CN102265384B - 非水溶液无电沉积 - Google Patents
非水溶液无电沉积 Download PDFInfo
- Publication number
- CN102265384B CN102265384B CN200980150019.1A CN200980150019A CN102265384B CN 102265384 B CN102265384 B CN 102265384B CN 200980150019 A CN200980150019 A CN 200980150019A CN 102265384 B CN102265384 B CN 102265384B
- Authority
- CN
- China
- Prior art keywords
- solution
- copper
- aqueous
- cobalt
- anhydrous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemically Coating (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/338,998 | 2008-12-18 | ||
| US12/338,998 US7686875B2 (en) | 2006-05-11 | 2008-12-18 | Electroless deposition from non-aqueous solutions |
| PCT/US2009/067594 WO2010080331A2 (en) | 2008-12-18 | 2009-12-10 | Electroless depositions from non-aqueous solutions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102265384A CN102265384A (zh) | 2011-11-30 |
| CN102265384B true CN102265384B (zh) | 2015-07-08 |
Family
ID=42317054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980150019.1A Active CN102265384B (zh) | 2008-12-18 | 2009-12-10 | 非水溶液无电沉积 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7686875B2 (enExample) |
| JP (1) | JP5628199B2 (enExample) |
| KR (1) | KR101283334B1 (enExample) |
| CN (1) | CN102265384B (enExample) |
| SG (1) | SG171838A1 (enExample) |
| TW (1) | TWI443223B (enExample) |
| WO (1) | WO2010080331A2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8298325B2 (en) * | 2006-05-11 | 2012-10-30 | Lam Research Corporation | Electroless deposition from non-aqueous solutions |
| JP4755573B2 (ja) * | 2006-11-30 | 2011-08-24 | 東京応化工業株式会社 | 処理装置および処理方法、ならびに表面処理治具 |
| US7794530B2 (en) * | 2006-12-22 | 2010-09-14 | Lam Research Corporation | Electroless deposition of cobalt alloys |
| JP4971078B2 (ja) * | 2007-08-30 | 2012-07-11 | 東京応化工業株式会社 | 表面処理装置 |
| JP5571435B2 (ja) * | 2010-03-31 | 2014-08-13 | Jx日鉱日石金属株式会社 | 銀メッキ銅微粉の製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4301196A (en) * | 1978-09-13 | 1981-11-17 | Kollmorgen Technologies Corp. | Electroless copper deposition process having faster plating rates |
| JP2001020077A (ja) * | 1999-07-07 | 2001-01-23 | Sony Corp | 無電解めっき方法及び無電解めっき液 |
| US6261644B1 (en) * | 1994-11-11 | 2001-07-17 | Metallgesellschaft Aktiengesellschaft | Process for the electroless deposition of copper coatings on iron and iron alloy surfaces |
| US6709555B1 (en) * | 1999-10-19 | 2004-03-23 | Ebara Corporation | Plating method, interconnection forming method, and apparatus for carrying out those methods |
| WO2008002977A3 (en) * | 2006-06-28 | 2008-03-06 | Lam Res Corp | Apparatus for applying a plating solution for electroless deposition |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3653953A (en) * | 1970-01-26 | 1972-04-04 | North American Rockwell | Nonaqueous electroless plating |
| US3635761A (en) * | 1970-05-05 | 1972-01-18 | Mobil Oil Corp | Electroless deposition of metals |
| US3962494A (en) * | 1971-07-29 | 1976-06-08 | Photocircuits Division Of Kollmorgan Corporation | Sensitized substrates for chemical metallization |
| DE3148330A1 (de) * | 1981-12-07 | 1983-06-09 | Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Verfahren zur stromlosen abscheidung von edelmetallschichten auf oberflaechen von unedlen metallen |
| JPH03215676A (ja) * | 1990-01-20 | 1991-09-20 | Tokin Corp | 無電解めっき剤,及びそれを用いた無電解めっき方法 |
| US6291025B1 (en) * | 1999-06-04 | 2001-09-18 | Argonide Corporation | Electroless coatings formed from organic liquids |
| KR100475403B1 (ko) * | 2002-05-28 | 2005-03-15 | 재단법인서울대학교산학협력재단 | 반도체 배선용 구리 박막 형성방법 |
| US7147767B2 (en) * | 2002-12-16 | 2006-12-12 | 3M Innovative Properties Company | Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor |
| US7306662B2 (en) * | 2006-05-11 | 2007-12-11 | Lam Research Corporation | Plating solution for electroless deposition of copper |
| US7297190B1 (en) * | 2006-06-28 | 2007-11-20 | Lam Research Corporation | Plating solutions for electroless deposition of copper |
| KR20080083790A (ko) * | 2007-03-13 | 2008-09-19 | 삼성전자주식회사 | 무전해 구리 도금액, 그의 제조방법 및 무전해 구리도금방법 |
-
2008
- 2008-12-18 US US12/338,998 patent/US7686875B2/en active Active
-
2009
- 2009-12-10 KR KR1020117014064A patent/KR101283334B1/ko active Active
- 2009-12-10 CN CN200980150019.1A patent/CN102265384B/zh active Active
- 2009-12-10 WO PCT/US2009/067594 patent/WO2010080331A2/en not_active Ceased
- 2009-12-10 SG SG2011038544A patent/SG171838A1/en unknown
- 2009-12-10 JP JP2011542275A patent/JP5628199B2/ja active Active
- 2009-12-18 TW TW098143687A patent/TWI443223B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4301196A (en) * | 1978-09-13 | 1981-11-17 | Kollmorgen Technologies Corp. | Electroless copper deposition process having faster plating rates |
| US6261644B1 (en) * | 1994-11-11 | 2001-07-17 | Metallgesellschaft Aktiengesellschaft | Process for the electroless deposition of copper coatings on iron and iron alloy surfaces |
| JP2001020077A (ja) * | 1999-07-07 | 2001-01-23 | Sony Corp | 無電解めっき方法及び無電解めっき液 |
| US6709555B1 (en) * | 1999-10-19 | 2004-03-23 | Ebara Corporation | Plating method, interconnection forming method, and apparatus for carrying out those methods |
| WO2008002977A3 (en) * | 2006-06-28 | 2008-03-06 | Lam Res Corp | Apparatus for applying a plating solution for electroless deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010080331A3 (en) | 2010-09-10 |
| KR101283334B1 (ko) | 2013-07-09 |
| US7686875B2 (en) | 2010-03-30 |
| US20090095198A1 (en) | 2009-04-16 |
| TW201033403A (en) | 2010-09-16 |
| KR20110112300A (ko) | 2011-10-12 |
| WO2010080331A2 (en) | 2010-07-15 |
| JP2012512967A (ja) | 2012-06-07 |
| TWI443223B (zh) | 2014-07-01 |
| CN102265384A (zh) | 2011-11-30 |
| SG171838A1 (en) | 2011-07-28 |
| JP5628199B2 (ja) | 2014-11-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |