KR101283162B1 - 레이저 가공 방법 - Google Patents

레이저 가공 방법 Download PDF

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Publication number
KR101283162B1
KR101283162B1 KR1020077010657A KR20077010657A KR101283162B1 KR 101283162 B1 KR101283162 B1 KR 101283162B1 KR 1020077010657 A KR1020077010657 A KR 1020077010657A KR 20077010657 A KR20077010657 A KR 20077010657A KR 101283162 B1 KR101283162 B1 KR 101283162B1
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KR
South Korea
Prior art keywords
laser beam
processing
region
along
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020077010657A
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English (en)
Korean (ko)
Other versions
KR20070084162A (ko
Inventor
코지 쿠노
다츠야 스즈키
Original Assignee
하마마츠 포토닉스 가부시키가이샤
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Publication of KR20070084162A publication Critical patent/KR20070084162A/ko
Application granted granted Critical
Publication of KR101283162B1 publication Critical patent/KR101283162B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0665—Shaping the laser beam, e.g. by masks or multi-focusing by beam condensation on the workpiece, e.g. for focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Drying Of Semiconductors (AREA)
KR1020077010657A 2004-10-13 2005-10-05 레이저 가공 방법 Expired - Lifetime KR101283162B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00299193 2004-10-13
JP2004299193A JP4754801B2 (ja) 2004-10-13 2004-10-13 レーザ加工方法
PCT/JP2005/018464 WO2006040984A1 (ja) 2004-10-13 2005-10-05 レーザ加工方法

Publications (2)

Publication Number Publication Date
KR20070084162A KR20070084162A (ko) 2007-08-24
KR101283162B1 true KR101283162B1 (ko) 2013-07-05

Family

ID=36148279

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077010657A Expired - Lifetime KR101283162B1 (ko) 2004-10-13 2005-10-05 레이저 가공 방법

Country Status (8)

Country Link
US (1) US7608214B2 (https=)
EP (1) EP1804280B1 (https=)
JP (1) JP4754801B2 (https=)
KR (1) KR101283162B1 (https=)
CN (1) CN100472726C (https=)
MY (1) MY141077A (https=)
TW (1) TWI366493B (https=)
WO (1) WO2006040984A1 (https=)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
ATE493226T1 (de) 2002-03-12 2011-01-15 Hamamatsu Photonics Kk Verfahren zum schneiden eines bearbeiteten objekts
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
ES2639733T3 (es) 2002-03-12 2017-10-30 Hamamatsu Photonics K.K. Método de división de sustrato
TWI520269B (zh) 2002-12-03 2016-02-01 濱松赫德尼古斯股份有限公司 Cutting method of semiconductor substrate
FR2852250B1 (fr) 2003-03-11 2009-07-24 Jean Luc Jouvin Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau
CN1758985A (zh) 2003-03-12 2006-04-12 浜松光子学株式会社 激光加工方法
CN1826207B (zh) * 2003-07-18 2010-06-16 浜松光子学株式会社 激光加工方法、激光加工装置以及加工产品
JP4563097B2 (ja) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 半導体基板の切断方法
JP4601965B2 (ja) * 2004-01-09 2010-12-22 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4598407B2 (ja) * 2004-01-09 2010-12-15 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4509578B2 (ja) 2004-01-09 2010-07-21 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
EP1742253B1 (en) 2004-03-30 2012-05-09 Hamamatsu Photonics K.K. Laser processing method
US8604383B2 (en) * 2004-08-06 2013-12-10 Hamamatsu Photonics K.K. Laser processing method
JP4762653B2 (ja) * 2005-09-16 2011-08-31 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4923874B2 (ja) * 2005-11-16 2012-04-25 株式会社デンソー 半導体ウェハ
JP4907965B2 (ja) * 2005-11-25 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法
JP4804911B2 (ja) * 2005-12-22 2011-11-02 浜松ホトニクス株式会社 レーザ加工装置
JP4907984B2 (ja) 2005-12-27 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップ
JP5183892B2 (ja) 2006-07-03 2013-04-17 浜松ホトニクス株式会社 レーザ加工方法
ES2428826T3 (es) 2006-07-03 2013-11-11 Hamamatsu Photonics K.K. Procedimiento de procesamiento por láser y chip
JP4954653B2 (ja) 2006-09-19 2012-06-20 浜松ホトニクス株式会社 レーザ加工方法
CN102489883B (zh) * 2006-09-19 2015-12-02 浜松光子学株式会社 激光加工方法和激光加工装置
JP5101073B2 (ja) * 2006-10-02 2012-12-19 浜松ホトニクス株式会社 レーザ加工装置
JP5132911B2 (ja) * 2006-10-03 2013-01-30 浜松ホトニクス株式会社 レーザ加工方法
JP4964554B2 (ja) * 2006-10-03 2012-07-04 浜松ホトニクス株式会社 レーザ加工方法
CN102357739B (zh) * 2006-10-04 2014-09-10 浜松光子学株式会社 激光加工方法
JP5336054B2 (ja) * 2007-07-18 2013-11-06 浜松ホトニクス株式会社 加工情報供給装置を備える加工情報供給システム
JP4558775B2 (ja) 2007-10-23 2010-10-06 富士通株式会社 加工装置および加工方法並びに板ばねの製造方法
JP5449665B2 (ja) * 2007-10-30 2014-03-19 浜松ホトニクス株式会社 レーザ加工方法
JP5134928B2 (ja) * 2007-11-30 2013-01-30 浜松ホトニクス株式会社 加工対象物研削方法
JP5054496B2 (ja) * 2007-11-30 2012-10-24 浜松ホトニクス株式会社 加工対象物切断方法
US7931849B2 (en) * 2008-06-25 2011-04-26 Applied Micro Circuits Corporation Non-destructive laser optical integrated circuit package marking
JP5692969B2 (ja) 2008-09-01 2015-04-01 浜松ホトニクス株式会社 収差補正方法、この収差補正方法を用いたレーザ加工方法、この収差補正方法を用いたレーザ照射方法、収差補正装置、及び、収差補正プログラム
JP5254761B2 (ja) 2008-11-28 2013-08-07 浜松ホトニクス株式会社 レーザ加工装置
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EP2394775B1 (en) 2009-02-09 2019-04-03 Hamamatsu Photonics K.K. Workpiece cutting method
US8347651B2 (en) * 2009-02-19 2013-01-08 Corning Incorporated Method of separating strengthened glass
KR20170082649A (ko) * 2009-03-20 2017-07-14 코닝 인코포레이티드 정밀 레이저 스코어링
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JP2011189477A (ja) * 2010-03-16 2011-09-29 Disco Corp マイクロマシンデバイスの製造方法
US8828873B2 (en) * 2010-07-26 2014-09-09 Hamamatsu Photonics K.K. Method for manufacturing semiconductor device
JP2012054273A (ja) * 2010-08-31 2012-03-15 Disco Abrasive Syst Ltd ウエーハの加工方法
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KR101511670B1 (ko) * 2013-01-25 2015-04-13 에이엠테크놀로지 주식회사 유리 절단 장치
JP6366914B2 (ja) 2013-09-24 2018-08-01 株式会社東芝 多接合型太陽電池
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US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
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JP7233225B2 (ja) * 2019-01-10 2023-03-06 株式会社ディスコ ウェーハの割段方法
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
FR3099636B1 (fr) * 2019-07-31 2021-08-06 Aledia Système et procédé de traitement par laser
JP7475214B2 (ja) * 2020-06-26 2024-04-26 株式会社ディスコ 被加工物の加工方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002192371A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP2002219591A (ja) 2001-01-22 2002-08-06 Toshiba Corp レーザ光照射装置
JP2003266185A (ja) 2002-03-12 2003-09-24 Hamamatsu Photonics Kk レーザ加工方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
JP2004188422A (ja) 2002-12-06 2004-07-08 Hamamatsu Photonics Kk レーザ加工装置及びレーザ加工方法
CN1529347A (zh) * 2003-10-21 2004-09-15 中国科学院上海光学精密机械研究所 蓝宝石基氮化物芯片的划片方法
JP4509578B2 (ja) 2004-01-09 2010-07-21 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4601965B2 (ja) 2004-01-09 2010-12-22 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4598407B2 (ja) 2004-01-09 2010-12-15 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4732063B2 (ja) * 2004-08-06 2011-07-27 浜松ホトニクス株式会社 レーザ加工方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002192371A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP2002219591A (ja) 2001-01-22 2002-08-06 Toshiba Corp レーザ光照射装置
JP2003266185A (ja) 2002-03-12 2003-09-24 Hamamatsu Photonics Kk レーザ加工方法

Also Published As

Publication number Publication date
WO2006040984A1 (ja) 2006-04-20
TWI366493B (en) 2012-06-21
JP2006114627A (ja) 2006-04-27
JP4754801B2 (ja) 2011-08-24
US7608214B2 (en) 2009-10-27
CN100472726C (zh) 2009-03-25
KR20070084162A (ko) 2007-08-24
TW200626274A (en) 2006-08-01
EP1804280B1 (en) 2015-09-30
MY141077A (en) 2010-03-15
US20090039559A1 (en) 2009-02-12
EP1804280A4 (en) 2009-09-23
CN101040369A (zh) 2007-09-19
EP1804280A1 (en) 2007-07-04

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