KR101295414B1 - 다계조 포토마스크의 제조 방법 및 패턴 전사 방법 - Google Patents

다계조 포토마스크의 제조 방법 및 패턴 전사 방법 Download PDF

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Publication number
KR101295414B1
KR101295414B1 KR1020110049145A KR20110049145A KR101295414B1 KR 101295414 B1 KR101295414 B1 KR 101295414B1 KR 1020110049145 A KR1020110049145 A KR 1020110049145A KR 20110049145 A KR20110049145 A KR 20110049145A KR 101295414 B1 KR101295414 B1 KR 101295414B1
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KR
South Korea
Prior art keywords
film
resist pattern
resist
pattern
light shielding
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KR1020110049145A
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English (en)
Korean (ko)
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KR20110128753A (ko
Inventor
스스무 나가시마
Original Assignee
호야 가부시키가이샤
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Publication of KR20110128753A publication Critical patent/KR20110128753A/ko
Application granted granted Critical
Publication of KR101295414B1 publication Critical patent/KR101295414B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020110049145A 2010-05-24 2011-05-24 다계조 포토마스크의 제조 방법 및 패턴 전사 방법 KR101295414B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010118556 2010-05-24
JPJP-P-2010-118556 2010-05-24

Publications (2)

Publication Number Publication Date
KR20110128753A KR20110128753A (ko) 2011-11-30
KR101295414B1 true KR101295414B1 (ko) 2013-08-09

Family

ID=45009037

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110049145A KR101295414B1 (ko) 2010-05-24 2011-05-24 다계조 포토마스크의 제조 방법 및 패턴 전사 방법

Country Status (4)

Country Link
JP (1) JP2012008546A (ja)
KR (1) KR101295414B1 (ja)
CN (1) CN102262354B (ja)
TW (1) TWI454834B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6063650B2 (ja) * 2012-06-18 2017-01-18 Hoya株式会社 フォトマスクの製造方法
JP6157832B2 (ja) * 2012-10-12 2017-07-05 Hoya株式会社 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
KR102206114B1 (ko) * 2014-02-10 2021-01-22 에스케이하이닉스 주식회사 열흡수 억제를 위한 블랭크 마스크 및 포토마스크
JP6481994B2 (ja) * 2014-10-23 2019-03-13 東京エレクトロン株式会社 画素電極のパターン形成方法および形成システム
JP6391495B2 (ja) * 2015-02-23 2018-09-19 Hoya株式会社 フォトマスク、フォトマスクセット、フォトマスクの製造方法、及び表示装置の製造方法
JP6514143B2 (ja) * 2016-05-18 2019-05-15 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
US20220390833A1 (en) * 2021-06-03 2022-12-08 Viavi Solutions Inc. Method of replicating a microstructure pattern

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980048859A (ko) * 1996-12-18 1998-09-15 김광호 위상반전 마스크 제조방법
JP2001183809A (ja) * 1999-12-24 2001-07-06 Nec Corp フォトマスク及びフォトマスク製造方法
KR100312995B1 (ko) * 1998-08-31 2001-11-03 마찌다 가쯔히꼬 하프톤 마스크의 제조공정
JP2005010814A (ja) * 2004-10-01 2005-01-13 Hoya Corp グレートーンマスク及びその製造方法
KR100802450B1 (ko) * 2006-04-12 2008-02-13 엘지마이크론 주식회사 다중 반투과부를 구비한 하프톤 마스크 및 그 제조방법
KR20090074564A (ko) * 2008-01-02 2009-07-07 주식회사 하이닉스반도체 하프톤 위상반전마스크 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002189281A (ja) * 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
JP3470758B2 (ja) * 2001-05-21 2003-11-25 凸版印刷株式会社 半導体集積回路及びその製造方法
JP4210166B2 (ja) * 2003-06-30 2009-01-14 Ｈｏｙａ株式会社 グレートーンマスクの製造方法
JP5319193B2 (ja) * 2008-07-28 2013-10-16 Ｈｏｙａ株式会社 液晶表示装置製造用多階調フォトマスク、液晶表示装置製造用多階調フォトマスクの製造方法及びパターン転写方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980048859A (ko) * 1996-12-18 1998-09-15 김광호 위상반전 마스크 제조방법
KR100312995B1 (ko) * 1998-08-31 2001-11-03 마찌다 가쯔히꼬 하프톤 마스크의 제조공정
JP2001183809A (ja) * 1999-12-24 2001-07-06 Nec Corp フォトマスク及びフォトマスク製造方法
JP2005010814A (ja) * 2004-10-01 2005-01-13 Hoya Corp グレートーンマスク及びその製造方法
KR100802450B1 (ko) * 2006-04-12 2008-02-13 엘지마이크론 주식회사 다중 반투과부를 구비한 하프톤 마스크 및 그 제조방법
KR20090074564A (ko) * 2008-01-02 2009-07-07 주식회사 하이닉스반도체 하프톤 위상반전마스크 제조 방법

Also Published As

Publication number Publication date
CN102262354A (zh) 2011-11-30
TW201227166A (en) 2012-07-01
JP2012008546A (ja) 2012-01-12
CN102262354B (zh) 2014-07-16
KR20110128753A (ko) 2011-11-30
TWI454834B (zh) 2014-10-01

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