publication number Publication date
US8164234B2 (en) 2012-04-24
US20120177815A1 (en) 2012-07-12
CN102333904B (zh) 2013-08-07
US20100213795A1 (en) 2010-08-26
EP2401414B1 (en) 2020-06-03
CN102333904A (zh) 2012-01-25
JP2012519378A (ja) 2012-08-23
WO2010099091A1 (en) 2010-09-02
EP2401414A1 (en) 2012-01-04
EP2401414A4 (en) 2013-10-09
KR20110120342A (ko) 2011-11-03

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