KR101308310B1 - Film forming apparatus and film forming method - Google Patents

Abstract

When forming a film using a solid raw material, it is possible to supply the film-forming raw material gas to the surface of a board | substrate stably and efficiently, and also to provide the film-forming apparatus by which the possibility of particle contamination and the incorporation of an impurity in a film | membrane is reduced.
The film forming apparatus 100 includes a processing container 1 accommodating the wafer W, a substrate heater 11 for heating the wafer W, a holding member 21 for holding the wafer W, And a stage 31 as a raw material support part and a raw material heater 41 for heating a solid raw material. In the film forming apparatus 100, for example, the solid film A is heated on the stage 31 while reacting with another vaporization promoting gas to generate the film forming raw material gas of the wafer W held by the holding member 21. The film is supplied to a lower surface (surface) and thermally decomposed on the surface of the wafer W to form a thin film.

Description

FILM FORMING APPARATUS AND FILM FORMING METHOD}

The present invention relates to a film forming apparatus and a film forming method for performing a film forming process on a semiconductor substrate or the like.

When performing a film-forming process, such as a metal film, on the board | substrate as a to-be-processed object, the film-forming method using a solid raw material is proposed (for example, patent document 1). In the film forming apparatus, when the raw material having a low vapor pressure is vaporized and the raw material is sent to the chamber, the following method is generally employed. For example, the method of putting a solid raw material powder into the container different from a chamber, transporting a solid raw material into a chamber with a carrier gas, heating and vaporizing, and supplying it from the stomach to the film-forming object surface of a board | substrate is known. Moreover, the method of melt | dissolving a solid raw material in a solvent, gasifying solvent solvent with a liquid vaporizer, transporting it with a carrier gas in a chamber, and supplying it from the top to the film-forming object surface of a board | substrate is also known.

However, among the two methods described above, the former method is that the raw material once vaporized once due to the presence of a cold spot in the transport piping from the container containing the raw material to the chamber, the increase in the partial pressure, etc. is solidified and trapped on the way to the chamber. Trouble that there is no transportation may occur. In the latter method, there is a problem that the raw material is decomposed inside the vaporizer and the raw material gas is not supplied to the chamber, or a solvent is introduced into the film to form impurities during film formation, resulting in deterioration of the film quality. have. In the above two methods, when the film-forming raw material is supplied into the chamber by using the shower structure provided on the upper portion of the substrate, particles generated in the shower structure fall due to gravity, and a large number of particles appear on the surface of the substrate. A trouble that it is attached sometimes occurs.

Japanese Patent Application Publication No. 2009-161814

According to the present invention, when forming a film using a solid raw material, it is possible to supply the film forming raw material gas to the surface of the substrate stably and efficiently, and to reduce the possibility of particle contamination and impurity mixing in the film. It aims to provide.

The film forming apparatus of the first aspect of the present invention,

A processing container accommodating a substrate,

A substrate holder for holding a substrate above the processing container;

A first heater for heating the substrate held in the substrate holder;

A raw material support disposed below the substrate held by the substrate holder;

A second heater for heating the solid raw material supported by the raw material support part;

Gas supply means for supplying a vaporization promoting gas to react with the solid raw material to generate a film forming raw material gas in the processing container;

Exhaust means for maintaining a vacuum in the processing vessel

And,

The film forming raw material gas generated in the processing container is thermally decomposed on the substrate surface to form a film.

Moreover, the film-forming apparatus of 2nd viewpoint of this invention,

A processing container accommodating a substrate,

A substrate holder for holding a substrate above the processing container;

A first heater for heating the substrate held in the substrate holder;

A raw material support disposed below the substrate held by the substrate holder;

A second heater for heating the solid raw material supported by the raw material support part;

Exhaust means for maintaining a vacuum in the processing vessel

And,

The vaporization gas generated in the processing container is thermally decomposed on the substrate surface by heating the solid raw material to form a film.

In the film-forming apparatus of the 1st and 2nd viewpoint of this invention, it is preferable that the said board | substrate holder hold | maintains a board | substrate so that the lower surface of a board | substrate may become a to-be-processed surface which performs a film-forming process.

Moreover, in the film-forming apparatus of the 1st and 2nd viewpoint of this invention, it is preferable that the said solid raw material is accommodated and supported in the dish-shaped container opened upward at the said raw material support part.

Moreover, in the film-forming apparatus of 1st and 2nd viewpoint of this invention, it is preferable that the exhaust part connected to the said exhaust means is provided in the upper part of the said processing container. In this case, the gas introduction part connected to the said gas supply means may be provided in the lower part or side part of the said processing container.

The film-forming method of the 3rd viewpoint of this invention is the processing container which accommodates a board | substrate,

A substrate holder for holding a substrate above the processing container;

A first heater for heating the substrate held in the substrate holder;

A raw material support disposed below the substrate held by the substrate holder;

A second heater for heating the solid raw material supported by the raw material support part;

Gas supply means for supplying gas into the processing container;

Exhaust means for maintaining a vacuum in the processing vessel

Using a film forming apparatus equipped with

Placing a solid raw material into the processing container and arranging the raw material support part;

Carrying a substrate into the processing container and holding the substrate by the substrate holder;

The film-forming raw material gas produced by reacting the solid raw material supported by the said raw material support part with the vaporization promoting gas introduce | transduced in the said processing container by the said gas supply means, heating with the said 2nd heater, is made to the surface of the said board | substrate. Supplying, thermal decomposition to form a film

Lt; / RTI >

Moreover, the film-forming method of 4th viewpoint of this invention is the processing container which accommodates a board | substrate,

A substrate holder for holding a substrate above the processing container;

A first heater for heating the substrate held in the substrate holder;

A raw material support disposed below the substrate held by the substrate holder;

A second heater for heating the solid raw material supported by the raw material support part;

Gas supply means for supplying gas into the processing container;

Exhaust means for maintaining a vacuum in the processing vessel

Using a film forming apparatus equipped with

Placing a solid raw material into the processing container and arranging the raw material support part;

Carrying a substrate into the processing container and holding the substrate by the substrate holder;

And a step of heating and evaporating the solid raw material supported by the raw material support part while supplying the vaporized gas to the surface of the substrate and thermally decomposing the film to form a film.

It is preferable to form into a film on the lower surface of the board | substrate hold | maintained by the said board | substrate holder in the film-forming method of the 3rd and 4th viewpoint of this invention.

In the film forming apparatus and the film forming method of the present invention, since the solid raw material is placed in the raw material support in the processing container, the film forming raw material gas generated by reacting with the vaporization promoting gas or the vaporizing gas of the solid raw material (these are simply referred to as "film forming raw materials"). May be collectively referred to as "gas" in the processing vessel. Thus, since there is no piping between the solid raw material and the substrate surface to be formed, the film forming raw material gas can be stably supplied to the substrate surface without trapping the film forming raw material gas in the middle. In addition, since the solid raw material disposed on the raw material support portion is disposed below the surface to be processed of the substrate, the film formation is performed efficiently and the particles are less likely to adhere to the surface to be processed. In addition, since the solvent does not have to be used when gasifying a solid raw material, it is difficult to mix impurities and the apparatus structure is simplified because a liquid vaporizer is not required.

1 is a cross-sectional view showing a schematic configuration of a film forming apparatus according to a first embodiment of the present invention.
FIG. 2 is a view for explaining an example of the configuration of a control unit of the film forming apparatus of FIG. 1. FIG.
FIG. 3 is a view for explaining an example of a film forming method in the film forming apparatus of FIG. 1.
4 is a view for explaining another example of the film forming method in the film forming apparatus of FIG. 1.
FIG. 5 A diagram for describing a modification of the film forming apparatus of FIG. 1. FIG.
6 is a view for explaining another modification example in the film forming apparatus of FIG. 1.
FIG. 7 is a view for explaining still another modification of the film forming apparatus of FIG. 1. FIG.
FIG. 8 is a view for explaining still another modification of the film forming apparatus of FIG. 1. FIG.
9 is a sectional view showing a schematic configuration of a film forming apparatus according to a second embodiment of the present invention.
FIG. 10 is a view for explaining a modification of the film forming apparatus of FIG. 9. FIG.
11 is a cross-sectional view illustrating a schematic configuration of a film forming apparatus according to a third embodiment of the present invention.
FIG. 12 A diagram for describing a modification of the film forming apparatus of FIG. 11. FIG.

[First Embodiment]

The film forming apparatus 100 according to the first embodiment of the present invention will be described. First, the structure of the film-forming apparatus 100 is demonstrated, referring FIG. 1 and FIG. FIG. 1: is sectional drawing which shows schematic structure of the film-forming apparatus 100 which concerns on 1st Embodiment, and FIG. 2 is a figure which shows the structural example of the control system. This film forming apparatus 100 has a main configuration, a processing container 1 for housing a semiconductor wafer (hereinafter referred to as "wafer W") as a substrate to be processed, and a substrate heater 11 as a first heater. ), A holding member 21 for holding the wafer W, a stage 31 as a raw material support part, and a raw material heater 41 as a second heater. In addition, the film forming apparatus 100 includes an exhaust device 51 as an exhaust means for maintaining the inside of the processing container 1 in a vacuum, and a gas supply device as a gas supply means for supplying gas into the processing container 1 ( 71 and a control unit 90 for controlling the film forming apparatus 100. In addition to the silicon substrate, the semiconductor wafer also includes compound semiconductor substrates such as GaAs, SiC, GaN and the like.

<Processing vessel>

The processing container 1 has a substantially cylindrical shape, and is formed of a material such as aluminum, for example, anodized (anodic oxidation). The processing container 1 has an upper wall 1a, a side wall 1b, and a bottom wall 1c.

In the sidewall 1b of the processing container 1, an opening 61 for carrying in and carrying out the wafer W and the raw material tray 33 described later is formed in the processing container 1. On the outer side of the opening 61, a gate valve 62 for opening and closing the opening 61 is provided. In addition, although the structure which carries in and unloads the wafer W and the raw material tray 33 from one opening 61 is shown in FIG. 1, the opening which carries in and unloads the wafer W and the raw material tray 33 are carried in. You may form opening opening separately.

Moreover, in order to ensure the airtightness of the said junction part, the O-ring as a sealing member is arrange | positioned at the junction part of each member which comprises the process container 1. For example, in FIG. 1, the ring-shaped O-ring 81 arrange | positioned at the junction part of the upper wall 1a and the side wall 1b is shown typically. In addition, although O-ring can be arrange | positioned in another site | part, illustration and description are abbreviate | omitted here.

<Substrate heater>

The substrate heater 11 as the first heater that heats the wafer W is disposed above the processing container 1. In the present embodiment, the substrate heater 11 is a resistance heating heater embedded in the heat transfer plate 12. The substrate heater 11 is connected to the heater power supply PS 14 via the feed line 13. The board | substrate heater 11 is comprised so that it can heat to 300 degreeC, for example, in the state which made the wafer W hold | maintained by the holding member 21 to contact with the heat-transfer plate 12. As shown in FIG. In addition, although the heat-transfer plate 12 is made to contact the upper wall 1a of the processing container 1 in FIG. 1, you may leave it apart.

The heat transfer plate 12 has a disk shape similarly to the shape of the wafer W, and is formed of a heat resistant and thermally conductive material such as ceramics. The thermocouple (not shown) as a temperature measuring means is arrange | positioned at the heat transfer plate 12, and the temperature of the board | substrate heater 11 can be measured in real time. In addition, the heating temperature and the processing temperature of the wafer W mean the temperature of the heat exchanger plate 12 unless there is particular notice.

In the present embodiment, the substrate heater 11 and the heat transfer plate 12 constitute a substrate heating means.

<Holding support member>

The holding member 21 as the substrate holder is provided to be movable up and down, and holds the wafer W in a state of being in proximity or in contact with the heat transfer plate 12. The holding member 21 is disposed in a substantially annular shape as a whole, for example, and is formed of a heat resistant material such as ceramics, heat resistant resin, or the like. The holding member 21 contacts the lower surface of the wafer W with a width of several mm from the edge (peripheral corner portion) of the wafer W, and supports the wafer W from below. By covering the periphery of the wafer W with the holding member 21 in this way, deposition of the film which becomes a particle cause in the bevel part of the wafer W can be suppressed. In addition, the holding member 21 may be divided into a plurality of members.

The holding member 21 is supported so that it may be suspended by the ring-shaped movable member 23 provided in the outer upper direction of the processing container 1 by the some suspension support pillar 22 (only two are shown in FIG. 1). have. The suspension support column 22 penetrates through the upper wall 1a of the processing container 1, and the bellows 24 which can be stretched is provided in the circumference | surroundings in order to maintain the airtight state in the processing container 1. . The drive part 25 provided with the actuator which is not shown in figure, and the shaft 26 are provided in the exterior of the processing container 1, and the movable member 23 is connected to the said shaft 26. As shown in FIG. The movable member 23 displaces up and down via the shaft 26 by operating the drive part 25, and raises and lowers the holding member 21 via the suspension support pillar 22. Then, the wafer W held on the holding member 21 is switched between the state in which the lower surface of the heat transfer plate 12 is in contact with the state spaced apart from the lower surface. During the film forming process, the holding member 21 is raised to maintain the wafer W in contact with the lower surface of the heat transfer plate 12. The transfer of the wafer W between the conveying apparatus which is not shown in figure is performed in the state which hold | maintained the holding member 21. As shown in FIG. In addition, as a mechanism for elevating the holding member 21 as a substrate holder, the structure of FIG. 1 provided with the suspension support pillar 22, the movable member 23, the drive part 25, the shaft 26, etc. is where. It is an illustration to the last and is not limited to this.

<Stage>

The stage 31 as the raw material support part is disposed in the lower portion of the processing container 1 facing the substrate heater 11. The stage 31 is supported by the support pillar 32. In the stage 31, the solid raw material A is accommodated in the raw material tray 33 and stacked. The raw material tray 33 is a dish-shaped container with an open upper side, and is made of a material such as quartz, ceramics, etc., having no reactivity with the solid raw material A, and having high heat resistance and high thermal conductivity.

Two kinds of the solid raw material A are considered. One is that although the solid raw material A itself does not vaporize even when heated, it reacts when the vaporization promoting gas B is introduced to produce the film forming raw material gas C having a high vapor pressure. As another solid raw material A, although vapor pressure is low, it is a substance which vaporizes to some extent when it heats. In this case, the vaporization gas vaporized by the solid raw material A becomes "film forming raw material gas".

In the stage 31, openings 31a are formed in plural places (for example, three places; two places are shown in FIG. 1), and lift pins for elevating the raw material tray 33 in each opening 31a. 34 is inserted. Each lift pin 34 is fixed to a ring-shaped movable member 35 provided below the stage 31. The drive part 36 provided with the actuator which is not shown in figure, and the shaft 37 are provided in the outer lower side of the processing container 1, and the movable member 35 is connected to the said shaft 37. As shown in FIG. The shaft 37 penetrates through the bottom wall 1c of the processing container 1, and an elastic bellows 38 is provided around the shaft 37 so as to maintain an airtight state in the processing container 1. The movable member 35 is displaced up and down via the shaft 37 by operating the drive unit 36, and the plurality of lift pins 34 are synchronously raised and lowered. And, the lift pin 34 can switch between the state which protruded from the upper surface of the stage 31, and the state which retracted below and the upper surface. During the film formation process, the lift pins 34 are held at positions not protruding from the upper surface of the stage 31, and the raw material tray 33 is brought into close contact with the stage 31 to efficiently heat the stage 31. To the solid raw material in (33). At the time of delivery of the raw material tray 33, the lift pin 34 is raised, held at the position protruding from the upper surface of the stage 31, and the raw material tray 33 is transferred between the conveying apparatus (not shown). Is done. In addition, it is good also as a structure which transfers the raw material tray 33 directly between the conveying apparatus which is not shown in figure, and the stage 31, without providing the lift pin 34. As shown in FIG.

<Raw material heater>

The raw material heater 41 heats the solid raw material A in the raw material tray 33 loaded in the stage 31. In this embodiment, the raw material heater 41 is a resistance heating heater, and is embedded in the stage 31. The raw material heater 41 is connected to the heater power supply PS 43 via the feed line 42. The raw material heater 41 is comprised so that the solid raw material A can be heated to about 300 degreeC, for example. This raw material heater 41 comprises the raw material heating means which supplies the thermal energy for vaporizing the solid raw material A. As shown in FIG.

In the stage 31, a thermocouple (not shown) as a temperature measuring means is arranged, and the temperature of the stage 31 can be measured in real time. In addition, the heating temperature and processing temperature of a raw material mean the temperature of the stage 31 unless there is particular notice.

<Exhaust device>

The film-forming apparatus 100 of this embodiment is equipped with the exhaust apparatus 51 as exhaust means which performs the pressure reduction exhaust for maintaining the inside of the process container 1 in a vacuum. The exhaust device 51 includes, for example, an automatic pressure regulating valve, a high speed vacuum pump (not shown), and the like, and is configured to evacuate the processing container 1 to evacuate the processing container 1. have. In the upper part of the processing container 1, the exhaust port 52 which is an exhaust part connected to the exhaust apparatus 51 is provided. By providing the exhaust port 52 in the upper portion of the processing container 1 adjacent to the wafer W, the film formation efficiency can be improved. Here, "the upper part of the processing container 1" means an upper position than the upper surface of the stage 31 which supports the raw material tray 33 which accommodates the solid raw material A. As shown in FIG. Therefore, the exhaust port 52 may be provided in the side wall 1b of the processing container 1. However, it is preferable to provide the exhaust port 52 above the wafer W held by the holding member 21 so as to form a smooth flow of the film forming raw material gas in the processing container 1. In the film-forming apparatus 100 of FIG. 1, the exhaust port 52 is provided in the upper wall 1a. An exhaust device 51 is connected to the exhaust port 52 through an exhaust pipe 53. In addition, in this embodiment, although the exhaust apparatus 51 forms one component part of the film-forming apparatus 100, you may mount and use an external type | mold exhaust apparatus separately from the film-forming apparatus 100. FIG.

In the upper part of the processing container 1, the baffle plate 54 for uniformly exhausting is provided. The baffle plate 54 is formed in a substantially annular shape around the heat transfer plate 12. In addition, the baffle plate 54 is arrange | positioned so that it may become the surface of substantially the same height as the lower surface (surface to be processed) of the wafer W supported by the holding member 21. The baffle plate 54 has many through-holes 54a, and arranges the airflow toward the exhaust port 52 so that the inside of the processing container 1 is exhausted evenly.

<Gas supply device>

The film-forming apparatus 100 of this embodiment is further provided with the gas supply apparatus 71 as a gas supply means which supplies the vaporization promoting gas into the processing container 1. The gas introduction port 72 which is a gas introduction part connected to the gas supply apparatus 71 is provided in the lower part of the processing container 1. Here, "the lower part of the processing container 1" means a position below the upper surface of the stage 31 which supports the raw material tray 33 which accommodates the solid raw material A. As shown in FIG. By providing the gas inlet 72 below the processing container 1, a smooth flow of the film forming raw material gas is formed in the processing container 1. Therefore, although the gas introduction port 72 may be provided in the side wall 1b of the processing container 1, it is preferable to provide in the bottom wall 1c like the film-forming apparatus 100 of FIG. The gas supply device 71 is connected to the gas inlet 72 via a gas supply pipe 73.

The gas supply device 71 may have one or more gas supply sources, a flow control device, a valve, a vaporizer, a solvent tank, and the like, which are not shown, but illustration and description are omitted here. The gas supply source may include a vaporization promoting gas having a reactivity with the solid raw material A or a source of film formation promoting gas reacting with the film forming raw material gas, and for example, cleaning the rare gas or the inside of the processing container 1. And a supply source such as a purge gas for purifying the atmosphere in the processing container 1. These gases are supplied into the processing container 1 through the gas supply pipe 73 and the gas introduction port 72. In addition, although one gas supply pipe 73 is shown in FIG. 1, it may be more than one. The vaporization promoting gas is a gas that reacts with the solid raw material A to generate the film forming raw material gas. For example, formic acid (HCOOH), carbon monoxide (CO), phosphorus trifluoride (PF ₃ ), 1, 1, 1, 5, 5 Preference is given to using gases such as, 5-hexafluoro-2, 4-pentanedione (H (hfac)) and the like. In addition, where hfac is 1, 1, 1, 5, 5, 5-hexafluoro-2, 4-pentanedionate. Although the film formation promoting gas does not react with the solid raw material A, it is a gas that reacts with the film forming raw material gas to promote film formation, and examples thereof include H ₂ . In this embodiment, although the gas supply apparatus 71 forms one component part of the film-forming apparatus 100, you may attach and use an external gas supply apparatus separately from the film-forming apparatus 100. FIG.

<Control section>

Each component part (for example, heater power supply 14, heater power supply 43, exhaust device 51, gas supply device 71, etc.) which comprises the film-forming apparatus 100 is connected to the control part 90 The configuration is controlled. The structural example of the control system in the film-forming apparatus 100 is shown in FIG. The control unit 90 which is a computer includes a controller 91 having a CPU, a user interface 92 and a storage unit 93 connected to the controller 91. The user interface 92 includes a keyboard for performing a command input operation or the like for the process manager to manage the film forming apparatus 100, a display for visualizing and displaying the operation status of the film forming apparatus 100, and the like. The storage unit 93 stores recipes in which control programs (software), processing condition data, and the like, for realizing various processes executed in the film forming apparatus 100 are controlled by the controller 91. Then, if necessary, an arbitrary control program or recipe is called from the storage unit 93 and executed by the controller 91 by an instruction from the user interface 92 or the like, so that the film forming apparatus under the control of the controller 91 ( The desired processing is performed in the processing container 1 of 100.

Recipes such as the control program and the processing condition data can also be used by installing the storage unit 93 in a state stored in the computer-readable recording medium 94. Although there is no restriction | limiting in particular as the computer-readable recording medium 94, For example, CD-ROM, a hard disk, a flexible disk, a flash memory, DVD, etc. can be used. In addition, the said recipe can also be sent online from another apparatus from time to time via a dedicated line, for example.

<Procedures and Deposition Methods for Deposition>

Next, the procedure and the film-forming method of the film-forming process in the film-forming apparatus 100 are demonstrated. In the film forming apparatus 100, the film forming process is performed based on the control of the control unit 90. Specifically, first, in a state in which the gate valve 62 is opened, the raw material tray 33 in which the solid raw material A is stored from the opening 61 is protruded from the stage 31 by a conveying device (not shown). The transfer pin 34 is transferred to the lift pin 34, and then the lift pin 34 is lowered to load the raw material tray 33 on the stage 31. As a result, the solid raw material A is set in the stage 31. In the state where the gate valve 62 is opened, the wafer W is loaded into the processing container 1 from the opening 61 by a conveying device (not shown) and transferred to the holding member 21. Next, the holding member 21 is raised to clamp the periphery of the wafer W to fix the wafer W in close contact with the heat transfer plate 12 having the substrate heater 11 therein.

Next, the gate valve 62 is closed and the exhaust device 51 is operated to vacuum the inside of the processing container 1. At this time, vacuum is gradually performed so that the solid raw material A in the raw material tray 33 does not scatter. Then, the wafer W is heated by the substrate heater 11, and the solid raw material A in the raw material tray 33 is heated by the raw material heater 41.

(Film forming method)

Here, two typical film forming methods performed using the film forming apparatus 100 of the present embodiment will be described with reference to FIGS. 3 and 4. 3 and 4 show only a configuration of a part of the film forming apparatus 100 in a simplified manner.

(First method; Chemical reaction vaporization method)

The first method is effective when the vapor pressure of the solid raw material A is very low and hardly vaporizes only by heating. This method supplies the vaporization promoting gas B which is reactive with the solid raw material A from the gas supply apparatus 71 through the gas inlet 72 while heating the solid raw material A as shown in FIG. And film-forming raw material gas C is produced | generated by reaction of solid raw material A and vaporization promotion gas B. FIG. This film-forming raw material gas C is made to react on the to-be-processed surface of the wafer W, and a thin film is produced. The reaction on the surface of the wafer W in this case is mainly a thermal decomposition reaction. That is, it is a reaction which the film-forming raw material gas C thermally decomposes on the to-be-processed surface of the wafer W heated at the high temperature by the substrate heater 11, and forms a thin film. As a representative example of such a reaction, the solid raw material A is anhydrous dibasic copper formate (Cu (HCOO) ₂ ), the vaporization promoting gas B is formic acid (HCOOH), and the film forming raw material C is first copper formate (Cu (HCOO)). May be mentioned. In addition, as another combination, for example,

(1) when solid raw material A is nickel metal powder, vaporization promoting gas B is carbon monoxide (CO), and film forming raw material gas C is Ni (CO) ₄ ;

(2) when solid raw material A is tungsten metal powder, vaporization promoting gas B is carbon monoxide (CO), and film forming raw material gas C is W (CO) ₆ ;

(3) the case where the solid raw material A is ruthenium metal powder, the vaporization promoting gas B is carbon monoxide (CO), and the film forming raw material C is Ru 3 (CO) ₁₂ ;

(4) The case where the solid raw material A is a platinum metal powder, the vaporization promoting gas B is phosphorus trifluoride (PF ₃ ), and the film-forming raw material gas C is Pt (PF ₃ ) ₄ is mentioned.

(2nd method; Simple heating vaporization method)

Although the vapor pressure of the solid raw material A is low, the 2nd method is effective when it can vaporize by heating. In this method, as illustrated in FIG. 4, the solid raw material A is heated to generate a vaporized gas A ', and the vaporized gas A' is disposed on the lower surface of the wafer W held by the holding member 21 (feature). Surface), and react on the surface of the wafer W to form a thin film. Reaction in this case is a thermal decomposition reaction which generate | occur | produces mainly on the surface of the wafer W heated at high temperature. That is, the vaporization gas A 'produced | generated by the solid raw material A of the stage 31 heated by the raw material heater 41 is film-forming raw material gas, and heat | fever on the to-be-processed surface of the wafer W heated by the substrate heater 11 It decomposes and forms a thin film. Examples of such solid materials performing the film formation by thermal decomposition, such as tungsten carbonyl (W (CO) _6), cobalt carbonyl with a metal carbonyl compound, nickel di-hexafluoro such as (Co ₂ (CO) ₈₎ Acetyl acetone (Ni (hfac) ₂ ) is mentioned.

In the film-forming apparatus 100 of FIG. 1, the gas introduction port 72 is provided in the bottom wall 1c of the processing container 1, and the gas exhaust port 52 is provided in the upper wall 1a of the processing container 1, respectively. Then, it was set as the structure connected to the gas supply apparatus 71 and the exhaust apparatus 51. With this arrangement, in the first method (FIG. 3), the flow direction of the vaporization promoting gas B supplied from the gas supply device 71 through the gas inlet 72, which is the counterpart to react with the solid raw material A, is changed. In general, the direction is from the bottom to the top. Therefore, the flow chart of the film forming raw material gas C generated by the reaction between the solid raw material A and the vaporization promoting gas B becomes almost the same, and the film forming raw material gas C is placed on the surface of the wafer W disposed near the exhaust port 52. It can supply efficiently. In the second method (FIG. 4), since the upward flow of the vaporization gas A 'from the solid raw material A of the raw material tray 33 forms a flow of the gas toward the exhaust port 52 as it is, The vaporization gas A 'which is a film-forming raw material gas can be supplied efficiently toward the wafer W arrange | positioned near the exhaust port 52, without generating disturbance.

As described above, a desired thin film can be formed on the lower surface of the wafer W held by the holding member 21. When the film forming process is completed, the pressure in the processing container 1 is gradually increased so that the solid raw material A in the raw material tray 33 does not scatter, and the gate valve 62 is opened at the stage where the predetermined pressure is reached. The wafer W is unloaded from the opening 61 by a conveyance device that is not provided. The film forming process in the film forming apparatus 100 is performed based on the recipe stored in the storage unit 93 of the control unit 90. The controller 91 reads the recipe and sends a control signal to each component of the film forming apparatus 100, whereby the film forming process is performed under desired conditions.

<Action>

In the film-forming apparatus 100 of this embodiment, since the solid raw material A is arrange | positioned on the stage 31 in the processing container 1, the film-forming raw material gas (solid raw material A reacts with the vaporization promotion gas B, and is produced | generated. C or vaporized gas A 'of the solid raw material A) can be produced in the processing vessel. Thus, since there is no piping between the solid raw material A and the wafer W to be formed, the film forming raw material C or vaporized gas A 'is stably held on the surface of the wafer W without being trapped during transportation. Can supply In addition, since the solvent for gasifying the solid raw material A is not used, the incorporation of impurities in the film is unlikely to occur, and the device configuration can be simplified because no liquid vaporizer is required. In addition, in the film-forming apparatus 100, since the solid raw material A is accommodated using the raw material tray 33, it is possible to carry in and carry out solid raw material A with the normal conveying apparatus which conveys the wafer W, The solid raw material A can also be easily exchanged.

Moreover, in the film-forming apparatus 100 of this embodiment, the film-forming raw material gas is arrange | positioned facing the upper direction of the solid raw material A arrange | positioned at the stage 31 with the film-forming target surface (processing surface) of the wafer W facing down. Film formation by vaporization gas A 'of C and solid raw material A is performed efficiently, and the uniformity of the process in surface inside of the wafer W improves. Moreover, since the to-be-processed surface of the wafer W faces downward, it can also suppress that a particle adheres to the to-be-processed surface of the wafer W. FIG.

[Modifications]

Next, the modification of the film-forming apparatus 100 is demonstrated, referring FIGS. 5-8. 5-8, the structure other than the characteristic part of each modification is abbreviate | omitted suitably for convenience of description. In addition, about the structure similar to FIG. 1, the same code | symbol is attached | subjected and description is abbreviate | omitted.

The film-forming apparatus 100A of FIG. 5 is a 1st modification which provided the gas introduction port 72 as a gas introduction part in the side of the processing container 1. Here, the "side part of the processing container 1" means the vicinity of the center of the height direction of the side wall 1b, and specifically, in the side wall 1b, the raw material tray 33 which accommodates the solid raw material A is mentioned. It means a position above the upper surface of the stage 31 to support and below the wafer W held by the holding member 21. Thus, in the film-forming apparatus 100A which provided the gas introduction port 72 in the side wall 1b, the exhaust port 52 is provided in the upper wall 1a similarly to FIG. On the other hand, the film-forming apparatus 100B of FIG. 6 has the 2nd modified example which provided the exhaust port 52 in the bottom wall 1c, and provided the gas introduction port 72 in the side part of the processing container 1 similarly to FIG. to be. In FIG. 6, the baffle plate 54 is provided in the surface of substantially the same height as the upper surface of the stage 31. As shown in FIG. As illustrated in FIGS. 5 and 6, when the gas inlet 72 is provided on the side of the processing container 1, the gas inlet 72 is performed when the first method (chemical reaction vaporization method) is performed. It is advantageous because the vaporization promoting gas B introduced therefrom can be easily brought into contact with the solid raw material A accommodated in the raw material training 33. Thus, the arrangement | positioning of the gas introduction part and exhaust part in the film-forming apparatus 100 can be variously modified. In order to increase the film formation efficiency, the exhaust port 52 is preferably provided close to the wafer (W). In particular, in the case of performing the first method (chemical reaction vaporization method), for example, as shown in FIGS. 1, 5, and 6, a facing space between the wafer W and the solid raw material A is sandwiched inside. It is preferable to arrange | position the gas introduction port 72 and the exhaust port 52 so that the flow may be carried out, and the flow of vaporization promoting gas B may pass through the said opposing space. In addition, in the modification of FIG. 5 and FIG. 6, although the gas introduction port 72 is an opening which penetrates the side wall 1b, a nozzle may be provided in the gas introduction part, for example, and the said nozzle is looped. It is also possible to arrange | position in a shape and to introduce gas uniformly from the whole inner periphery of the side wall 1b.

The film-forming apparatus 100C of FIG. 7 is a 3rd modified example provided with the drive mechanism which rotates the stage 31 to a horizontal direction in the state which mounted the raw material tray 33 which accommodated the solid raw material A. As shown in FIG. In this film-forming apparatus 100C, the rotation drive part 39 which has a motor etc. is connected to the support pillar 32, and the stage 31 is rotated horizontally using the support pillar 32 as a rotation axis. Can be. Rotating the stage 31 causes the flow of the film forming raw material gas C generated by the reaction between the solid raw material A and the vaporization promoting gas B and the vaporization gas A 'generated from the solid raw material A to be biased into the processing container 1. This disappears. As a result, the film-forming raw material gas C and vaporization gas A 'can be equally supplied to the lower surface of the wafer W held by the holding member 21. Therefore, the uniformity of the film-forming film thickness in the surface of the wafer W can be improved.

In the film-forming apparatus 100D of FIG. 8, the fourth modified example in which the shutter 110 is provided between the raw material tray 33 stacked on the stage 31 and the wafer W supported on the holding member 21. to be. For example, in the said 1st method (chemical reaction vaporization method), time to which film-forming raw material C is supplied to the surface of the wafer W by the introduction time of the vaporization promoting gas B from the gas supply apparatus 71 ( That is, it is possible to control the time when the film forming reaction occurs), but more precise time management may be required in some cases. In addition, in the said 2nd method (simple heat vaporization method), when the solid raw material A is heated in the stage 31, it vaporizes gradually and produces vaporization gas A '. For this reason, it may be difficult to accurately manage the time for which the vaporization gas A 'is supplied to the surface of the wafer W. From the above, it is preferable to be able to control the time for supplying the vaporization gas A 'from the film forming raw material gas C or the solid raw material A to the surface of the wafer W. Therefore, in the film-forming apparatus 100D of FIG. 8, when the shutter 110 is provided and the shutter 1110 is closed, film-forming raw material gas C and vaporization gas A 'are interrupted | blocked, and the wafer W is substantially carried out. It is not supplied.

The shutter 110 is provided with the slide plates 111 (111A, 111B) provided in multiple steps (for example, two steps), and the drive part 112 which advances and retracts this slide plate 111. As shown in FIG. By operating the drive part 112, the slide plates 111A and 111B advance to the position above the raw material tray 33 in the processing container 1, or evacuate from the position. In addition, you may comprise the slide plate 111 by one sheet. The slide plate 111 penetrates the side wall 1b of the processing container 1, and an elastic bellows 113 is provided around the periphery thereof in order to maintain an airtight state in the processing container 1. In the film-forming apparatus 100D, the gate valve 62 is opened in the state which closed the shutter 110, and the wafer W is carried in into the processing container 1. Next, the gate valve 62 is closed, the wafer W is held by the holding member 21, and preheated by the substrate heater 11 in the heat transfer plate 12. In addition, the solid raw material A in the raw material tray 33 of the stage 31 is heated by the raw material heater 41. In the first method (chemical reaction vaporization method), the shutter is formed until the film forming raw material gas C generated by the reaction between the vaporization promoting gas B and the solid raw material A from the gas supply device 71 reaches a predetermined concentration. When 110 is closed and the predetermined concentration is reached, the shutter 110 is opened for a predetermined time to supply the deposition source gas C to the surface of the wafer W. In the second method (simple heating vaporization method), the shutter 110 is closed until the vaporization gas A 'from the solid raw material A reaches a predetermined concentration, and is constant at a step of reaching the predetermined concentration. The time shutter 110 is opened to supply the vaporization gas A 'from the solid raw material A to the surface of the wafer W. As shown in FIG. In any case, after the predetermined time has elapsed, the film forming process for one wafer W is terminated by closing the shutter 110, opening the gate valve 62, and ejecting the wafer W. . Thus, by opening and closing the shutter 110, the supply time and the total supply amount of the vaporization gas A 'from the film-forming raw material gas C or the solid raw material A to the surface of the wafer W can be precisely controlled.

As mentioned above, the film-forming apparatus of this embodiment can be variously modified. In addition, each said modification can be combined in the range which does not impair the effect of this invention. For example, in the modification illustrated in FIGS. 5 and 6, the stage 31 may be rotated as in the modification illustrated in FIG. 7, and the shutter 110 is provided as in the modification illustrated in FIG. 8. You may also In addition, in the modification shown in FIG. 8, you may rotate the stage 31 similarly to the modification shown in FIG.

&Lt; Second Embodiment >

Next, a second embodiment of the present invention will be described. 9 is a cross-sectional view showing a schematic configuration of the film forming apparatus 101 according to the second embodiment. In this embodiment, a lamp heater is used as a means of heating the solid raw material A. FIG. In addition, in the following description, it demonstrates centering on the characteristic structure of the film-forming apparatus 101 of FIG. 9, and attaches | subjects the same code | symbol to the structure similar to the film-forming apparatus 100 of FIG. Omit the description.

The film-forming apparatus 101 of this embodiment is installed as a raw material support part, for example from the movable member 121 which can carry out the ring shape, and this movable member 121, and is provided in the bottom face of the raw material tray 33. A plurality of (only two) support protrusions 122 to contact and support, a shaft 123 for elevating the movable member 121, and a drive unit 124 for driving the shaft 123 are provided. Both the movable member 121 and the support protrusion 122 are comprised by the material which permeate | transmits a heating wire, for example, quartz. The drive part 124 is provided below the process container 1 outside. The movable member 121 and the drive unit 124 are connected by the shaft 123. The shaft 123 penetrates through the bottom wall 1c of the processing container 1, and an elastic bellows 125 is provided around the periphery thereof in order to maintain an airtight state in the processing container 1. By moving the movable member 121 up and down by the drive part 124 via the shaft 123, the height which hold | maintains the raw material tray 33 by the support protrusion 122 can be adjusted. Therefore, for example, the transfer of the raw material tray 33 between the conveying apparatus which is not shown in figure, or the space | interval (gap G) of the solid raw material A in the raw material tray 33 during the film-forming process, and the wafer W is carried out. It is configured to be adjusted arbitrarily.

In addition, a lamp unit 131 is provided at the bottom of the processing container 1 immediately below the movable member 121. The lamp unit 131 includes a partition wall 132 for partitioning its outer edge, a transmission window 133 made of a material that transmits a heat ray such as quartz, etc. supported by the partition wall 132, and a transmission window ( A plurality of heat lamps 134 as raw material heating means disposed below 133 are provided. The hot wire emitted from the heating lamp 134 penetrates the transmission window 133 and irradiates the lower surface of the raw material tray 33 to heat the solid raw material A contained in the raw material tray 33.

In the film-forming apparatus 101 of this embodiment, since the solid raw material A is heated using the lamp unit 131 which has the heating lamp 134 excellent in the response of heating / low temperature by switching on / off. The heating rate of the raw material is fast and the solid raw material A can be heated in a short time. Therefore, the throughput of the entire film forming process can be improved, and the control of the heating temperature of the solid raw material A is also facilitated. In addition, in the film-forming apparatus 101 of this embodiment, the several support protrusion 122 of the movable member 121 provided so that the lifting-up displacement can function as a raw material support part which supports the raw material tray 33, and a conveying apparatus ( It has a function as a lift pin at the time of conveying the raw material tray 33 between them), and it is possible to reduce the number of parts and simplify the device configuration.

Moreover, in the film-forming apparatus 101, by supporting the raw material tray 33 in the point contact state by the support protrusion 122 of the movable member 121, the heat from the lamp unit 131 directly transfers the raw material tray ( It can convey to the back surface of 33), and the heating efficiency of solid raw material A can be improved.

In the film forming apparatus 101, the gap G can be arbitrarily set by changing the setting of the height position of the support protrusion 122 of the movable member 121 during the film forming process. Therefore, by finely adjusting and optimizing the gap G according to the type of the solid raw material A, the type of the vaporization promoting gas B (if necessary), the flow rate, the processing pressure, etc., the film forming efficiency is increased or the wafer W It is possible to improve the uniformity of the treatment in-plane / inter-plane.

<Modifications>

Next, the modification of the film-forming apparatus 101 is demonstrated, referring FIG. In addition, in FIG. 10, about the structure similar to FIG. 9, the same number is attached | subjected and description is abbreviate | omitted. In the film-forming apparatus 101 of FIG. 9, although the resistance heating type | mold board heater 11 was built in the heat-transfer plate 12, and the wafer W was heated, instead of the resistance heating type | mold board heater 11, You may provide the lamp unit 141 like the film-forming apparatus 101A shown in FIG. The lamp unit 141 includes a partition wall 142 for partitioning the outer edge thereof, a transmission window 143 made of a material that transmits a heat ray such as quartz, etc. supported by the partition wall 142, and a transmission window ( A plurality of heat lamps 144 as raw material heating means disposed above 143 are provided. The hot wire emitted from the heating lamp 144 passes through the transmission window 143 and is irradiated onto the upper surface (rear surface) of the wafer W, so that the wafer W can be heated to a predetermined temperature. In addition, although the wafer W was kept in contact with the transmission window 143 by the holding member 21 in FIG. 10, the height of the holding member 21 is adjusted and the wafer W is permeable. It may be kept spaced apart from the window 143.

Other configurations and effects in the film forming apparatuses 101 and 101A of the present embodiment are the same as in the first embodiment. In addition, also in this embodiment, the modified example as illustrated in FIG. 5, FIG. 6, and FIG. 8 can be applied similarly to 1st Embodiment, and the above-mentioned effect is acquired.

[Third embodiment]

Next, a third embodiment of the present invention will be described. 11 is a cross-sectional view showing a schematic configuration of a film forming apparatus 102 according to the third embodiment. In addition, in the following description, it demonstrates centering on the characteristic structure of the film-forming apparatus 102 of FIG. 11, and attaches the same code | symbol to the structure similar to the film-forming apparatus 100 of FIG. Omit the description. In the film forming apparatus 102 of the present embodiment, the wafer W is held by the electrostatic adsorption mechanism. An electrostatic chuck 151 as a substrate holder is embedded in the heat transfer plate 12 disposed above the processing container 1. The electrostatic chuck 151 has a structure in which an electrode layer (not shown) is sandwiched between dielectric layers, and the electrode layer is connected to the DC power supply 153 through a feed line 152. Then, by applying a DC voltage to the electrostatic chuck 151, the electrostatic chuck 151 electrostatically attracts the wafer W by the coulomb force and fixes it to the lower surface of the heat transfer plate 12. In addition, the fixing of the wafer W can be released by stopping the application of the voltage from the DC power supply 153 to the electrostatic chuck 151.

As described above, in the present embodiment, since the electrostatic chuck 151 is provided as the substrate holder, the wafer W can be held in a simple configuration.

Like the film forming apparatus 102A illustrated in FIG. 12, in addition to the electrostatic chuck 151, and similarly to FIG. 1, the holding member 21, the suspension supporting column 22, the movable member 23, and the driving unit ( 25) may be provided with a holding mechanism having a back or the like. That is, in the film deposition apparatus 102A, the substrate holder includes an electrostatic chuck 151 and a holding member 21. In this case, the electrostatic chuck 151 may be mainly used, and the holding member 21 may be vertical (auxiliary) to hold the wafer W, or the holding member 21 may be mainly used to hold the electrostatic chuck 151. ), The wafer W may be held.

The other structure and effect in the film-forming apparatus 102 and 102A of this embodiment are the same as that of 1st Embodiment. Also in the present embodiment, similarly to the first embodiment, for example, modifications such as those illustrated in Figs. 5, 6, 7 and 8 can be applied, and the above-described effects can be obtained. In the film forming apparatuses 102 and 102A, a lamp unit may be arranged similarly to the second embodiment.

Example

Next, although an Example is given and this invention is demonstrated in detail, this invention is not limited by the following example.

&Lt; Embodiment 1 >

As solid raw material A, powder of anhydrous dibasic copper formate (Cu (HCOO) ₂ ) was used. Using the film forming apparatus 100B having the same configuration as that in FIG. 6, N ₂ gas was used as a purge gas from the gas supply device 71 to the processing container 1 through the gas inlet 72. 100 mL / min (sccm) The raw material A contained in the raw material tray 33 on the stage 31 was heated to 130 degreeC after introducing into the flow volume of this, and adjusting the pressure to 13.3 kPa (100 mTorr) by APC (Auto Pressure Controller). At the same time, the silicon substrate held by the holding member 21 was heated to 150 ° C. in a state of being in close contact with the heat transfer plate 12. Thereafter, the supply of the N ₂ gas was stopped, and the formic acid (HCOOH) gas, which is the vaporization promoting gas B, was introduced from the gas supply device 71 through the gas inlet 72 at a flow rate of 100 mL / min (sccm). In the meantime, the pressure was maintained at 13.3 kPa (100 mTorr). When HCOOH gas was flowed for 10 minutes, and a silicon substrate was taken out after that, the metal copper film was formed into a film thickness of about 100 nm on the surface of a silicon substrate. In the metallic copper film, the second anhydrous copper formate (Cu (HCOO) ₂ ) of the solid raw material A reacts with formic acid (HCOOH) of the vaporization promoting gas B to generate first copper formate (Cu (HCOO)) as the film forming raw material C. The first copper formate (Cu (HCOO)) is formed by thermal decomposition on the surface of the silicon substrate. Thus, it was confirmed that the film-forming apparatus 100B can form a metal copper film efficiently using the solid raw material A. As shown in FIG. In the present embodiment, since the solid raw material A is heated by the stage 31 in the processing container 1, mixing of the solvent into the trap or the metal copper film due to solidification during the raw material supply does not occur, and particle contamination does not occur. .

As mentioned above, although the objective of illustrating embodiment of this invention was described in detail, this invention is not restrict | limited to the said embodiment. Those skilled in the art can make many modifications without departing from the spirit and scope of the invention, and they are included within the scope of the invention. For example, in the above embodiment, a film forming apparatus using a semiconductor wafer as a processing target has been described as an example, but the present invention can also be applied to a film forming apparatus using a glass substrate, a ceramic substrate, or the like as a processing target. have.

1: Processing vessel
1a: upper wall
1b: sidewall
1c: bottom wall
11: substrate heater
12: electrothermal plate
13: feeder
14: heater power
21: holding member
22: suspension support column
23: movable member
24: bellows
25:
26: Shaft
31: stage
32: support column
33: raw material tray
34: lift pin
35: movable member
36 drive unit
37: shaft
38: bellows
41: raw material heater
42: feeder
43: heater power
51: exhaust device
52: exhaust port
53: exhaust pipe
54: baffle plate
54a: through hole
61: aperture
71: gas supply device
72 gas inlet
73: gas supply pipe
81: O-ring
90:
91: controller
92: user interface
93: memory
94: recording medium
100: Deposition device
W: Wafer

Claims (16)

A processing container for accommodating a substrate;
A substrate holder for holding a substrate above the processing container;
A first heater for heating the substrate held in the substrate holder;
A raw material support disposed below the substrate held by the substrate holder;
A second heater for heating the solid raw material supported by the raw material support part;
Gas supply means for supplying a vaporization promoting gas to react with the solid raw material to generate a film forming raw material gas in the processing container;
Exhaust means for maintaining a vacuum in the processing vessel
And,
The film-forming apparatus which thermally decomposes the film-forming raw material gas produced | generated in the said processing container on the surface of a board | substrate, and performs film-forming. A processing container for accommodating a substrate;
A substrate holder for holding a substrate above the processing container;
A first heater for heating the substrate held in the substrate holder;
A raw material support disposed below the substrate held by the substrate holder;
A second heater for heating the solid raw material supported by the raw material support part;
Exhaust means for maintaining a vacuum in the processing vessel
And,
The film-forming apparatus which heat-deposits the vaporization gas produced | generated in the said processing container on the surface of a board | substrate by heating the said solid raw material, and performs film-forming. The film-forming apparatus of Claim 1 or 2 in which the said board | substrate holder hold | maintains a board | substrate so that the lower surface of a board | substrate may become a to-be-processed surface which performs a film-forming process. The film-forming apparatus of Claim 1 or 2 in which the said solid raw material is accommodated and supported in the dish-type container opened upward in the said raw material support part. The film-forming apparatus of Claim 1 or 2 in which the exhaust part connected to the said exhaust means is provided in the upper part of the said processing container. The film-forming apparatus of Claim 5 with which the gas introduction part connected to the said gas supply means is provided in the lower part of the said processing container. The film-forming apparatus of Claim 5 with which the gas introduction part connected to the said gas supply means is provided in the side part of the said processing container. A processing container for accommodating a substrate;
A substrate holder for holding a substrate above the processing container;
A first heater for heating the substrate held in the substrate holder;
A raw material support disposed below the substrate held by the substrate holder;
A second heater for heating the solid raw material supported by the raw material support part;
Gas supply means for supplying gas into the processing container;
Exhaust means for maintaining a vacuum in the processing vessel
Using a film forming apparatus equipped with
Placing a solid raw material into the processing container and arranging the raw material support part;
Carrying a substrate into the processing container and holding the substrate by the substrate holder;
The film-forming raw material gas produced by reacting the solid raw material supported by the said raw material support part with the other vaporization promoting gas introduced into the said processing container by the said gas supply means, heating with the said 2nd heater, The surface of the said board | substrate The film-forming method which has a process of supplying to a film, and thermally decomposing and forming into a film. A processing container for accommodating a substrate;
A substrate holder for holding a substrate above the processing container;
A first heater for heating the substrate held in the substrate holder;
A raw material support disposed below the substrate held by the substrate holder;
A second heater for heating the solid raw material supported by the raw material support part;
Gas supply means for supplying gas into the processing container;
Exhaust means for maintaining a vacuum in the processing vessel
Using a film forming apparatus equipped with
Placing a solid raw material into the processing container and arranging the raw material support part;
Carrying a substrate into the processing container and holding the substrate by the substrate holder;
And a step of heating and vaporizing the solid raw material supported by the raw material support part by the second heater, supplying the vaporized gas to the surface of the substrate, and thermally decomposing the film. The film formation method according to claim 8 or 9, wherein the film formation is performed on the lower surface of the substrate held by the substrate holder. The film-forming apparatus of Claim 6 with which the said exhaust part is arrange | positioned above a said board | substrate. The film-forming apparatus of Claim 1 or 2 which is a non-compartment space between the said raw material support part and the said board | substrate. The method of claim 1, wherein the gas supply means also supplies a film formation promoting gas to react with the film forming raw material gas in the processing vessel, and the solid raw material is anhydrous secondary copper formate (Cu (HCOO) ₂ ), nickel metal powder, tungsten Metal powder, ruthenium metal powder, platinum metal powder is any one, the gas for promoting gas is formic acid (HCOOH), carbon monoxide (CO), phosphorus trifluoride (PF ₃ ), 1, 1, 1, 5, 5, 5- The film forming apparatus of any one of hexafluoro-2 and 4-pentanedioonate, and the film formation promoting gas is H ₂ . The gas supply means for supplying the film formation promoting gas which reacts with the said vaporization gas in a process container, The said solid raw material is a tungsten carbonyl (W (CO) ₆ ) and cobalt carbonyl (Co). ₂ (CO) ₈ ), nickel dihexafluoro acetyl acetone (Ni (hfac) ₂ ), and the film formation promoting gas is H ₂ . The film-forming apparatus of Claim 1 or 2 in which the shutter was provided between the raw material support part and the board | substrate. The film-forming apparatus of Claim 1 or 2 provided with the drive mechanism which rotates a raw material support part in a horizontal direction.

Images