KR101264991B1 - 마그네트론 스퍼터링 장치 및 스퍼터링 방법 - Google Patents

마그네트론 스퍼터링 장치 및 스퍼터링 방법 Download PDF

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Publication number
KR101264991B1
KR101264991B1 KR1020110026222A KR20110026222A KR101264991B1 KR 101264991 B1 KR101264991 B1 KR 101264991B1 KR 1020110026222 A KR1020110026222 A KR 1020110026222A KR 20110026222 A KR20110026222 A KR 20110026222A KR 101264991 B1 KR101264991 B1 KR 101264991B1
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South Korea
Prior art keywords
magnet
yoke
cathode
magnetron sputtering
magnet unit
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KR1020110026222A
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English (en)
Korean (ko)
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KR20110107757A (ko
Inventor
마사오 사사끼
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캐논 아네르바 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020110026222A 2010-03-25 2011-03-24 마그네트론 스퍼터링 장치 및 스퍼터링 방법 Active KR101264991B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-069394 2010-03-25
JP2010069394A JP5461264B2 (ja) 2010-03-25 2010-03-25 マグネトロンスパッタリング装置、及び、スパッタリング方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020130000245A Division KR101290915B1 (ko) 2010-03-25 2013-01-02 마그네트론 스퍼터링 장치

Publications (2)

Publication Number Publication Date
KR20110107757A KR20110107757A (ko) 2011-10-04
KR101264991B1 true KR101264991B1 (ko) 2013-05-15

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KR1020110026222A Active KR101264991B1 (ko) 2010-03-25 2011-03-24 마그네트론 스퍼터링 장치 및 스퍼터링 방법
KR1020130000245A Active KR101290915B1 (ko) 2010-03-25 2013-01-02 마그네트론 스퍼터링 장치

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KR1020130000245A Active KR101290915B1 (ko) 2010-03-25 2013-01-02 마그네트론 스퍼터링 장치

Country Status (4)

Country Link
JP (1) JP5461264B2 (https=)
KR (2) KR101264991B1 (https=)
CN (2) CN103103489B (https=)
TW (1) TWI425108B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014010148A1 (ja) * 2012-07-11 2014-01-16 キヤノンアネルバ株式会社 スパッタリング装置および磁石ユニット
CN109881166B (zh) * 2016-03-30 2021-04-20 京浜乐梦金属科技株式会社 溅射阴极、溅射装置和成膜体的制造方法
CN108172396B (zh) * 2016-12-07 2021-11-16 北京北方华创微电子装备有限公司 磁性薄膜沉积腔室及薄膜沉积设备
JP6580113B2 (ja) * 2017-12-05 2019-09-25 キヤノントッキ株式会社 スパッタ装置及びその制御方法
KR102420329B1 (ko) * 2018-02-13 2022-07-14 한국알박(주) 마그네트론 스퍼터링 장치의 자석 집합체
CN108559964A (zh) * 2018-07-25 2018-09-21 衡阳舜达精工科技有限公司 一种磁控溅射阴极磁场布置结构及用于制备纳米碳薄膜的方法
WO2020066247A1 (ja) * 2018-09-27 2020-04-02 株式会社アルバック マグネトロンスパッタリング装置用の磁石ユニット
CN114761610B (zh) * 2019-12-03 2023-10-03 日东电工株式会社 磁控溅射成膜装置
JP7555248B2 (ja) * 2019-12-03 2024-09-24 日東電工株式会社 マグネトロンスパッタリング成膜装置
CN113667951B (zh) * 2021-08-23 2023-03-21 杭州朗为科技有限公司 一种端头绝缘磁场可调的旋转阴极

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100337065B1 (ko) 1999-11-12 2002-05-16 니시히라 순지 스퍼터링 장치의 마그네트론 캐소드
JP2004124171A (ja) 2002-10-02 2004-04-22 Matsushita Electric Ind Co Ltd プラズマ処理装置及び方法
KR100585578B1 (ko) 2003-09-30 2006-06-07 닛뽕빅터 가부시키가이샤 마그네트론 스퍼터링 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0462909A (ja) * 1990-06-30 1992-02-27 Mitsubishi Kasei Corp 磁場発生用構造体における磁石の固定方法
JPH0525625A (ja) * 1991-02-17 1993-02-02 Ulvac Japan Ltd マグネトロンスパツタカソード
JPH06136528A (ja) * 1992-10-23 1994-05-17 Sumitomo Metal Mining Co Ltd マグネトロンスパッタ装置
DE19836125C2 (de) * 1998-08-10 2001-12-06 Leybold Systems Gmbh Zerstäubungsvorrichtung mit einer Kathode mit Permanentmagnetanordnung
JP3649933B2 (ja) * 1999-03-01 2005-05-18 シャープ株式会社 マグネトロンスパッタ装置
KR100345924B1 (ko) * 2000-01-24 2002-07-27 한전건 평판 마그네트론 스퍼터링 장치
KR101243068B1 (ko) * 2005-02-02 2013-03-13 히타치 긴조쿠 가부시키가이샤 마그네트론 스퍼터링용 자기 회로 장치 및 그 제조 방법
CN101126152B (zh) * 2006-08-18 2010-04-21 深圳豪威真空光电子股份有限公司 柱状磁控溅射器
JP2008121077A (ja) * 2006-11-14 2008-05-29 Hitachi Metals Ltd マグネトロンスパッタリング用磁気回路
CN101280420B (zh) * 2008-05-28 2010-09-29 东北大学 一种具有磁场增强和调节功能的磁控溅射靶

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100337065B1 (ko) 1999-11-12 2002-05-16 니시히라 순지 스퍼터링 장치의 마그네트론 캐소드
JP2004124171A (ja) 2002-10-02 2004-04-22 Matsushita Electric Ind Co Ltd プラズマ処理装置及び方法
KR100585578B1 (ko) 2003-09-30 2006-06-07 닛뽕빅터 가부시키가이샤 마그네트론 스퍼터링 장치

Also Published As

Publication number Publication date
CN103103489A (zh) 2013-05-15
CN102199754A (zh) 2011-09-28
KR101290915B1 (ko) 2013-07-29
TW201202461A (en) 2012-01-16
KR20110107757A (ko) 2011-10-04
KR20130006726A (ko) 2013-01-17
JP2011202217A (ja) 2011-10-13
CN103103489B (zh) 2015-07-22
JP5461264B2 (ja) 2014-04-02
TWI425108B (zh) 2014-02-01

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