KR101294573B1 - 저항 기반 메모리 회로의 제어된 값 기준 신호 - Google Patents
저항 기반 메모리 회로의 제어된 값 기준 신호 Download PDFInfo
- Publication number
- KR101294573B1 KR101294573B1 KR1020117002362A KR20117002362A KR101294573B1 KR 101294573 B1 KR101294573 B1 KR 101294573B1 KR 1020117002362 A KR1020117002362 A KR 1020117002362A KR 20117002362 A KR20117002362 A KR 20117002362A KR 101294573 B1 KR101294573 B1 KR 101294573B1
- Authority
- KR
- South Korea
- Prior art keywords
- cell
- load
- mram
- signal
- value
- Prior art date
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/164,436 US7813166B2 (en) | 2008-06-30 | 2008-06-30 | Controlled value reference signal of resistance based memory circuit |
US12/164,436 | 2008-06-30 | ||
PCT/US2009/048301 WO2010002637A1 (en) | 2008-06-30 | 2009-06-23 | Controlled value reference signal of resistance based memory circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110025700A KR20110025700A (ko) | 2011-03-10 |
KR101294573B1 true KR101294573B1 (ko) | 2013-08-07 |
Family
ID=40936238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020117002362A KR101294573B1 (ko) | 2008-06-30 | 2009-06-23 | 저항 기반 메모리 회로의 제어된 값 기준 신호 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7813166B2 (zh) |
EP (2) | EP2515305B1 (zh) |
JP (2) | JP5579712B2 (zh) |
KR (1) | KR101294573B1 (zh) |
CN (1) | CN102077291B (zh) |
TW (1) | TW201007731A (zh) |
WO (1) | WO2010002637A1 (zh) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100735750B1 (ko) * | 2005-12-15 | 2007-07-06 | 삼성전자주식회사 | 복수개의 균일한 기준 데이터들을 생성하는 기준 셀 블록및 감지증폭 유니트들을 구비하는 반도체 소자들 및 이를채택하는 시스템들 |
US7787282B2 (en) * | 2008-03-21 | 2010-08-31 | Micron Technology, Inc. | Sensing resistance variable memory |
JP2010049751A (ja) * | 2008-08-22 | 2010-03-04 | Toshiba Corp | 抵抗変化型メモリ |
US8154903B2 (en) * | 2009-06-17 | 2012-04-10 | Qualcomm Incorporated | Split path sensing circuit |
US8335101B2 (en) * | 2010-01-21 | 2012-12-18 | Qualcomm Incorporated | Resistance-based memory with reduced voltage input/output device |
US8254195B2 (en) * | 2010-06-01 | 2012-08-28 | Qualcomm Incorporated | High-speed sensing for resistive memories |
US8787070B2 (en) * | 2011-04-13 | 2014-07-22 | Panasonic Corporation | Reference cell circuit and variable resistance nonvolatile memory device including the same |
US8665638B2 (en) * | 2011-07-11 | 2014-03-04 | Qualcomm Incorporated | MRAM sensing with magnetically annealed reference cell |
KR20140047732A (ko) | 2011-08-26 | 2014-04-22 | 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. | 어레이에서의 저항성 스위칭 소자를 판독하기 위한 회로 및 그 방법 |
US8902641B2 (en) * | 2012-04-10 | 2014-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Adjusting reference resistances in determining MRAM resistance states |
US9159381B2 (en) * | 2012-05-04 | 2015-10-13 | Qualcomm Incorporated | Tunable reference circuit |
US9082509B2 (en) * | 2012-12-19 | 2015-07-14 | Intel Corporation | Method and apparatus for reading variable resistance memory elements |
US9070441B2 (en) * | 2012-12-21 | 2015-06-30 | Sony Corporation | Non-volatile memory system with reset verification mechanism and method of operation thereof |
KR102024523B1 (ko) | 2012-12-26 | 2019-09-24 | 삼성전자 주식회사 | 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법 |
KR101470520B1 (ko) * | 2013-02-12 | 2014-12-08 | 성균관대학교산학협력단 | 반도체 메모리 장치, 독출 방법 및 시스템 |
US9165629B2 (en) * | 2013-03-12 | 2015-10-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for MRAM sense reference trimming |
US9153307B2 (en) * | 2013-09-09 | 2015-10-06 | Qualcomm Incorporated | System and method to provide a reference cell |
KR102111510B1 (ko) * | 2014-04-10 | 2020-05-19 | 에스케이하이닉스 주식회사 | 전자 장치 |
KR102354350B1 (ko) | 2015-05-18 | 2022-01-21 | 삼성전자주식회사 | 메모리 장치 및 이를 포함하는 메모리 시스템 |
WO2017176217A1 (en) * | 2016-04-07 | 2017-10-12 | Agency For Science, Technology And Research | Circuit arrangement, memory column, memory array, and method of forming the same |
US10319423B2 (en) * | 2016-11-28 | 2019-06-11 | Taiwan Semiconductor Manufacturing Company Limited | Memory device with a low-current reference circuit |
JP2018147533A (ja) * | 2017-03-03 | 2018-09-20 | ソニーセミコンダクタソリューションズ株式会社 | 半導体記憶装置、情報処理装置及びリファレンス電位設定方法 |
US10431278B2 (en) * | 2017-08-14 | 2019-10-01 | Qualcomm Incorporated | Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperature |
KR102384161B1 (ko) | 2017-08-24 | 2022-04-08 | 삼성전자주식회사 | 비트 라인 누설 전류에 의한 읽기 페일을 방지하도록 구성되는 메모리 장치 및 그 동작 방법 |
US10854289B2 (en) | 2018-05-14 | 2020-12-01 | Samsung Electronics Co., Ltd. | Resistive memory device providing reference calibration, and operating method thereof |
TWI676933B (zh) * | 2018-07-05 | 2019-11-11 | 慧榮科技股份有限公司 | 韌體更新方法 |
US11211107B1 (en) * | 2020-09-01 | 2021-12-28 | Avalanche Technology, Inc. | Magnetic memory read circuit and calibration method therefor |
EP4231299A4 (en) * | 2020-11-20 | 2023-12-06 | Huawei Technologies Co., Ltd. | MEMORY DATA READING CIRCUIT AND MEMORY |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004005797A (ja) | 2002-05-30 | 2004-01-08 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
US20040174750A1 (en) | 2003-03-07 | 2004-09-09 | Jarrod Eliason | Programmable reference for 1T/1C ferroelectric memories |
US20040208052A1 (en) | 2001-04-26 | 2004-10-21 | Mitsubishi Denki Kabushiki Kaisha | Thin film magnetic memory device capable of conducting stable data read and write operations |
US20050219905A1 (en) | 2004-03-31 | 2005-10-06 | Nec Electronics Corporation | Memory device for improved reference current configuration |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3404712B2 (ja) * | 1996-05-15 | 2003-05-12 | 株式会社東芝 | 不揮発性半導体記憶装置及びその書き込み方法 |
US6185143B1 (en) * | 2000-02-04 | 2001-02-06 | Hewlett-Packard Company | Magnetic random access memory (MRAM) device including differential sense amplifiers |
US6501697B1 (en) * | 2001-10-11 | 2002-12-31 | Hewlett-Packard Company | High density memory sense amplifier |
JP2004062922A (ja) * | 2002-07-25 | 2004-02-26 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
JP5676842B2 (ja) * | 2008-05-30 | 2015-02-25 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置 |
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2008
- 2008-06-30 US US12/164,436 patent/US7813166B2/en active Active
-
2009
- 2009-06-23 WO PCT/US2009/048301 patent/WO2010002637A1/en active Application Filing
- 2009-06-23 JP JP2011516534A patent/JP5579712B2/ja active Active
- 2009-06-23 CN CN200980124863.7A patent/CN102077291B/zh active Active
- 2009-06-23 EP EP12176957.4A patent/EP2515305B1/en active Active
- 2009-06-23 EP EP09774089A patent/EP2311038B1/en active Active
- 2009-06-23 KR KR1020117002362A patent/KR101294573B1/ko active IP Right Grant
- 2009-06-30 TW TW098122134A patent/TW201007731A/zh unknown
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2013
- 2013-06-25 JP JP2013132479A patent/JP5619963B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040208052A1 (en) | 2001-04-26 | 2004-10-21 | Mitsubishi Denki Kabushiki Kaisha | Thin film magnetic memory device capable of conducting stable data read and write operations |
JP2004005797A (ja) | 2002-05-30 | 2004-01-08 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
US20040174750A1 (en) | 2003-03-07 | 2004-09-09 | Jarrod Eliason | Programmable reference for 1T/1C ferroelectric memories |
US20050219905A1 (en) | 2004-03-31 | 2005-10-06 | Nec Electronics Corporation | Memory device for improved reference current configuration |
Also Published As
Publication number | Publication date |
---|---|
JP2011527066A (ja) | 2011-10-20 |
EP2515305A1 (en) | 2012-10-24 |
CN102077291A (zh) | 2011-05-25 |
TW201007731A (en) | 2010-02-16 |
US7813166B2 (en) | 2010-10-12 |
EP2311038A1 (en) | 2011-04-20 |
EP2311038B1 (en) | 2012-10-03 |
WO2010002637A1 (en) | 2010-01-07 |
EP2515305B1 (en) | 2016-01-06 |
CN102077291B (zh) | 2014-08-06 |
US20090323405A1 (en) | 2009-12-31 |
JP5579712B2 (ja) | 2014-08-27 |
JP5619963B2 (ja) | 2014-11-05 |
JP2013239229A (ja) | 2013-11-28 |
KR20110025700A (ko) | 2011-03-10 |
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