KR101264991B1 - 마그네트론 스퍼터링 장치 및 스퍼터링 방법 - Google Patents
마그네트론 스퍼터링 장치 및 스퍼터링 방법 Download PDFInfo
- Publication number
- KR101264991B1 KR101264991B1 KR1020110026222A KR20110026222A KR101264991B1 KR 101264991 B1 KR101264991 B1 KR 101264991B1 KR 1020110026222 A KR1020110026222 A KR 1020110026222A KR 20110026222 A KR20110026222 A KR 20110026222A KR 101264991 B1 KR101264991 B1 KR 101264991B1
- Authority
- KR
- South Korea
- Prior art keywords
- magnet
- yoke
- cathode
- magnetron sputtering
- magnet unit
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010069394A JP5461264B2 (ja) | 2010-03-25 | 2010-03-25 | マグネトロンスパッタリング装置、及び、スパッタリング方法 |
JPJP-P-2010-069394 | 2010-03-25 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020130000245A Division KR101290915B1 (ko) | 2010-03-25 | 2013-01-02 | 마그네트론 스퍼터링 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110107757A KR20110107757A (ko) | 2011-10-04 |
KR101264991B1 true KR101264991B1 (ko) | 2013-05-15 |
Family
ID=44660733
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110026222A KR101264991B1 (ko) | 2010-03-25 | 2011-03-24 | 마그네트론 스퍼터링 장치 및 스퍼터링 방법 |
KR1020130000245A KR101290915B1 (ko) | 2010-03-25 | 2013-01-02 | 마그네트론 스퍼터링 장치 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020130000245A KR101290915B1 (ko) | 2010-03-25 | 2013-01-02 | 마그네트론 스퍼터링 장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5461264B2 (ja) |
KR (2) | KR101264991B1 (ja) |
CN (2) | CN103103489B (ja) |
TW (1) | TWI425108B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104487607B (zh) * | 2012-07-11 | 2017-02-22 | 佳能安内华股份有限公司 | 溅射设备和磁体单元 |
CN109881166B (zh) * | 2016-03-30 | 2021-04-20 | 京浜乐梦金属科技株式会社 | 溅射阴极、溅射装置和成膜体的制造方法 |
CN108172396B (zh) * | 2016-12-07 | 2021-11-16 | 北京北方华创微电子装备有限公司 | 磁性薄膜沉积腔室及薄膜沉积设备 |
JP6580113B2 (ja) * | 2017-12-05 | 2019-09-25 | キヤノントッキ株式会社 | スパッタ装置及びその制御方法 |
KR102420329B1 (ko) * | 2018-02-13 | 2022-07-14 | 한국알박(주) | 마그네트론 스퍼터링 장치의 자석 집합체 |
CN108559964A (zh) * | 2018-07-25 | 2018-09-21 | 衡阳舜达精工科技有限公司 | 一种磁控溅射阴极磁场布置结构及用于制备纳米碳薄膜的方法 |
KR102672094B1 (ko) * | 2018-09-27 | 2024-06-05 | 가부시키가이샤 알박 | 마그네트론 스퍼터링 장치용 자석 유닛 |
KR20220108049A (ko) * | 2019-12-03 | 2022-08-02 | 닛토덴코 가부시키가이샤 | 마그네트론 스퍼터링 성막 장치 |
CN113667951B (zh) * | 2021-08-23 | 2023-03-21 | 杭州朗为科技有限公司 | 一种端头绝缘磁场可调的旋转阴极 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100337065B1 (ko) | 1999-11-12 | 2002-05-16 | 니시히라 순지 | 스퍼터링 장치의 마그네트론 캐소드 |
JP2004124171A (ja) | 2002-10-02 | 2004-04-22 | Matsushita Electric Ind Co Ltd | プラズマ処理装置及び方法 |
KR100585578B1 (ko) | 2003-09-30 | 2006-06-07 | 닛뽕빅터 가부시키가이샤 | 마그네트론 스퍼터링 장치 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0462909A (ja) * | 1990-06-30 | 1992-02-27 | Mitsubishi Kasei Corp | 磁場発生用構造体における磁石の固定方法 |
JPH0525625A (ja) * | 1991-02-17 | 1993-02-02 | Ulvac Japan Ltd | マグネトロンスパツタカソード |
JPH06136528A (ja) * | 1992-10-23 | 1994-05-17 | Sumitomo Metal Mining Co Ltd | マグネトロンスパッタ装置 |
DE19836125C2 (de) * | 1998-08-10 | 2001-12-06 | Leybold Systems Gmbh | Zerstäubungsvorrichtung mit einer Kathode mit Permanentmagnetanordnung |
JP3649933B2 (ja) * | 1999-03-01 | 2005-05-18 | シャープ株式会社 | マグネトロンスパッタ装置 |
KR100345924B1 (ko) * | 2000-01-24 | 2002-07-27 | 한전건 | 평판 마그네트론 스퍼터링 장치 |
CN101107381A (zh) * | 2005-02-02 | 2008-01-16 | 日立金属株式会社 | 磁控管溅射用磁电路装置及其制造方法 |
CN101126152B (zh) * | 2006-08-18 | 2010-04-21 | 深圳豪威真空光电子股份有限公司 | 柱状磁控溅射器 |
JP2008121077A (ja) * | 2006-11-14 | 2008-05-29 | Hitachi Metals Ltd | マグネトロンスパッタリング用磁気回路 |
CN101280420B (zh) * | 2008-05-28 | 2010-09-29 | 东北大学 | 一种具有磁场增强和调节功能的磁控溅射靶 |
-
2010
- 2010-03-25 JP JP2010069394A patent/JP5461264B2/ja active Active
-
2011
- 2011-03-16 TW TW100108997A patent/TWI425108B/zh active
- 2011-03-24 KR KR1020110026222A patent/KR101264991B1/ko active IP Right Grant
- 2011-03-25 CN CN201310024399.2A patent/CN103103489B/zh active Active
- 2011-03-25 CN CN2011100727525A patent/CN102199754A/zh active Pending
-
2013
- 2013-01-02 KR KR1020130000245A patent/KR101290915B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100337065B1 (ko) | 1999-11-12 | 2002-05-16 | 니시히라 순지 | 스퍼터링 장치의 마그네트론 캐소드 |
JP2004124171A (ja) | 2002-10-02 | 2004-04-22 | Matsushita Electric Ind Co Ltd | プラズマ処理装置及び方法 |
KR100585578B1 (ko) | 2003-09-30 | 2006-06-07 | 닛뽕빅터 가부시키가이샤 | 마그네트론 스퍼터링 장치 |
Also Published As
Publication number | Publication date |
---|---|
KR20110107757A (ko) | 2011-10-04 |
JP5461264B2 (ja) | 2014-04-02 |
KR101290915B1 (ko) | 2013-07-29 |
TWI425108B (zh) | 2014-02-01 |
KR20130006726A (ko) | 2013-01-17 |
CN103103489A (zh) | 2013-05-15 |
CN102199754A (zh) | 2011-09-28 |
JP2011202217A (ja) | 2011-10-13 |
CN103103489B (zh) | 2015-07-22 |
TW201202461A (en) | 2012-01-16 |
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