JP5628199B2 - 非水溶液からの無電解析出 - Google Patents

非水溶液からの無電解析出 Download PDF

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Publication number
JP5628199B2
JP5628199B2 JP2011542275A JP2011542275A JP5628199B2 JP 5628199 B2 JP5628199 B2 JP 5628199B2 JP 2011542275 A JP2011542275 A JP 2011542275A JP 2011542275 A JP2011542275 A JP 2011542275A JP 5628199 B2 JP5628199 B2 JP 5628199B2
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Japan
Prior art keywords
solution
copper
cobalt
salt component
anhydrous
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JP2011542275A
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English (en)
Japanese (ja)
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JP2012512967A5 (enExample
JP2012512967A (ja
Inventor
ノークス・ユージニユス
ジェーシオースキーヌ・ジェーン
ドルディ・イエッディ
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Lam Research Corp
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Lam Research Corp
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Publication of JP2012512967A5 publication Critical patent/JP2012512967A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
JP2011542275A 2008-12-18 2009-12-10 非水溶液からの無電解析出 Active JP5628199B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/338,998 2008-12-18
US12/338,998 US7686875B2 (en) 2006-05-11 2008-12-18 Electroless deposition from non-aqueous solutions
PCT/US2009/067594 WO2010080331A2 (en) 2008-12-18 2009-12-10 Electroless depositions from non-aqueous solutions

Publications (3)

Publication Number Publication Date
JP2012512967A JP2012512967A (ja) 2012-06-07
JP2012512967A5 JP2012512967A5 (enExample) 2014-07-31
JP5628199B2 true JP5628199B2 (ja) 2014-11-19

Family

ID=42317054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011542275A Active JP5628199B2 (ja) 2008-12-18 2009-12-10 非水溶液からの無電解析出

Country Status (7)

Country Link
US (1) US7686875B2 (enExample)
JP (1) JP5628199B2 (enExample)
KR (1) KR101283334B1 (enExample)
CN (1) CN102265384B (enExample)
SG (1) SG171838A1 (enExample)
TW (1) TWI443223B (enExample)
WO (1) WO2010080331A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8298325B2 (en) * 2006-05-11 2012-10-30 Lam Research Corporation Electroless deposition from non-aqueous solutions
JP4755573B2 (ja) * 2006-11-30 2011-08-24 東京応化工業株式会社 処理装置および処理方法、ならびに表面処理治具
US7794530B2 (en) * 2006-12-22 2010-09-14 Lam Research Corporation Electroless deposition of cobalt alloys
JP4971078B2 (ja) * 2007-08-30 2012-07-11 東京応化工業株式会社 表面処理装置
JP5571435B2 (ja) * 2010-03-31 2014-08-13 Ｊｘ日鉱日石金属株式会社 銀メッキ銅微粉の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3653953A (en) * 1970-01-26 1972-04-04 North American Rockwell Nonaqueous electroless plating
US3635761A (en) * 1970-05-05 1972-01-18 Mobil Oil Corp Electroless deposition of metals
US3962494A (en) * 1971-07-29 1976-06-08 Photocircuits Division Of Kollmorgan Corporation Sensitized substrates for chemical metallization
US4301196A (en) * 1978-09-13 1981-11-17 Kollmorgen Technologies Corp. Electroless copper deposition process having faster plating rates
DE3148330A1 (de) * 1981-12-07 1983-06-09 Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Verfahren zur stromlosen abscheidung von edelmetallschichten auf oberflaechen von unedlen metallen
JPH03215676A (ja) * 1990-01-20 1991-09-20 Tokin Corp 無電解めっき剤，及びそれを用いた無電解めっき方法
DE4440299A1 (de) * 1994-11-11 1996-05-15 Metallgesellschaft Ag Verfahren zur stromlosen Abscheidung von Kupferüberzügen auf Eisen- und Eisenlegierungsoberflächen
US6291025B1 (en) * 1999-06-04 2001-09-18 Argonide Corporation Electroless coatings formed from organic liquids
JP2001020077A (ja) * 1999-07-07 2001-01-23 Sony Corp 無電解めっき方法及び無電解めっき液
EP1158073A1 (en) * 1999-10-19 2001-11-28 Ebara Corporation Plating method, wiring forming method and devices therefor
KR100475403B1 (ko) * 2002-05-28 2005-03-15 재단법인서울대학교산학협력재단 반도체 배선용 구리 박막 형성방법
US7147767B2 (en) * 2002-12-16 2006-12-12 3M Innovative Properties Company Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor
US7306662B2 (en) * 2006-05-11 2007-12-11 Lam Research Corporation Plating solution for electroless deposition of copper
US7297190B1 (en) * 2006-06-28 2007-11-20 Lam Research Corporation Plating solutions for electroless deposition of copper
US7752996B2 (en) * 2006-05-11 2010-07-13 Lam Research Corporation Apparatus for applying a plating solution for electroless deposition
KR20080083790A (ko) * 2007-03-13 2008-09-19 삼성전자주식회사 무전해 구리 도금액, 그의 제조방법 및 무전해 구리도금방법

Also Published As

Publication number Publication date
WO2010080331A3 (en) 2010-09-10
KR101283334B1 (ko) 2013-07-09
US7686875B2 (en) 2010-03-30
US20090095198A1 (en) 2009-04-16
TW201033403A (en) 2010-09-16
KR20110112300A (ko) 2011-10-12
WO2010080331A2 (en) 2010-07-15
JP2012512967A (ja) 2012-06-07
CN102265384B (zh) 2015-07-08
TWI443223B (zh) 2014-07-01
CN102265384A (zh) 2011-11-30
SG171838A1 (en) 2011-07-28

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