KR101308310B1 - 성막 장치 및 성막 방법 - Google Patents

성막 장치 및 성막 방법 Download PDF

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Publication number
KR101308310B1
KR101308310B1 KR1020110079983A KR20110079983A KR101308310B1 KR 101308310 B1 KR101308310 B1 KR 101308310B1 KR 1020110079983 A KR1020110079983 A KR 1020110079983A KR 20110079983 A KR20110079983 A KR 20110079983A KR 101308310 B1 KR101308310 B1 KR 101308310B1
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KR
South Korea
Prior art keywords
raw material
film
substrate
gas
processing container
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KR1020110079983A
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English (en)
Korean (ko)
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KR20120016012A (ko
Inventor
이사오 군지
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20120016012A publication Critical patent/KR20120016012A/ko
Application granted granted Critical
Publication of KR101308310B1 publication Critical patent/KR101308310B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020110079983A 2010-08-12 2011-08-11 성막 장치 및 성막 방법 KR101308310B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-180770 2010-08-12
JP2010180770A JP5792438B2 (ja) 2010-08-12 2010-08-12 成膜装置及び成膜方法

Publications (2)

Publication Number Publication Date
KR20120016012A KR20120016012A (ko) 2012-02-22
KR101308310B1 true KR101308310B1 (ko) 2013-09-17

Family

ID=45794964

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110079983A KR101308310B1 (ko) 2010-08-12 2011-08-11 성막 장치 및 성막 방법

Country Status (3)

Country Link
JP (1) JP5792438B2 (ja)
KR (1) KR101308310B1 (ja)
CN (1) CN102376549A (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5933372B2 (ja) * 2012-07-02 2016-06-08 東京エレクトロン株式会社 原料容器および原料容器の使用方法
CN106282969B (zh) * 2015-06-02 2019-02-15 中微半导体设备(上海)有限公司 化学气相沉积装置及其沉积方法
CN106864044B (zh) * 2017-04-06 2023-03-21 珠海正洋印务有限公司 一种具有烘干功能的uv印刷机
CN111996511A (zh) * 2020-08-10 2020-11-27 长江存储科技有限责任公司 化学气相沉积装置以及氮化钨薄膜的沉积方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070011587A (ko) * 2004-05-18 2007-01-24 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱에서의 마이크로오염물을 감소시키는 방법
KR100830388B1 (ko) * 2004-03-29 2008-05-20 도쿄엘렉트론가부시키가이샤 막 형성 장치 및 막 형성 방법
KR20100072089A (ko) * 2008-01-07 2010-06-29 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1499549A (en) * 1975-05-20 1978-02-01 Inco Europ Ltd Deposition of ruthenium
JPS61113762A (ja) * 1984-09-17 1986-05-31 タウ・ラボラトリ−ズ・インコ−ポレ−テツド 蒸着装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100830388B1 (ko) * 2004-03-29 2008-05-20 도쿄엘렉트론가부시키가이샤 막 형성 장치 및 막 형성 방법
KR20070011587A (ko) * 2004-05-18 2007-01-24 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱에서의 마이크로오염물을 감소시키는 방법
KR20100072089A (ko) * 2008-01-07 2010-06-29 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치

Also Published As

Publication number Publication date
KR20120016012A (ko) 2012-02-22
JP5792438B2 (ja) 2015-10-14
CN102376549A (zh) 2012-03-14
JP2012041564A (ja) 2012-03-01

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