KR101283334B1 - 비수성 용액으로부터의 무전해 석출 - Google Patents

비수성 용액으로부터의 무전해 석출 Download PDF

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Publication number
KR101283334B1
KR101283334B1 KR1020117014064A KR20117014064A KR101283334B1 KR 101283334 B1 KR101283334 B1 KR 101283334B1 KR 1020117014064 A KR1020117014064 A KR 1020117014064A KR 20117014064 A KR20117014064 A KR 20117014064A KR 101283334 B1 KR101283334 B1 KR 101283334B1
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South Korea
Prior art keywords
copper
aqueous
solution
plating solution
copper plating
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Korean (ko)
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KR20110112300A (ko
Inventor
유지니우스 노르쿠스
야네 야시아우스키에네
예즈디 도르디
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램 리써치 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemically Coating (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
KR1020117014064A 2008-12-18 2009-12-10 비수성 용액으로부터의 무전해 석출 Active KR101283334B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/338,998 2008-12-18
US12/338,998 US7686875B2 (en) 2006-05-11 2008-12-18 Electroless deposition from non-aqueous solutions
PCT/US2009/067594 WO2010080331A2 (en) 2008-12-18 2009-12-10 Electroless depositions from non-aqueous solutions

Publications (2)

Publication Number Publication Date
KR20110112300A KR20110112300A (ko) 2011-10-12
KR101283334B1 true KR101283334B1 (ko) 2013-07-09

Family

ID=42317054

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117014064A Active KR101283334B1 (ko) 2008-12-18 2009-12-10 비수성 용액으로부터의 무전해 석출

Country Status (7)

Country Link
US (1) US7686875B2 (enExample)
JP (1) JP5628199B2 (enExample)
KR (1) KR101283334B1 (enExample)
CN (1) CN102265384B (enExample)
SG (1) SG171838A1 (enExample)
TW (1) TWI443223B (enExample)
WO (1) WO2010080331A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8298325B2 (en) * 2006-05-11 2012-10-30 Lam Research Corporation Electroless deposition from non-aqueous solutions
JP4755573B2 (ja) * 2006-11-30 2011-08-24 東京応化工業株式会社 処理装置および処理方法、ならびに表面処理治具
US7794530B2 (en) * 2006-12-22 2010-09-14 Lam Research Corporation Electroless deposition of cobalt alloys
JP4971078B2 (ja) * 2007-08-30 2012-07-11 東京応化工業株式会社 表面処理装置
JP5571435B2 (ja) * 2010-03-31 2014-08-13 Ｊｘ日鉱日石金属株式会社 銀メッキ銅微粉の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100475403B1 (ko) * 2002-05-28 2005-03-15 재단법인서울대학교산학협력재단 반도체 배선용 구리 박막 형성방법
US7297190B1 (en) * 2006-06-28 2007-11-20 Lam Research Corporation Plating solutions for electroless deposition of copper
KR20080083790A (ko) * 2007-03-13 2008-09-19 삼성전자주식회사 무전해 구리 도금액, 그의 제조방법 및 무전해 구리도금방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3653953A (en) * 1970-01-26 1972-04-04 North American Rockwell Nonaqueous electroless plating
US3635761A (en) * 1970-05-05 1972-01-18 Mobil Oil Corp Electroless deposition of metals
US3962494A (en) * 1971-07-29 1976-06-08 Photocircuits Division Of Kollmorgan Corporation Sensitized substrates for chemical metallization
US4301196A (en) * 1978-09-13 1981-11-17 Kollmorgen Technologies Corp. Electroless copper deposition process having faster plating rates
DE3148330A1 (de) * 1981-12-07 1983-06-09 Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Verfahren zur stromlosen abscheidung von edelmetallschichten auf oberflaechen von unedlen metallen
JPH03215676A (ja) * 1990-01-20 1991-09-20 Tokin Corp 無電解めっき剤，及びそれを用いた無電解めっき方法
DE4440299A1 (de) * 1994-11-11 1996-05-15 Metallgesellschaft Ag Verfahren zur stromlosen Abscheidung von Kupferüberzügen auf Eisen- und Eisenlegierungsoberflächen
US6291025B1 (en) * 1999-06-04 2001-09-18 Argonide Corporation Electroless coatings formed from organic liquids
JP2001020077A (ja) * 1999-07-07 2001-01-23 Sony Corp 無電解めっき方法及び無電解めっき液
EP1158073A1 (en) * 1999-10-19 2001-11-28 Ebara Corporation Plating method, wiring forming method and devices therefor
US7147767B2 (en) * 2002-12-16 2006-12-12 3M Innovative Properties Company Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor
US7306662B2 (en) * 2006-05-11 2007-12-11 Lam Research Corporation Plating solution for electroless deposition of copper
US7752996B2 (en) * 2006-05-11 2010-07-13 Lam Research Corporation Apparatus for applying a plating solution for electroless deposition

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100475403B1 (ko) * 2002-05-28 2005-03-15 재단법인서울대학교산학협력재단 반도체 배선용 구리 박막 형성방법
US7297190B1 (en) * 2006-06-28 2007-11-20 Lam Research Corporation Plating solutions for electroless deposition of copper
KR20080083790A (ko) * 2007-03-13 2008-09-19 삼성전자주식회사 무전해 구리 도금액, 그의 제조방법 및 무전해 구리도금방법

Also Published As

Publication number Publication date
WO2010080331A3 (en) 2010-09-10
US7686875B2 (en) 2010-03-30
US20090095198A1 (en) 2009-04-16
TW201033403A (en) 2010-09-16
KR20110112300A (ko) 2011-10-12
WO2010080331A2 (en) 2010-07-15
JP2012512967A (ja) 2012-06-07
CN102265384B (zh) 2015-07-08
TWI443223B (zh) 2014-07-01
CN102265384A (zh) 2011-11-30
SG171838A1 (en) 2011-07-28
JP5628199B2 (ja) 2014-11-19

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